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| CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 25 Volts APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. CHM65A3PAPT CURRENT 38 Ampere FEATURE * Small package. (TO-252A) * Super high dense cell design for extremely low RDS(ON). * High power and current handing capability. .280 (7.10) .238 (6.05) .220 (5.59) .195 (4.95) TO-252A .094 (2.40) .087 (2.20) .035 (0.89) .018 (0.45) * N-Channel Enhancement (1) (3) (2) .417 (10.6) .346 (8.80) CONSTRUCTION .261 (6.63) .213 (5.40) .035 (0.90) .025 (0.64) .102 (2.59) .078 (1.98) 1 Gate .024 (0.61) .016 (0.40) CIRCUIT (1) G D (3) 2 Source 3 Drain( Heat Sink ) S (2) Dimensions in inches and (millimeters) TO-252A Absolute Maximum Ratings Symbol Parameter TA = 25C unless otherwise noted CHM65A3PAPT Units VDSS VGSS Drain-Source Voltage Gate-Source Voltage Maximum Drain Current - Continuous 25 V V 20 60 ID - Pulsed PD TJ TSTG (Note 3) A 200 56 -55 to 150 -55 to 150 W C C Maximum Power Dissipation at Tc = 25 C Operating Temperature Range Storage Temperature Range Note : 1. Surface Mounted on FR4 Board , t <=10sec 2. Pulse Test , Pulse width <= 300us , Duty Cycle <= 2% 3. Repetitive Rating , Pulse width linited by maximum junction temperature 4. Guaranteed by design , not subject to production trsting Thermal characteristics RJA Thermal Resistance, Junction-to-Ambient (Note 1) 50 C/W 2007-06 ELECTRICAL CHARACTERISTIC ( CHM65A3PAPT ) Electrical Characteristics T Symbol Parameter A = 25C unless otherwise noted Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS IDSS I GSSF I GSSR Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Body Leakage VGS = 0 V, ID = 250 A VDS = 25 V, VGS = 0 V VGS = 20V,VDS = 0 V VGS = -20V, VDS = 0 V 25 1 +100 -100 V A nA nA ON CHARACTERISTICS (Note 2) VGS(th) RDS(ON) Gate Threshold Voltage Static Drain-Source On-Resistance VDS = VGS, ID = 250 A VGS=10V, ID=38A VGS=4.5V, ID=24A 1 10 15 3 13 V m 20 Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 15V, VGS = 0V, f = 1.0 MHz 935 220 110 pF SWITCHING CHARACTERISTICS (Note 4) Qg Qgs Q gd ton tr toff tf Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Time Rise Time Turn-Off Time Fall Time VDS=15V, ID=38A VGS=10V V DD= 15V ID =38A , VGS = 4.5 V RGEN= 16 16 3.0 3.0 25 8 55 20 25 nC 50 16 110 40 nS DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS VSD Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage IS = 38A , VGS = 0 V 38 1.3 A V RATING CHARACTERISTIC CURVES ( CHM65A3PAPT ) Typical Electrical Characteristics Figure 1. Output Characteristics 30 50 Figure 2. Transfer Characteristics 25 40 I D , DRAIN CURRENT (A) 20 I D , DRAIN CURRENT (A) V G S =1 0 , 9 , 5 V 30 15 VG S =4 . 0 V 15 20 J=125C T 10 TJ=25C TJ=-55C 5 VG S =3 . 0 V 0 3.0 2.0 1.0 V DS , DRAIN-TO-SOURCE VOLTAGE (V) 4.0 0 0 1.0 2.0 0 3.0 4.0 VGS , GATE-TO-SOURCE VOLTAGE (V) Figure 3. Gate Charge 10 VDS=15V ID=38A 2.2 Figure 4. On-Resistance Variation with Temperature VGS=10V ID=38A 1.9 VGS , GATE TO SOURCE VOLTAGE (V) DRAIN-SOURCE ON-RESISTANCE 8 6 R DS(on) , NO RMALIZED 1.6 1.3 4 1.0 2 0.7 0 0 4 8 Qg , TOTAL GATE CHARGE (nC) 12 16 0.4 -100 -50 0 50 100 TJ , JUNCTION T EMPERATURE (C) 150 200 Figure 5. Gate Threshold Variation with Temperature 1.3 1.2 VDS=VGS ID=250uA Vth , NORMALIZED GATE-SOURCE THRESHOLD VOLTAGE 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 TJ , JUNCTION T EMPERATURE (C) 125 150 |
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