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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC5803 DESCRIPTION *High Breakdown Voltage: VCBO= 1500V (Min) *High Switching Speed *Wide Area of Safe Operation APPLICATIONS *Designed for high voltage color display horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage w w scs .i w VALUE UNIT 1500 V 800 V 6 V 12 A 24 A 70 W .cn mi e IC Collector Current- Continuous ICM Collector Current- Peak PC Collector Power Dissipation @ TC=25 TJ Junction Temperature 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC5803 TYP. MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= 8A; IB= 2A B 3.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 8A; IB= 2A B 1.5 V ICES Collector Cutoff Current VCE= 1400V; VBE= 0 1.0 mA ICBO Collector Cutoff Current VCB= 800V; IE= 0 10 A IEBO Emitter Cutoff Current VEB= 4V; IC= 0 hFE-1 DC Current Gain IC= 1A; VCE= 5V hFE-2 DC Current Gain Switching Times tstg Storage Time tf Fall Time w w. w IC= 8A; VCE= 5V .cn mi cse is 15 5.5 1.0 mA 40 8.5 4.0 s IC= 7A, IB1= 1.4A; IB2= -2.8A; VCC= 200V; RL= 28.6 0.3 s isc Websitewww.iscsemi.cn 2 |
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