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| Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 1N6263 1N5711 400 mWatt Small Signal Schottky Diode 60 to 70 Volts DO-35 Features * * * High Reverse Breakdown Voltage Low Forward Voltage Drop For General Purpose Application Maximum Ratings * * * Operating Temperature: -55C to +150C Storage Temperature: -55C to +150C Maximum Thermal Resistance; 300C/W Junction To Ambient Electrical Characteristics @ 25C Unless Otherwise Specified Peak Reverse Voltage 1N6263 1N5711 1() * +,- ' ;<< ;4! Power Dissipation Junction Temperature +$ ,1' 1 D VRRM 60V 70V <- !- 400mW 125C => A Cathode Mark B - PTOT TJ Infinite Heat sink '@ 1'> A1 ) D Measured at 1.0MHz, VR=0V IF=5mA Reverse Recovery Trr VR = 6V 1.0nS Time RL=100 Note: Valid provided that leads at a distance of 4mm from case are kept ambient temperature. CJ 2pF Maximum Instantaneous Forward Voltage Maximum DC Reverse Current At Rated DC Blocking Voltage Typical Junction Capacitance VF 0.41V 1.0V IFM = 1.0mA; IFM = 15mA VR=50Volts TJ = 25C C DIMENSIONS INCHES MIN ------1.000 MM MIN ------25.40 IR 200nA DIM A B C D MAX .166 .079 .020 --- MAX 4.2 2.00 .52 --- NOTE www.cnelectr .com 1N6263 1N5711 Fig.1 Typical variation of fwd. current vs forward. voltage for primary conduction through the Schottky barrier mA Fig.2 Typical forward conduction curve of combination Schottky barrier and PN junction guard ring mA IF IF VF Fig.3 Typical variation of reverse current at various temperatures mA VF Fig.4 Typical capacitance curve as a function of reverse voltage PF TJ=25 C IR CJ VR VR www.cnelectr .com |
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