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Diode Modules
Preliminary Data Sheet
PSKD 172
IFRMS IFAVM VRRM
= 2x 300 A = 2x 190 A = 800-1800 V
VRSM V 900 1300 1500 1700 1900
VRRM V 800 1200 1400 1600 1800
Type
3 1 2 1
2
3
PSKD 172/08 PSKD 172/12 PSKD 172/14 PSKD 172/16 PSKD 172/18
Symbol IFRMS IFAVM IFSM
Test Conditions TVJ = TVJM TC = 100C; 180 sine TVJ = 45C; VR = 0 TVJ = TVJM VR = 0 TVJ = 45C VR = 0 TVJ = TVJM VR = 0 t t t t t t t t = = = = = = = = 10 ms (50 8.3 ms (60 10 ms (50 8.3 ms (60 10 ms (50 8.3 ms (60 10 ms (50 8.3 ms (60 Hz), Hz), Hz), Hz), Hz), Hz), Hz), Hz), sine sine sine sine sine sine sine sine
Maximum Ratings 300 A 190 A 6600 7290 5600 6200 218 221 157 160 000 000 000 000 A A A A A 2s A 2s A 2s A 2s C C C V~ V~
Features International standard package Direct copper bonded Al2O3 -ceramic base plate Planar passivated chips Isolation voltage 3600 V~ UL registered, E 148688

i2dt
TVJ TVJM Tstg VISOL Md Weight Symbol IR VF VT0 rT QS IRM RthJC RthJK dS dA a 50/60 Hz, RMS IISOL 1 mA t = 1 min t=1s
-40...+150 150 -40...+125 3000 3600
Applications Supplies for DC power equipment DC supply for PWM inverter Field supply for DC motors Battery DC power supplies

Mounting torque (M6) Terminal connection torque (M6) Typical including screws Test Conditions TVJ = TVJM; VR = VRRM IF = 300 A; TVJ = 25C For power-loss calculations only TVJ = TVJM TVJ = 125C; IF = 300 A, -di/dt = 50 A/s per per per per diode; DC current module diode; DC current module
2.25-2.75/20-25 Nm/lb.in. 4.5-5.5/40-48 Nm/lb.in. 120 g Characteristic Values 20 mA 1.15 0.8 0.8 550 235 0.21 0.105 0.31 0.155 12.7 9.6 50 V V m C A K/W K/W K/W K/W mm mm m/s 2
Advantages Space and weight savings Simple mounting Improved temperature and power cycling Reduced protection circuits

Dimensions in mm (1 mm = 0.0394")
other values see Fig. 6/7
Creepage distance on surface Strike distance through air Maximum allowable acceleration
Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated.
2003 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
Fig. 1 Surge overload current IFSM: Crest value, t: duration
Fig. 2 i2dt versus time (1-10 ms)
Fig. 2a Maximum forward current at case temperature Fig. 3 Power dissipation versus forward current and ambient temperature (per diode)
Fig. 4 Single phase rectifier bridge: Power dissipation versus direct output current and ambient temperature R = resistive load L = inductive load
Circuit B2 2 x PSKD 172
2003 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
Fig. 5 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature
Circuit B6 3 x PSKD 172
Fig. 6 Transient thermal impedance junction to case (per diode) RthJC for various conduction angles d: d DC 180 120 60 30 RthJC (K/W) 0.210 0.223 0.233 0.260 0.295
Constants for ZthJC calculation: i 1 2 3 Rthi (K/W) 0.0087 0.0163 0.185 ti (s) 0.001 0.065 0.4
Fig. 7 Transient thermal impedance junction to heatsink (per diode) RthJK for various conduction angles d: d DC 180 120 60 30 RthJK (K/W) 0.31 0.323 0.333 0.360 0.395
Constants for ZthJK calculation: i 1 2 3 4 Rthi (K/W) 0.0087 0.0163 0.185 0.1 ti (s) 0.001 0.065 0.4 1.29
POWERSEM GmbH, Walpersdorfer Str. 53 2003 POWERSEM reserves the right to change limits, test conditions and dimensions D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20

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