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| Photodiode Preliminary Wavelength Blue - Green Type Integrated filter 11.04.2007 Technology GaP EPD-470-5-0.5 rev. 04/07 Case 5 mm plastic lens Description 9,15 1 Anode 5,75 - 0,3 0,8 - 0,4 Selective photodiode chip in standard 5 mm package. Narrow bandwidth and high spectral sensitivity in the range of 400 - 560 nm. Housing without standoff leads. Note: Special packages with standoff available on request 2,54 Applications Optical communications, safety equipment, automation, analytics, fluorescence detection 1,5 36,5 1,0 0,6 - 0,2 O5 Miscellaneous Parameters Tamb = 25 unless otherwise specified C, Parameter Active area Temperature coefficient of ID Operating temperature range Storage temperature range Acceptance angle at 50% S Test onditions Symbol A TC(ID) Tamb Tstg Value 0.17 5 -40 to +85 -40 to +100 20 Unit mm %/K C C deg. Optical and Electrical Characteristics Tamb = 25 unless otherwise specified C, Parameter Breakdown voltage1) Dark current Peak sensitivity wavelength Responsivity at 470 nm Sensitivity range at 1% Shunt resistance Noise equivalent power Specific detectivity Junction capacitance Switching time (RL = 50 ) 1) Test conditions IR = 10 A VR = 5 V VR = 0 V VR = 0 V VR = 0 V VR = 0 V VR = 10 mV = 470 nm = 470 nm VR = 0 V VR = 5 V VR = 0 V Ev = 1000 lx Symbol VR ID p S min, max 0.5 RSH NEP D* CJ tr , tf IPh Min Typ 10 5 Max Unit V 30 480 pA nm A/W 460 470 0.3 385 100 70 100 4.4x10 120 200 0.2 -15 12 565 nm nm G Spectral bandwidth at 50% W/ Hz cm Hz W -1 9.3x10 pF ns A Photo current at Illuminant A 1) for information only Note: All measurements carried out with EPIGAP equipment Labeling Type EPD-470-5-0.5 EPIGAP Optoelektronik GmbH, D-12555 Berlin, Kopenicker Str.325 b, Haus 201 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545 Lot N RD (typ.) [G ] Quantity 1 of 2 Photodiode Preliminary 11.04.2007 EPD-470-5-0.5 rev. 04/07 Dark current vs. ambient temperature Typical Optical Responsivity (A/W) 400 0,1 300 VR = 5V VR = 1V 0,01 ID (pA) 200 100 0 20 1E-3 1E-4 350 400 450 500 Wavelength [nm] 550 600 40 60 80 100 120 Temperature T amb (C) Junction capacitance vs. reverse voltage 140 Short circuit current vs. illuminance* 10 3 120 Junction capacitance CJ (pF) 10 2 100 Short circuit current IPh (nA) 10 1 80 10 0 60 10 -1 40 10 0 1 2 3 4 5 -2 10 0 10 1 10 2 10 3 10 4 Reverse Voltage VR (V) Illuminance Ev (lx) Relative Photo-current vs. ambient temperature 1,20 12 rel. sensitivity wavelength vs. ambient temperature rel. to P at T amb = 25C 1,15 10 rel. photo-current (arb. units) 1,10 8 1,05 Wavelength shift in nm 6 1,00 4 0,95 2 0,90 0 0,85 20 30 40 50 60 70 80 90 100 20 40 60 80 100 120 Ambient temperature Tamb ( C) Ambient temperature (C) EPIGAP Optoelektronik GmbH, D-12555 Berlin, Kopenicker Str.325 b, Haus 201 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545 2 of 2 |
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