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 CHENMKO ENTERPRISE CO.,LTD
SURFACE MOUNT PNP Silicon Transistor
VOLTAGE 50 Volts
APPLICATION
* Medium Power Amplifier .
2SA1037KPT
CURRENT 150 mAmpere
FEATURE
* Surface mount package. (SOT-23) * Low saturation voltage VCE(sat)=-0.5V(max.)(IC =50mA) * Low cob. Cob=4.0pF(Typ.)
.018 (0.30) .019 (0.50)
SOT-23
.041 (1.05) .033 (0.85)
(1)
* PC= 150mW (Total),120mW per element must not be exceeded. * High saturation current capability.
.110 (2.80) .082 (2.10) .119 (3.04)
.066 (1.70)
(3)
CONSTRUCTION
* PNP Silicon Transistor
(2)
MARKING
* NT
.055 (1.40) .047 (1.20)
.103 (2.64) .086 (2.20)
.028 (0.70) .020 (0.50)
.007 (0.177)
CIRCUIT
(1) B
(3) C
.045 (1.15) .033 (0.85)
(2) E
.002 (0.05)
Dimensions in inches and (millimeters)
SOT-23
2SA1037KPT LIMITING VALUES
MAXIMUM RATINGES ( At TA = 25 C unless otherwise noted ) RATINGS Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current DC Peak Collector Current Peak Base Current Total Power Dissipation Storage Temperature Junction Temperature Operating Ambient Temperature TA 25OC; Note 1 CONDITION Open Emitter Open Base Open Collector SYMBOL VCBO VCEO VEBO IC ICM IBM PTOT TSTG TJ TAMB MIN. -55 -55 MAX. -60 -50 -6 -150 -150 -15 250 +150 +150 +150 UNITS Volts Volts Volts mAmps mAmps mAmps mW
o
C C C
o
o
Note
1. Transistor mounted on ceramic substrate 50mmX50mmx0.8t. 2. Measured at Pulse Width 300 us, Duty Cycle 2%.
2004-07
RATING CHARACTERISTIC CURVES ( 2SA1037KPT )
2SA1037KPT CHARACTERISTICS
ELECTRICAL CHARACTERISTICS ( At TA = 25oC unless otherwise noted ) PARAMETERS Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Output Collector Capacitance Transition Frequency CONDITION IC=-50uA IC=-1mA IE=-50uA IE=0; VCB=-60V IC=0; VEB=-6V VCE=-6V IC=-1mA IC=-50mA; IB=-5mA IE=ie=0; VCB=-12V; f=1MHz IE=2mA; VCE=-12V; f=100MHz SYMBOL BVCBO BVCEO BVEBO ICBO IEBO hFE VCEsat Cob fT MIN. -60 -50 -6 120 4 140 TYPE MAX. -0.1 -0.1 560 -0.5 5.0 Volts pF MHz uA UNITS Volts Volts Volts
RATING CHARACTERISTIC CURVES ( 2SA1037KPT )
2SA1037KPT Typical Electrical Characteristics
Fig.1
-50
COLLECTOR CURRENT : IC (mA)
Grounded emitter propagation characteristics
Ta=100C 25C -40C
VCE=-6V
Fig.2
-10
COLLECTOR CURRENT : IC (mA)
Grounded emitter output characteristics
Fig.3 DC current gain vs. collector current (1)
500
Ta=25C
VCE=-5V -3V -1V
-35.0
Ta=25C
-20 -10 -5 -2 -1 -0.5 -0.2 -0.1
-31.5
DC CURRENT GAIN : hFE
-8
-28.0 -24.5
-6
-21.0 -17.5
200
-4
-14.0 -10.5
100
-2
-7.0 -3.5A
50
-0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 -1.8
BASE TO EMITTER VOLTAGE : VBE (V)
0
-0.4
-0.8
-1.2
-1.6
IB=0 -2.0
-0.2 -0.5 -1
-2
-5 -10 -20
-50 -100
BASE TO EMITTER VOLTAGE : VBE (V)
COLLECTOR CURRENT : IC (mA)
Fig.4 DC current gain vs. collector current (2)
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
Fig. 5 Collector-emitter saturation voltage vs. collector current
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
Fig.6 Collector-emitter saturation voltage vs. collector current
-1
lC/lB=10
500
Ta=100C 25C
DC CURRENT GAIN : hFE
-1
VCE=-6V
Ta=25C
-0.5
-0.5
200
-40C
100
-0.2
IC/IB=50
-0.2
Ta=100C 25C -40C
-0.1
20
10
-0.1
50
-0.05 -0.2 -0.5 -1 -2 -5 -10 -20
-0.05 -0.2 -0.5 -1 -2 -5 -10 -20 -50 -100
-0.2 -0.5 -1
-2
-5 -10 -20
-50 -100
-50 -100
COLLECTOR CURRENT : IC (mA)
COLLECTOR CURRENT : IC (mA)
COLLECTOR CURRENT : IC (mA)
Fig.7 Gain bandwidth product vs. emitter current
1000
TRANSITION FREQUENCY : fT (MHz)
Ta=25C VCE=-12V
500
200
100
50 0.5
1 2 5 10
20
50
100
EMITTER CURRENT : IE (mA)


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