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| New Product SUD35N10-26P Vishay Siliconix N-Channel 100-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 100 rDS(on) () 0.026 at VGS = 10 V ID (A)a 35 Qg (Typ) 31 nC FEATURES * TrenchFET(R) Power MOSFET * 100 % UIS Tested RoHS COMPLIANT APPLICATIONS * Primary Side Switch TO-252 D Drain Connected to Tab G G D S Top View Ordering Information: SUD35N10-26P-E3 (Lead (Pb)-free) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 C Continuous Drain Current (TJ = 175 C) TC = 70 C TA = 25 C TA = 70 C Pulsed Drain Current Continuous Source-Drain Diode Current Avalanche Current Pulse Single Pulse Avalanche Energy TC = 25 C TA = 25 C L = 0.1 mH TC = 25 C Maximum Power Dissipation TC = 70 C TA = 25 C TA = 70 C Operating Junction and Storage Temperature Range TJ, Tstg PD IDM IS IAS EAS ID Symbol VDS VGS Limit 100 20 35 32 12b, c 10b, c 40 50e 6.9b, c 33 55 83 58 8.3b, c 5.8b, c - 55 to 175 C W mJ A Unit V THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient Maximum Junction-to-Case b, d Symbol t 10 s Steady State RthJA RthJC Typical 15 1.5 Maximum 18 1.8 Unit C/W Notes: a. Based on TC = 25 C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under Steady State conditions is 50 C/W. e. Calculated based on maximum junction temperature. Package limitation current is 50 A. Document Number: 69796 S-80184-Rev. A, 04-Feb-08 www.vishay.com 1 New Product SUD35N10-26P Vishay Siliconix SPECIFICATIONS TJ = 25 C, unless otherwise noted Parameter Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Fall Time Reverse Recovery Rise Time Currenta IS ISM VSD trr Qrr ta tb IF = 10 A, di/dt = 100 A/s, TJ = 25 C IS = 10 A 0.8 50 100 38 12 TC = 25 C 50 40 1.2 75 150 A V ns nC ns Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf VDD = 50 V, RL = 5 ID 10 A, VGEN = 10 V, Rg = 1 f = 1 MHz VDS = 50 V, VGS = 10 V, ID = 12 A VDS = 12 V, VGS = 0 V, f = 1 MHz 2000 180 60 31 10 9 1.5 10 10 15 10 15 15 25 15 ns 47 nC pF Resistancea Forward Transconductancea VDS VDS/TJ VGS(th)/TJ VGS(th) IGSS IDSS ID(on) rDS(on) gfs VGS = 0 V, ID = 250 A ID = 250 A VDS = VGS, ID = 250 A VDS = 0 V, VGS = 20 V VDS = 100 V, VGS = 0 V VDS = 100 V, VGS = 0 V, TJ = 55 C VDS 5 V, VGS = 10 V VGS = 10 V, ID = 12 A VDS = 15 V, ID = 12 A 40 0.021 25 0.026 2.5 100 165 - 11 4.4 100 1 10 V mV/C V nA A A S Symbol Test Conditions Min. Typ. Max. Unit Notes: a. Pulse test; pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 69796 S-80184-Rev. A, 04-Feb-08 New Product SUD35N10-26P Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 40 VGS = 10 thru 7 V 30 I D - Drain Current (A) I D - Drain Current (A) VGS = 6 V 20 TC = 25 C 6 10 TC = - 55 C 8 4 TC = 125 C 2 10 VGS = 4 V 0 0.0 VGS = 5 V 0 0.5 1.0 1.5 2.0 2.5 3.0 0 1 2 3 4 5 6 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics 0.023 2500 Transfer Characteristics r DS(on) - On-Resistance () 2000 0.022 VGS = 10 V C - Capacitance (pF) Ciss 1500 1000 0.021 500 Crss 0.020 0 10 20 ID - Drain Current (A) 30 40 0 0 Coss 20 40 60 80 100 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current 10 ID = 12 A VGS - Gate-to-Source Voltage (V) 8 r DS(on) - On-Resistance VDS = 50 V 2.2 2.0 1.8 1.6 (Normalized) 1.4 1.2 1.0 0.8 0.6 0 0 5 10 15 20 25 30 35 0.4 - 50 ID = 12 A Capacitance VGS = 10 V 6 VDS = 80 V 4 2 - 25 0 25 50 75 100 125 150 175 Qg - Total Gate Charge (nC) TJ - Junction Temperature (C) Gate Charge Document Number: 69796 S-80184-Rev. A, 04-Feb-08 On-Resistance vs. Junction Temperature www.vishay.com 3 New Product SUD35N10-26P Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 100 0.08 ID = 12 A r DS(on) - On-Resistance () I S - Source Current (A) 0.06 TA = 125 C 0.04 TA = 25 C TJ = 150 C 10 TJ = 25 C 0.02 1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 4 5 6 7 8 9 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage 4.5 200 rDS(on) vs. VGS vs. Temperature 4.0 ID = 250 A 150 Power (W) 3.5 V GS(th) (V) 3.0 100 2.5 50 2.0 1.5 - 50 - 25 0 25 50 75 100 125 150 175 0 0.001 0.01 0.1 1 Time (s) 10 100 1000 TJ - Temperature (C) Threshold Voltage 100 Limited by rDS(on)* Single Pulse Power, Junction-to-Ambient 100 s 10 I D - Drain Current (A) 1 ms 1 10 ms 100 ms 1s 0.1 TA = 25 C Single Pulse 0.01 0.1 1 10 BVDSS Limited 10 s DC 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which rDS(on) is specified Safe Operating Area www.vishay.com 4 Document Number: 69796 S-80184-Rev. A, 04-Feb-08 New Product SUD35N10-26P Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 40 80 30 Power Dissipation (W) I D - Drain Current (A) 60 20 40 10 20 0 0 25 50 75 100 125 150 0 25 50 75 100 125 150 TC - Case Temperature (C) TC - Case Temperature (C) Current Derating* Power Derating * The power dissipation PD is based on TJ(max) = 150 C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 69796 S-80184-Rev. A, 04-Feb-08 www.vishay.com 5 New Product SUD35N10-26P Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 PDM Notes: 0.05 t1 t2 1. Duty Cycle, D = t1 t2 0.02 2. Per Unit Base = RthJA = 40 C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) 10 4. Surface Mounted 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?69796. www.vishay.com 6 Document Number: 69796 S-80184-Rev. A, 04-Feb-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 |
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