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PMGD780SN
Dual N-channel TrenchMOS standard level FET
Rev. 02 -- 19 April 2010 Product data sheet
1. Product profile
1.1 General description
Dual N-channel enhancement mode field-effect transistor in a small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using TrenchMOS technology.
1.2 Features and benefits
Surface-mounted package Standard level threshold voltage Low on-state resistance Footprint 40 % smaller than SOT23 Fast switching Dual device
1.3 Applications
Driver circuits Switching in portable appliances
1.4 Quick reference data
VDS 60 V Ptot 0.41 W ID 0.49 A RDSon 920 m
2. Pinning information
Table 1. Pin 1 2 3 4 5 6 Pinning - SOT363 (SC-88), simplified outline and symbol Description source1 (S1) gate1 (G1) drain2 (D2) source2 (S2) gate2 (G2) drain1 (D1)
1 2 3
S1 G1 S2 G2
Simplified outline
6 5 4
Graphic symbol
D1
D2
SOT363 (SC-88)
msd901
NXP Semiconductors
PMGD780SN
Dual N-channel TrenchMOS standard level FET
3. Ordering information
Table 2. Ordering information Package Name PMGD780SN SC-88 Description plastic surface-mounted package; 6 leads Version SOT363 Type number
4. Limiting values
Table 3. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VDGR VGS ID IDM Ptot Tstg Tj IS ISM
[1]
Conditions 25 C Tj 150 C 25 C Tj 150 C; RGS = 20 k Tsp = 25 C; VGS = 10 V; Figure 2 and 3 Tsp = 100 C; VGS = 10 V; Figure 2 Tsp = 25 C; pulsed; tp 10 s; Figure 3 Tsp = 25 C; Figure 1
[1] [1] [1]
Min -55 -55
Max 60 60 20 0.49 0.31 0.99 0.41 +150 +150 0.34 0.69
Unit V V V A A A W C C A A
drain-source voltage drain-gate voltage gate-source voltage drain current peak drain current total power dissipation storage temperature junction temperature source current peak source current
Single device conducting.
Source-drain diode Tsp = 25 C Tsp = 25 C; pulsed; tp 10 s
[1] [1]
-
PMGD780SN_2
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(c) NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 -- 19 April 2010
2 of 14
NXP Semiconductors
PMGD780SN
Dual N-channel TrenchMOS standard level FET
120 Pder (%) 80
03aa17
120 Ider (%) 80
03aa25
40
40
0 0 50 100 150 Tsp (C) 200
0 0 50 100 150 Tsp (C) 200
P tot Pder = ---------------------- x 100% P
tot ( 25 C )
ID I der = ------------------ x 100% I
D ( 25 C )
Fig 1.
Normalized total power dissipation as a function of solder point temperature
Fig 2.
Normalized continuous drain current as a function of solder point temperature
10 ID (A) 1
03an22
Limit RDSon = VDS / ID
tp = 10 s
100 s 10-1 1 ms DC 10 ms 100 ms
10-2
10-3 10-1
1
10 VDS (V)
102
Tsp = 25 C; IDM is single pulse; VGS = 10 V
Fig 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
PMGD780SN_2
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(c) NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 -- 19 April 2010
3 of 14
NXP Semiconductors
PMGD780SN
Dual N-channel TrenchMOS standard level FET
5. Thermal characteristics
Table 4. Rth(j-sp) Thermal characteristics Conditions Figure 4 Min Typ Max 300 Unit K/W thermal resistance from junction to solder point Symbol Parameter
103 Zth(j-sp) (K/W) = 0.5 102 0.2 0.1 0.05 0.02 10 single pulse P
03an28
=
tp T
tp T 1 10-4 10-3 10-2 10-1 1
t
tp (s)
10
Fig 4.
Transient thermal impedance from junction to solder point as a function of pulse duration
PMGD780SN_2
All information provided in this document is subject to legal disclaimers.
(c) NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 -- 19 April 2010
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NXP Semiconductors
PMGD780SN
Dual N-channel TrenchMOS standard level FET
6. Characteristics
Table 5. Characteristics Tj = 25 C unless otherwise specified. Symbol Parameter Static characteristics V(BR)DSS drain-source breakdown voltage ID = 250 A; VGS = 0 V Tj = 25 C Tj = -55 C VGS(th) gate-source threshold voltage ID = 0.25 mA; VDS = VGS; Figure 9 Tj = 25 C Tj = 150 C Tj = -55 C IDSS drain leakage current VDS = 60 V; VGS = 0 V Tj = 25 C Tj = 150 C IGSS RDSon gate leakage current drain-source on-state resistance VGS = 20 V; VDS = 0 V VGS = 10 V; ID = 0.3 A; Figure 7 and 8 Tj = 25 C Tj = 150 C VGS = 4.5 V; ID = 0.075 A; Figure 7 and 8 Dynamic characteristics QG(tot) QGS QGD Ciss Coss Crss td(on) tr td(off) tf VSD total gate charge gate-source charge gate-drain charge input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time source-drain voltage IS = 0.3 A; VGS = 0 V; Figure 12 VDD = 30 V; RL = 30 ; VGS = 10 V; RG = 6 VGS = 0 V; VDS = 30 V; f = 1 MHz; Figure 11 ID = 1 A; VDD = 30 V; VGS = 10 V; Figure 13 1.05 0.2 0.22 23 5 3.5 2 4 5 2.2 0.83 1.2 nC nC nC pF pF pF ns ns ns ns V 780 920 m 1445 1700 m 1100 1400 m 0.05 10 1 100 100 A A nA 1 0.6 - 2 - - 2.5 - 3.5 V V V 60 55 V V Conditions Min Typ Max Unit
Source-drain diode
PMGD780SN_2
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(c) NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 -- 19 April 2010
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NXP Semiconductors
PMGD780SN
Dual N-channel TrenchMOS standard level FET
2 ID (A) 1.5
03an88
10 6
1 ID (A) 0.8
03an90
5 0.6 1 4.5 0.4 4 0.5 3.5 VGS (V) = 3 0 0 1 2 VDS (V) 3 0 0 1 2 3 4 VGS (V) 5 0.2 Tj = 150 C 25 C
Tj = 25 C
Tj = 25 C and 150 C; VDS > ID x RDSon
Fig 5.
Output characteristics: drain current as a function of drain-source voltage; typical values
03an89
Fig 6.
Transfer characteristics: drain current as a function of gate-source voltage; typical values
3 VGS (V) = 3.5 RDSon () 2
2.4 a
03aa28
4 4.5
1.8
1.2
5 1 6 10
0.6
0 0 0.2 0.4 0.6 0.8 ID (A) 1
0 -60
0
60
120 Tj (C)
180
Tj = 25 C
RDSon a = ---------------------------R DSon ( 25 C ) Fig 8. Normalized drain-source on-state resistance as a function of junction temperature
Fig 7.
Drain-source on-state resistance as a function of drain current; typical values
PMGD780SN_2
All information provided in this document is subject to legal disclaimers.
(c) NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 -- 19 April 2010
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NXP Semiconductors
PMGD780SN
Dual N-channel TrenchMOS standard level FET
2.4 VGS(th) (V) 1.8
03aa34
10-3 ID (A) 10-4
03an32
typ
10-5
1.2 min
10-6
min
typ
0.6
1E-7
0 -60
1E-8
0 60 120 Tj (C) 180
0
0.5
1
1.5
2
VGS (V)
2.5
ID = 0.25 mA; VDS = VGS
Tj = 25 C; VDS = 5 V
Fig 9.
Gate-source threshold voltage as a function of junction temperature
102
Fig 10. Sub-threshold drain current as a function of gate-source voltage
03an92
C (pF) Ciss
10 Coss Crss
1 10-1
1
10
VDS (V)
102
VGS = 0 V; f = 1 MHz
Fig 11. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values
PMGD780SN_2
All information provided in this document is subject to legal disclaimers.
(c) NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 -- 19 April 2010
7 of 14
NXP Semiconductors
PMGD780SN
Dual N-channel TrenchMOS standard level FET
1 IS (A) 0.8 VGS = 0 V
03an91
10 VGS (V) 8 ID = 1 A Tj = 25 C VDS = 30 V
03an93
0.6
6
0.4 150 C 0.2 Tj = 25 C
4
2
0 0 0.3 0.6 0.9 VSD (V) 1.2
0 0 0.3 0.6 0.9 QG (nC) 1.2
Tj = 25 C and 150 C; VGS = 0 V
ID = 1 A; VDD = 30 V
Fig 12. Source current as a function of source-drain voltage; typical values
Fig 13. Gate-source voltage as a function of gate charge; typical values
PMGD780SN_2
All information provided in this document is subject to legal disclaimers.
(c) NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 -- 19 April 2010
8 of 14
NXP Semiconductors
PMGD780SN
Dual N-channel TrenchMOS standard level FET
7. Package outline
Plastic surface-mounted package; 6 leads SOT363
D
B
E
A
X
y
HE
vMA
6
5
4
Q
pin 1 index
A
A1
1
e1 e
2
bp
3
wM B detail X Lp
c
0
1 scale
2 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.8 A1 max 0.1 bp 0.30 0.20 c 0.25 0.10 D 2.2 1.8 E 1.35 1.15 e 1.3 e1 0.65 HE 2.2 2.0 Lp 0.45 0.15 Q 0.25 0.15 v 0.2 w 0.2 y 0.1
OUTLINE VERSION SOT363
REFERENCES IEC JEDEC JEITA SC-88
EUROPEAN PROJECTION
ISSUE DATE 04-11-08 06-03-16
Fig 14. Package outline SOT363 (SC-88)
PMGD780SN_2 All information provided in this document is subject to legal disclaimers. (c) NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 -- 19 April 2010
9 of 14
NXP Semiconductors
PMGD780SN
Dual N-channel TrenchMOS standard level FET
8. Soldering
2.65
solder lands 2.35 1.5 0.6 0.5 (4x) (4x) 0.4 (2x) solder resist solder paste 0.5 (4x) 0.6 (4x) 1.8 0.6 (2x) occupied area Dimensions in mm
sot363_fr
Fig 15. Reflow soldering footprint SOT363 (SC-88)
PMGD780SN_2
All information provided in this document is subject to legal disclaimers.
(c) NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 -- 19 April 2010
10 of 14
NXP Semiconductors
PMGD780SN
Dual N-channel TrenchMOS standard level FET
9. Revision history
Table 6. Revision history Release date 20100419 Data sheet status Product data sheet Change notice Supersedes PMGD780SN_1 Document ID PMGD780SN_2 Modifications:
* * * *
The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. Legal texts have been adapted to the new company name where appropriate. Table 5 "Characteristics": added VGS(th) maximum value at condition Tj = 25 C Section 10 "Legal information": updated Product data -
PMGD780SN_1
20040211
PMGD780SN_2
All information provided in this document is subject to legal disclaimers.
(c) NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 -- 19 April 2010
11 of 14
NXP Semiconductors
PMGD780SN
Dual N-channel TrenchMOS standard level FET
10. Legal information
10.1 Data sheet status
Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet
[1] [2] [3]
Product status[3] Development Qualification Production
Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification.
Please consult the most recently issued document before initiating or completing a design. The term `short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com.
10.2 Definitions
Draft -- The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet -- A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification -- The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet.
malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications -- Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on a weakness or default in the customer application/use or the application/use of customer's third party customer(s) (hereinafter both referred to as "Application"). It is customer's sole responsibility to check whether the NXP Semiconductors product is suitable and fit for the Application planned. Customer has to do all necessary testing for the Application in order to avoid a default of the Application and the product. NXP Semiconductors does not accept any liability in this respect. Limiting values -- Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale -- NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer's general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license -- Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control -- This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data -- The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Non-automotive qualified products -- Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications.
(c) NXP B.V. 2010. All rights reserved.
10.3 Disclaimers
Limited warranty and liability -- Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors' aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. Right to make changes -- NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use -- NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or
PMGD780SN_2
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Product data sheet
Rev. 02 -- 19 April 2010
12 of 14
NXP Semiconductors
PMGD780SN
Dual N-channel TrenchMOS standard level FET
In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors' warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors' specifications such use shall be solely at customer's own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors' standard warranty and NXP Semiconductors' product specifications.
10.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS -- is a trademark of NXP B.V.
11. Contact information
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com
PMGD780SN_2
All information provided in this document is subject to legal disclaimers.
(c) NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 -- 19 April 2010
13 of 14
NXP Semiconductors
PMGD780SN
Dual N-channel TrenchMOS standard level FET
12. Contents
1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 10.1 10.2 10.3 10.4 11 12 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics . . . . . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11 Legal information. . . . . . . . . . . . . . . . . . . . . . . 12 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Contact information. . . . . . . . . . . . . . . . . . . . . 13 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'.
(c) NXP B.V. 2010.
All rights reserved.
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 19 April 2010 Document identifier: PMGD780SN_2

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