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| Shantou Huashan Electronic Devices Co.,Ltd. HFP30N06 N-Channel Enhancement Mode Field Effect Transistor General Description This Power MOSFET is produced using advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a low gate charge with superior switching performance, and rugged avalanche characteristics. This devices is well suited for synchronous DC-DC Converters and Power Management in portable and battery operated products. TO-220 1- G 2-D 3-S Features 60V, RDS (on) <0.04? @VGS = 10 V *Low gate charge *100% avalanche tested *Improved dv/dt capability *Equivalent Type:FQP30N06 Maximum Ratings Ta=25ae unless otherwise specified (c) *30A, T s t g Storage Temperature ------------------------------------------------------ - 55~175ae Tj Operating Junction Temperature -------------------------------------------------- 175ae VD S S Drain -Source Voltage ---------------------------------------------------------- 60V ID Drain Current (Continuous)(T c=25ae----------------------------------------------------------- 30A ) Drain Current (Continuous)(Tc=100ae--------------------------------------------------------- 21.2A ) IDM Drain Current Pulse ------------------------------------------------------------------------------ 120A VGSS Gate-Source Voltage -------------------------------------------------------------------------- 20V PD Maximum Power Dissipation (Tc=25ae----------------------------------------------------- 79W ) EAS Single Pulse Avalanche Energy (starting Tj = 25aeI D = IAR, VDD = 50 V) --------------------------------------------------- 430 mJ , dv/dt Reak Diode Recovery dv/dt (ISDU 30A,di/dtU 300A/us,VddU BVdss,Duty Cycle U ------------------------- 7.0V/ns 2%) Thermal Characteristics Items Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink Max Max Typ TO-220 1.9 62.5 0.5 Unit ae /W ae /W ae /W Symbol Rthj-case Rthj-amb Rth c-s Shantou Huashan Electronic Devices Co.,Ltd. HFP30N06 (c) Conditions ID =250 ,VGS=0V A VDS =60V, VGS=0V VDS =48V, VGS=0V,Tj=150ae VGS= 20V , VDS =0V VDS = VGS , ID=250 A VGS=10V, ID=15A Electrical Characteristics Ta=25ae unless otherwise specified Items Min. 60 1 10 100 2.0 4.0 0.04 1210 380 100 40 60 130 90 35 6.2 Typ. Max. Unit V A A nA V Symbol Off Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate -Body Leakage On Characteristics Gate Threshold Voltage VGS(th) RDS(on) Static Drain-Source On-Resistance Dynamic Characteristics and Switching Characteristics Ciss Input Capacitance Coss Crss Output Capacitance Reverse Transfer Capacitance Turn - On Delay Time Rise Time Turn - Off Delay Time Fall Time Total Gate Charge Gate- Source Charge Gate- Drain Charge ? pF pF pF nS nS nS nS nC nC nC VDS = 25 V, VGS = 0V, f = 1.0 MHz td(on) tr td(off) tf Qg Qgs Qgd VDD = 30 V, ID = 15Apk RG = 50 ? (Note 1,2) VDS=0.8VDSS, ID=30A, VGS = 10 V (Note 1,2) 11.1 Drain-Source Diode Characteristics and Maximun Ratings Continuous Source- Drain Diode IS Forward Current Pulsed Drain-Source Diode ISM Forward Current Source- Drain Diode Forward VSD On- Voltage Notes: 1. Pulse Test: Pulse widthU 300|I S,Duty cycle U 2% 2. Essentially independent of operating temperature 30 120 1.5 A A V IS=30A,VGS=0 Shantou Huashan Electronic Devices Co.,Ltd. HFP30N06 Typical Characteristics Fig 1. On-State Characteristics Fig 2. Transfer Characteristics Fig 3. On Resistance Variation vs. Drain Current and Gate Voltage Fig 4. On State Current vs. Allowable Case Temperature Fig 5. Capacitance Characteristics Fig 6. Gate Charge Characteristics Shantou Huashan Electronic Devices Co.,Ltd. HFP30N06 Typical Characteristics Fig 7. Breakdown Voltage Variation vs. Junction Temperature Fig 8. On-Resistance Variation vs. Junction Temperature Fig 9. Maximum Safe Operating Area Fig 10. Maximum Drain Current vs. Case Temperature Fig 11. Transient Thermal Response Curve Shantou Huashan Electronic Devices Co.,Ltd. HFP30N06 Typical Characteristics Fig. 12. Gate Charge Test Circuit & Waveforms Fig 13. Switching Time Test Circuit & Waveforms Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms Shantou Huashan Electronic Devices Co.,Ltd. HFP30N06 Typical Characteristics Fig. 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms |
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