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ECO-PACTM 2
Power MOSFET
in ECO-PAC 2
N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family
PSHM 120D/01
L4 L6 L9 P18 R18 K12 F10 NTC K13
ID25 VDSS RDSon trr
= 75 A = 100 V = 25 m < 200 ns
Preliminary Data Sheet
MOSFETs
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PD Symbol Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M Continuous Transient TC = 25C TC = 25C, pulse width limited by TJM TC = 25C TC = 25C IS IDM, di/dt 100 A/s, VDD VDSS, TJ 150C, RG = 2 TC = 25C Test Conditions Maximum Ratings 100 100 20 30 75 300 75 30 5 300 V V V V A A A mJ V/ns W
Features * HiPerFETTM technology - low RDSon - low gate charge for high frequency operation - unclamped inductive switching (UIS) capability - dv/dt ruggedness - fast intrinsic reverse diode * ECO-PAC 2 package - isolated back surface - enlarged creepage towards heatsink - application friendly pinout - low inductive current path - high reliability - solderable pins for PCB mounting * UL registered, E 148688 Applications
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 100 2.0 4 100 250 1 25 25 30 4500 1600 800 20 60 80 60 180 36 85 0.25 30 110 110 90 260 70 160 0.5 V V nA A mA m S
VDSS VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK
VGS = 0 V, ID = 250 A VDS = VGS, ID = 4 mA VGS = 20 VDC, VDS = 0 VDS = 0.8 * VDSS; TJ = 25C VGS = 0 V; TJ = 125C VGS = 10 V, ID = 0.5 ID25 Pulse test, t < 300 s, duty cycle d < 2% VDS = 10 V; ID = ID25, pulse test VGS = 0 V, VDS = 25 V, f = 1 MHz
* drives and power supplies * battery or fuel cell powered pF * automotive, industrial vehicle etc. pF pF * secondary side of mains power supplies
ns ns ns ns
VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 ID25 RG = 2 , (External)
VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 ID25
nC nC nC K/W K/W
with heatsink compound (0.42 K/m.K; 50 m)
Caution: These Devices are sensitive to electrostatic discharge. Users should observe proper ESD handling precautions.
2005 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
ECO-PACTM 2
Source-Drain Diode
Symbol IS ISM VSD t rr Test Conditions VGS = 0 V Repetitive; IF = ID25, VGS = 0 V, Pulse test, t < 300 s, duty cycle d < 2% IF = 25 A, -di/dt = 100 A/s, TJ = 25C VR = 25 V TJ = 125C 300 Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 75 300 1.75 200 A A V ns ns Dimensions in mm (1 mm = 0.0394")
Temperature Sensor NTC
Symbol R25 B25/50 Conditions T = 25C Characteristic Values min. typ. max. 4.75 5.0 3375 5.25 k K
Module
Symbol TVJ Tstg VISOL Md a IISOL 1 mA; 50/60 Hz; t = 1 s Mounting torque (M4) Max. allowable acceleration Conditions Maximum Ratings -40...+150 -40...+125 3600 1.5 - 2.0 14 - 18 50 C C V~ Nm lb.in. m/s 2
Symbol dS dA Weight
Conditions Creepage distance on surface (Pin to heatsink) Strike distance in air (Pin to heatsink)
Characteristic Values min. typ. max. 11.2 11.2 24 mm mm g
Data according to IEC 60747 refer to a single diode or transistor unless otherwise stated
2005 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
ECO-PACTM 2
200
TJ = 25C VGS = 10V 9V
150 125
150
8V
ID - Amperes
100 75 50 25 0
TJ = 125C
100
7V 6V
50
0
5V
TJ = 25C
0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0
0
1
2
3
4
5
6
7
8
9
10
VDS - Volts
VGS - Volts
Fig. 1 Output Characteristics
1,4
TJ = 25C
Fig. 2 Input Admittance
2,50 2,25
1,3
RDS(on) - Normalized
2,00 1,75 1,50 1,25 1,00 0,75
ID = 37.5A
1,2
VGS = 10V
1,1 1,0
VGS = 15V
0,9 0,8
0
20
40
60
80
100 120 140 160
0,50 -50
-25
0
25
50
75
100 125 150
ID - Amperes
TJ - Degrees C
Fig. 3 RDS(on) vs. Drain Current
80
Fig. 4 Temperature Dependence of Drain to Source Resistance
1,2
60
BV/VG(th) - Normalized
1,1 1,0 0,9 0,8 0,7 0,6 0,5 -50
VGS(th)
BVDSS
40
20
0
-50
-25
0
25
50
75
100 125 150
-25
0
25
50
75
100 125 150
TC - Degrees C
TJ - Degrees C
Fig. 5 Drain Current vs. Case Temperature
Fig. 6 Temperature Dependence of Breakdown and Threshold Voltage
2005 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
ECO-PACTM 2
10 9 8 7 6 5
GS
VDS = 50V ID = 37.5A IG = 1mA
Limited by RDS(on)
10 1
100
ID - Amperes
1m
4 3 2 1 0 0 25 50 75 100 125 150 175 200
10
1 10
1
1
10
100
Gate Charge - nCoulombs
VDS - Volts
Fig.7 Gate Charge Characteristic Curve
6000 5000
150 125
Fig.8 Forward Bias Safe Operating Area
3000 2000 1000 0
f = 1MHz VDS = 25V Coss
IS - Amperes
4000
Ciss
100 75 50
TJ = 125C
25
Crss
TJ = 25C
0
5
10
15
20
25
0
0,00
0,25
0,50
0,75
1,00
1,25
1,50
VDS - Volts
VSD - Volt
Fig.9 Capacitance Curves
Fig.10 Source Current vs. Source to Drain Voltage
D=0.5
0,1
D=0.2 D=0.1 D=0.05
0,01 D=0.02
D=0.01 Single pulse
0,001 0,00001
0,0001
0,001
0,01
0,1
1
10
Fig.11 Transient Thermal Impedance
Time - Seconds
2005 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20

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