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Freescale Semiconductor Technical Data
Document Number: MRF6V12500H Rev. 0, 9/2009
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
RF Power transistors designed for applications operating at frequencies between 965 and 1215 MHz. These devices are suitable for use in pulsed applications. * Typical Pulsed Performance: VDD = 50 Volts, IDQ = 200 mA, Pout = 500 Watts Peak (50 W Avg.), f = 1030 MHz, Pulse Width = 128 sec, Duty Cycle = 10% Power Gain -- 19.7 dB Drain Efficiency -- 62% * Capable of Handling 10:1 VSWR, @ 50 Vdc, 1030 MHz, 500 Watts Peak Power Features * Characterized with Series Equivalent Large - Signal Impedance Parameters * Internally Matched for Ease of Use * Qualified Up to a Maximum of 50 VDD Operation * Integrated ESD Protection * Greater Negative Gate - Source Voltage Range for Improved Class C Operation * RoHS Compliant * In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MRF6V12500HR3 MRF6V12500HSR3
965 - 1215 MHz, 500 W, 50 V PULSED LATERAL N - CHANNEL RF POWER MOSFETs
CASE 465 - 06, STYLE 1 NI - 780 MRF6V12500HR3
CASE 465A - 06, STYLE 1 NI - 780S MRF6V12500HSR3
Table 1. Maximum Ratings
Rating Drain - Source Voltage Gate - Source Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature Symbol VDSS VGS Tstg TC TJ Value - 0.5, +100 - 6.0, +10 - 65 to +150 150 200 Unit Vdc Vdc C C C
Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case Case Temperature 80C, 500 W Pulsed, 128 sec Pulse Width, 10% Duty Cycle Symbol ZJC Value (1,2) 0.044 Unit C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955.
(c) Freescale Semiconductor, Inc., 2009. All rights reserved.
MRF6V12500HR3 MRF6V12500HSR3 1
RF Device Data Freescale Semiconductor
Table 3. ESD Protection Characteristics
Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 2 (Minimum) B (Minimum) IV (Minimum)
Table 4. Electrical Characteristics (TA = 25C unless otherwise noted)
Characteristic Off Characteristics Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) Drain - Source Breakdown Voltage (VGS = 0 Vdc, ID = 200 mA) Zero Gate Voltage Drain Leakage Current (VDS = 50 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 90 Vdc, VGS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 1.32 mA) Gate Quiescent Voltage (VDD = 50 Vdc, ID = 200 mAdc, Measured in Functional Test) Drain - Source On - Voltage (VGS = 10 Vdc, ID = 3.26 Adc) Dynamic Characteristics (1) Reverse Transfer Capacitance (VDS = 50 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Output Capacitance (VDS = 50 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Input Capacitance (VDS = 50 Vdc, VGS = 0 Vdc 30 mV(rms)ac @ 1 MHz) Crss Coss Ciss -- -- -- 0.2 697 1391 -- -- -- pF pF pF VGS(th) VGS(Q) VDS(on) 0.9 1.7 -- 1.7 2.4 0.25 2.4 3.2 -- Vdc Vdc Vdc IGSS V(BR)DSS IDSS IDSS -- 110 -- -- -- -- -- -- 10 -- 20 200 Adc Vdc Adc Adc Symbol Min Typ Max Unit
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ = 200 mA, Pout = 500 W Peak (50 W Avg.), f = 1030 MHz, Pulsed, 128 sec Pulse Width, 10% Duty Cycle Power Gain Drain Efficiency Input Return Loss 1. Part internally matched both on input and output. Gps D IRL 18.5 58 -- 19.7 62 - 18 22 -- -9 dB % dB
MRF6V12500HR3 MRF6V12500HSR3 2 RF Device Data Freescale Semiconductor
R3 VBIAS C9 C8 C7
R1 C5 C3 Z19 Z9 Z10 Z11 Z12 Z13 Z14 C12 C13
+ C14
+ C15
VSUPPLY
Z15
Z16
Z17 C2
Z18
RF OUTPUT
RF INPUT
Z1 C1
Z2
Z3
Z4
Z5
Z6
Z7
Z8 Z21 DUT Z20
R4
R2
C6
C16
C11 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9, Z20 Z10
C10
C4 Z11 Z12 Z13 Z14 Z15 Z16 Z17 Z18 Z19, Z21 PCB 0.161" x 1.500 Microstrip 0.613" x 1.281 Microstrip 0.248" x 0.865 Microstrip 0.087" x 0.425 Microstrip 0.309" x 0.090 Microstrip 0.193" x 0.516 Microstrip 0.279" x 0.080 Microstrip 0.731" x 0.080 Microstrip 0.507" x 0.040 Microstrip Arlon CuClad 250GX - 0300 - 55 - 22, 0.030, r = 2.55
0.457 x 0.080 Microstrip 0.250 x 0.080 Microstrip 0.605 x 0.040 Microstrip 0.080 x 0.449 Microstrip 0.374 x 0.608 Microstrip 0.118 x 1.252 Microstrip 0.778 x 1.710 Microstrip 0.095 x 1.710 Microstrip 0.482 x 0.050 Microstrip 0.138 x 1.500 Microstrip
Figure 1. MRF6V12500HR3(HSR3) Test Circuit Schematic
Table 5. MRF6V12500HR3(HSR3) Test Circuit Component Designations and Values
Part C1, C2 C3, C4, C5, C6 C7, C10 C8, C11, C13, C16 C9 C12 C14, C15 R1, R2 R3, R4 Description 5.1 pF Chip Capacitors 33 pF Chip Capacitors 10 F, 50 V Chip Capacitors 2.2 F, 100 V Chip Capacitors 22 F, 25 V Chip Capacitor 1 F, 100 V Chip Capacitor 470 F, 63 V Electrolytic Capacitors 56 , 1/4 W Chip Resistors 0 , 3 A Chip Resistors Part Number ATC100B5R1CT500XT ATC100B330JT500XT GRM55DR61H106KA88L 2225X7R225KT3AB TPSD226M025R0200 GRM31CR72A105KA01L MCGPR63V477M13X26 - RH CRCW120656R0FKEA CRCW12060000Z0EA Manufacturer ATC ATC Murata ATC AVX Murata Multicomp Vishay Vishay
MRF6V12500HR3 MRF6V12500HSR3 RF Device Data Freescale Semiconductor 3
C14 C12 R3 C9 MRF6V12500H Rev. 1 C8 C7 R1 C3 C5 C13 C15
CUT OUT AREA
C2
C1
R2 C11 C10 R4
C4
C6 C16
Figure 2. MRF6V12500HR3(HSR3) Test Circuit Component Layout
MRF6V12500HR3 MRF6V12500HSR3 4 RF Device Data Freescale Semiconductor
TYPICAL CHARACTERISTICS
10000 MAXIMUM OPERATING Tcase (C) Ciss 1000 C, CAPACITANCE (pF) Coss 100 Measured with 30 mV(rms)ac @ 1 MHz VGS = 0 Vdc 160 140 120 100 80 60 40 20 0 0 10 20 30 40 50 0 5 10 15 20 25 VDS, DRAIN-SOURCE VOLTAGE (VOLTS) DUTY CYCLE (%) VDD = 50 Vdc, IDQ = 200 mA f = 1030 MHz, Pulse Width = 128 sec Pout = 525 W Pout = 500 W Pout = 475 W
10
1 Crss 0.1
Figure 3. Capacitance versus Drain - Source Voltage
22 21 Gps, POWER GAIN (dB) 20 19 18 17 16 15 14 30 VDD = 50 Vdc, IDQ = 200 mA, f = 1030 MHz Pulse Width = 128 sec, Duty Cycle = 10% 100 Pout, OUTPUT POWER (WATTS) PULSED D Gps 80 70 D, DRAIN EFFICIENCY (%) 60 50 40 30 20 10 0 1000 Pout, OUTPUT POWER (dBm)
Figure 4. Safe Operating Area
62 P3dB = 57.6 dBm (575 W) 61 Ideal 60 59 P1dB = 57.1 dBm (511 W) 58 57 Actual 56 55 54 53 52 51 VDD = 50 Vdc, IDQ = 200 mA, f = 1030 MHz Pulse Width = 128 sec, Duty Cycle = 10% 50 49 32 34 36 38 40 42 30 Pin, INPUT POWER (dBm) PULSED
Figure 5. Pulsed Power Gain and Drain Efficiency versus Output Power
22 22 21 21 Gps, POWER GAIN (dB) IDQ = 800 mA Gps, POWER GAIN (dB) 20 19 18 17 16 15 14 VDD = 50 Vdc, f = 1030 MHz Pulse Width = 128 sec, Duty Cycle = 10% 17 30 100 Pout, OUTPUT POWER (WATTS) PULSED 1000 13 12 30
Figure 6. Pulsed Output Power versus Input Power
20 600 mA 400 mA 19 200 mA
IDQ = 200 mA, f = 1030 MHz Pulse Width = 128 sec Duty Cycle = 10% 40 V VDD = 30 V 35 V
50 V 45 V
18
100 Pout, OUTPUT POWER (WATTS) PULSED
1000
Figure 7. Pulsed Power Gain versus Output Power
Figure 8. Pulsed Power Gain versus Output Power
MRF6V12500HR3 MRF6V12500HSR3 RF Device Data Freescale Semiconductor 5
TYPICAL CHARACTERISTICS
700 TC = -30_C 600 Pout, OUTPUT POWER (dBm) 500 400 300 200 100 0 0 2 4 6 8 10 12 Pin, INPUT POWER (dBm) PULSED VDD = 50 Vdc, IDQ = 200 mA, f = 1030 MHz Pulse Width = 128 sec, Duty Cycle = 10% 55_C 25_C Gps, POWER GAIN (dB) 85_C 22 21 20 19 18 85_C 17 16 15 14 30 D VDD = 50 Vdc, IDQ = 200 mA, f = 1030 MHz Pulse Width = 128 sec, Duty Cycle = 10% 100 Pout, OUTPUT POWER (WATTS) PULSED TC = -30_C 60 25_C 55_C 50 40 30 20 10 0 1000 Gps 80 70 D, DRAIN EFFICIENCY (%)
Figure 9. Pulsed Output Power versus Input Power
109
Figure 10. Pulsed Power Gain and Drain Efficiency versus Output Power
108 MTTF (HOURS)
107
106
105 90 110 130 150 170 190 210 230 250 TJ, JUNCTION TEMPERATURE (C) This above graph displays calculated MTTF in hours when the device is operated at VDD = 50 Vdc, Pout = 500 W Peak, Pulse Width = 128 sec, Duty Cycle = 10%, and D = 62%. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product.
Figure 11. MTTF versus Junction Temperature
MRF6V12500HR3 MRF6V12500HSR3 6 RF Device Data Freescale Semiconductor
Zo = 5
f = 1030 MHz
Zload
f = 1030 MHz Zsource
VDD = 50 Vdc, IDQ = 200 mA, Pout = 500 W Peak f MHz 1030 Zsource W 1.36 - j1.27 Zload W 2.50 - j0.17
Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network
Input Matching Network
Device Under Test
Z
source
Z
load
Figure 12. Series Equivalent Source and Load Impedance
MRF6V12500HR3 MRF6V12500HSR3 RF Device Data Freescale Semiconductor 7
PACKAGE DIMENSIONS
B G
1 2X
Q bbb
M
TA
M
B
M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. DIM A B C D E F G H K M N Q R S aaa bbb ccc INCHES MIN MAX 1.335 1.345 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 1.100 BSC 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 .118 .138 0.365 0.375 0.365 0.375 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 33.91 34.16 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 27.94 BSC 1.45 1.70 4.32 5.33 19.66 19.96 19.60 20.00 3.00 3.51 9.27 9.53 9.27 9.52 0.127 REF 0.254 REF 0.381 REF
3 (FLANGE)
B
2
K
D bbb
M
TA
M
B
M
M
(INSULATOR)
R
M
(LID)
bbb N H
(LID)
M
TA
B
M
ccc
M
TA
M
B
M
S
M
(INSULATOR)
ccc C
TA
M
B
M
aaa
M
TA
M
B
M
F E A
(FLANGE)
A
T
SEATING PLANE
CASE 465 - 06 ISSUE G NI - 780 MRF6V12500HR3
STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE
4X U (FLANGE)
B
1
4X Z (LID)
(FLANGE)
B
2
2X
K
D bbb
M
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. DIM A B C D E F H K M N R S U Z aaa bbb ccc INCHES MIN MAX 0.805 0.815 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 0.365 0.375 0.365 0.375 --- 0.040 --- 0.030 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 20.45 20.70 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 1.45 1.70 4.32 5.33 19.61 20.02 19.61 20.02 9.27 9.53 9.27 9.52 --- 1.02 --- 0.76 0.127 REF 0.254 REF 0.381 REF
TA
M
B
M
N
(LID)
R
M
(LID)
ccc M H
3
TA
M
B
M
ccc aaa
M
TA TA
M
B B
M
(INSULATOR)
S
M
(INSULATOR) M
bbb C
M
TA
B
M
M
M
F T
SEATING PLANE
E A
(FLANGE)
A
STYLE 1: PIN 1. DRAIN 2. GATE 5. SOURCE
CASE 465A - 06 ISSUE H NI - 780S MRF6V12500HSR3
MRF6V12500HR3 MRF6V12500HSR3 8 RF Device Data Freescale Semiconductor
PRODUCT DOCUMENTATION, TOOLS AND SOFTWARE
Refer to the following documents, tools and software to aid your design process. Application Notes * AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins * EB212: Using Data Sheet Impedances for RF LDMOS Devices Software * Electromigration MTTF Calculator For Software and Tools, do a Part Number search at http://www.freescale.com, and select the "Part Number" link. Go to the Software & Tools tab on the part's Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision 0 Date Sept. 2009 * Initial Release of Data Sheet Description
MRF6V12500HR3 MRF6V12500HSR3 RF Device Data Freescale Semiconductor 9
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MRF6V12500HR3 MRF6V12500HSR3
Rev. 10 0, 9/2009 Document Number: MRF6V12500H
RF Device Data Freescale Semiconductor

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