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 EIC5359-10
UPDATED 08/16/2005
5.30 - 5.90 GHz 10W Internally Matched Power FET
2X 0.079 MIN 4X 0.102
FEATURES * 5.30-5.90 GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM * HIGH PAE: 30% TYPICAL * +40.5 dBm TYPICAL P1dB OUTPUT POWER * 10dB TYPICAL G1dB POWER GAIN * HERMETIC METAL FLANGE PACKAGE
Excelics EIC5359-10
0.945 0.803
0.024 0.580
YYWW
0.315 0.685 0.010 0.158 0.617 0.004 0.055 0.095
0.055 0.168
Caution! ESD sensitive device.
ELECTRICAL CHARACTERISTICS (Ta = 25 C)
SYMBOLS PARAMETERS/TEST CONDITIONS Output Power at 1dB Compression f=5.3-5.9GHz, Vds=10V, Idsq=3200Ma Gain at 1dB Compression f=5.3-5.9GHz, Vds=10V, Idsq=3200mA Gain Flatness f = 5.3-5.9GHz, Vds = 10 V, Idsq = 3200mA Power Added Efficiency at 1dB compression f=5.3-5.9GHz, Vds=10V, Idsq=3200mA Drain Current at 1dB Compression Output 3rd Order Intermodulation Distortion f=5.9GHz 2 f=10MHz 2-Tone Test. Pout=29.5 dBm S.C.L Ids @ 65% Idss Saturated Drain Current Pinch-off Voltage Vds=3V, Vgs=0V Vds=3V, Ids=60mA -43
1
O
MIN 39.5 9
TYP 40.5 10
MAX
UNIT dBm dB
P1dB G1dB G PAE Id1dB IM3 Idss Vp Rth
0.6 30 3300 -46 5800 -2.5 2.5 6400 -4 3
o
dB %
3800
mA dBc mA V C/W
Thermal Resistance 3(Au-Sn Eutectic Attach)
2) S.C.L = Single Carrier Level. 3) Overall Rth depends on case mounting.
Note: 1) Tested with 50 Ohm gate resistor.
ABSOLUTE MAXIMUM RATING1,2
SYMBOLS PARAMETERS Drain-Source Voltage Gate-Source Voltage Drain Current Forward Gate Current Reserve Gate Current Input Power Channel Temperature Storage Temperature Total Power Dissipation ABSOLUTE1 15 -5 IDSS 120mA -20.4mA 39.5dBm 175 C
o -65 to +175 C o
CONTINUOUS2 10V -4V 5000mA 40mA -6.8mA @ 3dB Compression 175 C -65 to +175 oC 50W
o
Vds Vgs Ids Igsf Igsr Pin Tch Tstg Pt
50W
Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals.
Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 1 of 1 Revised August 2005


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