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APT75F50B2 APT75F50L
500V,75A,0.075Max,trr 310ns
N-ChannelFREDFET
Power MOS 8TM is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a greatly reduced ratio of Crss/Ciss result in excellent noise immunity and low switching loss. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control di/dt during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency.
T-Max(R)
TO-264
APT75F50B2
APT75F50L
D
Single die FREDFET
G S
FEATURES
*FastswitchingwithlowEMI *Lowtrrforhighreliability *UltralowCrssforimprovednoiseimmunity *Lowgatecharge *Avalancheenergyrated *RoHScompliant
TYPICAL APPLICATIONS
* ZVSphaseshiftedandotherfullbridge *Halfbridge *PFCandotherboostconverter * Buckconverter *Singleandtwoswitchforward *Flyback
Absolute Maximum Ratings
Symbol ID IDM VGS EAS IAR Parameter Continuous Drain Current @ TC = 25C Continuous Drain Current @ TC = 100C Pulsed Drain Current Gate-Source Voltage Single Pulse Avalanche Energy 2 Avalanche Current, Repetitive or Non-Repetitive
1
Ratings 75 47 230 30 1580 37
Unit
A
V mJ A
Thermal and Mechanical Characteristics
Symbol PD RJC RCS TJ,TSTG TL WT Characteristic Total Power Dissipation @ TC = 25C Junction to Case Thermal Resistance Case to Sink Thermal Resistance, Flat, Greased Surface Operating and Storage Junction Temperature Range Soldering Temperature for 10 Seconds (1.6mm from case) Package Weight 0.22 6.2 10 1.1 -55 0.11 150 300 Min Typ Max 1040 0.12 Unit W C/W
C oz g in*lbf N*m
05-2009 050-8126 Rev C
Torque
Mounting Torque ( TO-264Package), 4.40 or M3 screw
MicrosemiWebsite-http://www.microsemi.com
Static Characteristics
Symbol
VBR(DSS) VBR(DSS)/TJ RDS(on) VGS(th) VGS(th)/TJ IDSS IGSS
TJ=25Cunlessotherwisespecified
Test Conditions
VGS = 0V, ID = 250A Reference to 25C, ID = 250A VGS = 10V, ID = 37A VGS = VDS, ID = 2.5mA VDS = 500V VGS = 0V TJ = 25C TJ = 125C
APT75F50B2_L
Typ 0.60 0.064 4 -10 Max Unit V V/C V mV/C 250 1000 100 A nA
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain-Source On Resistance
3
Min 500
Gate-Source Threshold Voltage Threshold Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Source Leakage Current
2.5
0.075 5
VGS = 30V
Dynamic Characteristics
Symbol
gfs Ciss Crss Coss Co(cr) Co(er) Qg Qgs Qgd td(on) tr td(off) tf
4
TJ=25Cunlessotherwisespecified
Test Conditions
VDS = 50V, ID = 37A VGS = 0V, VDS = 25V f = 1MHz
Parameter
Forward Transconductance Input Capacitance Reverse Transfer Capacitance Output Capacitance Effective Output Capacitance, Charge Related
Min
Typ 55 11600 160 1250 725
Max
Unit S
pF
VGS = 0V, VDS = 0V to 333V
5
Effective Output Capacitance, Energy Related Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Current Rise Time Turn-Off Delay Time Current Fall Time
VGS = 0 to 10V, ID = 37A, VDS = 250V ResistiveSwitching VDD = 333V, ID = 37A RG = 2.2 6 , VGG = 15V
365 290 65 130 45 55 120 39 nC
ns
Source-Drain Diode Characteristics
Symbol
IS ISM VSD trr Qrr Irrm dv/dt
Parameter
Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) 1 Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Peak Recovery dv/dt
Test Conditions
MOSFET symbol showing the integral reverse p-n junction diode (body diode)
Min
D
Typ
Max 75
Unit
G S
A 230 1.0 310 570 1.48 3.85 11.3 16.6 20 V ns C A V/ns
ISD = 37A, TJ = 25C, VGS = 0V TJ = 25C TJ = 125C ISD = 37A 3 VDD = 100V diSD/dt = 100A/s TJ = 25C TJ = 125C TJ = 25C TJ = 125C ISD 37A, di/dt 1000A/s, VDD = 333V, TJ = 125C
1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 2 Starting at TJ = 25C, L = 2.31mH, RG = 25, IAS = 37A.
05-2009 Rev C 050-8126
3 Pulse test: Pulse Width < 380s, duty cycle < 2%. 4 Co(cr) is defined as a fixed capacitance with the same stored charge as COSS with VDS = 67% of V(BR)DSS. 5 Co(er) is defined as a fixed capacitance with the same stored energy as COSS with VDS = 67% of V(BR)DSS. To calculate Co(er) for any value of VDS less than V(BR)DSS, use this equation: Co(er) = -1.65E-7/VDS^2 + 5.51E-8/VDS + 2.03E-10. 6 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452)
Microsemireservestherighttochange,withoutnotice,thespecificationsandinformationcontainedherein.
300 250 ID, DRAIN CURRENT (A)
V
GS
= 10V
140 120 ID, DRIAN CURRENT (A)
TJ = -55C
APT75F50B2_L
T = 125C
J
V
GS
= 7 & 10V 6.5V
200 150 100 50 0
TJ = 125C TJ = 150C TJ = 25C
100 80 60 40 20
5.5V 6V
5V
0 5 10 15 20 25 VDS(ON), DRAIN-TO-SOURCE VOLTAGE (V) Figure1,OutputCharacteristics
NORMALIZED TO VGS = 10V @ 37A
0
0
5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure2,OutputCharacteristics
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
2.5
250
VDS> ID(ON) x RDS(ON) MAX. 250SEC. PULSE TEST @ <0.5 % DUTY CYCLE
2.0 ID, DRAIN CURRENT (A)
200
1.5
150
TJ = -55C TJ = 25C TJ = 125C
1.0
100
0.5
50
0 -55 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure3,RDS(ON)vsJunctionTemperature 100
TJ = -55C
0
0
1 2 3 4 5 6 7 8 VGS, GATE-TO-SOURCE VOLTAGE (V) Figure4,TransferCharacteristics
20,000 10,000 Ciss
gfs, TRANSCONDUCTANCE
80 C, CAPACITANCE (pF)
TJ = 25C
60
TJ = 125C
1000 Coss 100 Crss
40
20
0
0
10
20 30 40 50 60 70 ID, DRAIN CURRENT (A) Figure5,GainvsDrainCurrent
80
10
100 200 300 400 500 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure6,CapacitancevsDrain-to-SourceVoltage
0
16 VGS, GATE-TO-SOURCE VOLTAGE (V) 14 12 10 8 6 4 2
ID = 37A
200 ISD, REVERSE DRAIN CURRENT (A) 180 160 140 120 100 80 60 40 20 0.3 0.6 0.9 1.2 1.5 VSD, SOURCE-TO-DRAIN VOLTAGE (V) Figure8,ReverseDrainCurrentvsSource-to-DrainVoltage 0 0
TJ = 25C
VDS = 100V VDS = 250V
VDS = 400V
050-8126
50 100 150 200 250 300 350 400 Qg, TOTAL GATE CHARGE (nC) Figure7,GateChargevsGate-to-SourceVoltage
0
0
Rev C
05-2009
TJ = 150C
300 100 ID, DRAIN CURRENT (A)
IDM
APT75F50B2_L
300 100 ID, DRAIN CURRENT (A)
IDM
10
Rds(on)
13s 100s 1ms 10ms 100ms DC line
10
Rds(on)
13s 100s 1ms 10ms 100ms DC line
1
TJ = 125C TC = 75C
1
TJ = 150C TC = 25C
0.1
1
10 100 800 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure9,ForwardSafeOperatingArea
0.1
Scaling for Different Case & Junction Temperatures: ID = ID(T = 25C)*(TJ - TC)/125
C
10 100 800 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure10,MaximumForwardSafeOperatingArea
1
0.14 0.12 D = 0.9 0.10 0.7 0.08 0.06 0.04 0.02 0 0.5
Note:
ZJC, THERMAL IMPEDANCE (C/W)
PDM
t1 t2
0.3 0.1 0.05 10-5 10-4 SINGLE PULSE
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t1 = Pulse Duration
t
10-3 10-2 10-1 RECTANGULAR PULSE DURATION (seconds) Figure11.MaximumEffectiveTransientThermalImpedanceJunction-to-CasevsPulseDuration
1.0
T-MAX(R)(B2)PackageOutline
4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244)
TO-264(L)PackageOutline
4.60 (.181) 5.21 (.205) 1.80 (.071) 2.01 (.079) 19.51 (.768) 20.50 (.807) 3.10 (.122) 3.48 (.137) 5.79 (.228) 6.20 (.244)
e3 100% Sn Plated
Drain
20.80 (.819) 21.46 (.845)
Drain
25.48 (1.003) 26.49 (1.043)
4.50 (.177) Max.
2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 2.29 (.090) 2.69 (.106) 19.81 (.780) 21.39 (.842)
05-2009
2.29 (.090) 2.69 (.106)
0.40 (.016) 0.79 (.031)
19.81 (.780) 20.32 (.800)
1.01 (.040) 1.40 (.055)
Gate Drain Source
0.48 (.019) 0.84 (.033) 2.59 (.102) 3.00 (.118)
Gate Drain Source
Rev C
2.21 (.087) 2.59 (.102)
5.45 (.215) BSC 2-Plcs.
0.76 (.030) 1.30 (.051) 2.79 (.110) 3.18 (.125) 5.45 (.215) BSC 2-Plcs.
050-8126
These dimensions are equal to the TO-247 without the mounting hole. Dimensions in Millimeters and (Inches)
Dimensions in Millimeters and (Inches)
Microsemi's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.

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