|
If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
Datasheet File OCR Text: |
7-Segment LED-Chip Preliminary Radiation Red Type Diffusion type 6/22/2007 Technology GaAsP/GaAs EDC-660-19-02 rev. 05/07 Electrodes P (anode) up 690 24 typ. dimensions (m) 275 typ. thickness 330 m cathode Au-alloy metalization anode Al metalization Application This miniature device is an excellent choice for applications where small size and reduced space are important factors such as complex displays in optical devices for laboratory, measurement, control- and medical equipment. Miscellaneous Parameters Tamb = 25 unless otherwise specified C, Parameter Temperature coefficient of C Operating temperature range Storage temperature range Test onditions Ta = -40..120 C Symbol TC(C) Tamb Tstg Value 0.15 -40 to +120 -40 to +125 Unit 785 nm/K C C Optical and Electrical Characteristics Tamb = 25 unless otherwise specified C, Test Parameter conditions1 Forward voltage Reverse voltage Luminous intensity/segment2 IV ratio segment to segment2 IV ratio to adjacent chip Peak wavelength Spectral bandwidth at 50% 1 2 Symbol VF VR Iv Min Typ 1.75 Max 2.0 Unit V V IF = 5 mA IR = 10 A IF = 5 mA IF = 5 mA IF = 5 mA IF = 5 mA IF = 5 mA 5 55 80 1.75 2.00 cd p 0.5 645 655 17 665 nm nm Current for one segment Measured on bare chip on TO-18 header Labeling Type EDC-660-19-02 Lot N Iv(typ) [cd] VF(typ) [V] Quantity Packing: Chips in wafer pack or on adhesive film with wire-bond side on top *Note: All measurements carried out with EPIGAP equipment EPIGAP Optoelektronik GmbH, D-12555 Berlin, Kopenicker Str.325 b, Haus 201 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545 1 of 1 |
Price & Availability of EDC-660-19-02 |
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |