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APT50GS60BRDL(G)
600V, 50A, VCE(ON) = 2.8V Typical
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
Resonant Mode Combi IGBT(R)
The Thunderbolt HSTM IGBT used in this resonant mode combi is based on thin wafer non-punch through (NPT) technology similar to the Thunderbolt(R) series, but trades higher VCE(ON) for significantly lower turn-on energy Eoff. The low switching losses enable operation at switching frequencies over 100kHz, approaching power MOSFET performance but lower cost. An extremely tight parameter distribution combined with a positive VCE(ON) temperature coefficient make it easy to parallel Thunderbolts HSTM IGBT's. Controlled slew rates result in very good noise and oscillation immunity and low EMI. The short circuit duration rating of 10s make these IGBT's suitable for motor drive and inverter applications. Reliability is further enhanced by avalanche energy ruggedness. Combi versions are packaged with a high speed, soft recovery DL series diode.
G C
TO -24 7
Single die IGBT with separate DL
C
E G E
Features
* Fast Switching with low EMI * Very Low EOFF for Maximum Efficiency * Short circuit rated * Low Gate Charge * RoHS Compliant * Tight parameter distribution * Easy paralleling * Low Forward Diode Voltage (VF) * Ultrasoft Recovery Diode
Typical Applications
* ZVS Phase Shifted Bridge * Resonant Mode Switching * Phase Shifted Bridge * Welding * Induction heating * High Frequency SMPS
Absolute Maximum Ratings
Symbol I C1 I C2 I CM VGE SSOA tSC Parameter Continuous Collector Current TC = @ 25C Continuous Collector Current TC = @ 100C Pulsed Collector Current 1 Gate-Emitter Voltage Switching Safe Operating Area Short Circut Withstand Time 3 Rating 93 50 195 30V 195 10 s V A Unit
Thermal and Mechanical Characteristics
Symbol PD RJC RCS TJ, TSTG TL WT Torque Parameter Total Power Dissipation TC = @ 25C Junction to Case Thermal Resistance Case to Sink Thermal Resistance, Flat Greased Surface Operating and Storage Junction Temperature Range Soldering Temperature for 10 Seconds (1.6mm from case) Package Weight Mounting Torque (TO-247), 6-32 M3 Screw IGBT Diode -55 0.11 0.22 5.9 Min Typ Max 415 0.30 0.63 150 300 10 1.1 C oz in*lbf N*m
11-2008 052-6352 Rev B
Unit W C/W
g
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should be Followed.
Microsemi Website - http://www.microsemi.com
Static Characteristics
Symbol VBR(CES)
VBR(CES)/TJ
TJ = 25C unless otherwise specified
Test Conditions VGE = 0V, IC = 250A
Reference to 25C, IC = 250A
APT50GS60BRDL(G)
Min 600 3 Typ 0.60 2.8 3.25 4 6.7 Max 3.15 5 50 1000 100 mV/C A nA V Unit V V/C
Parameter Collector-Emitter Breakdown Voltage
Breakdown Voltage Temperature Coeff
VCE(ON) VGE(th) VGE(th)/TJ ICES IGES
Collector-Emitter On Voltage 4 Gate-Emitter Threshold Voltage Threshold Voltage Temp Coeff Zero Gate Voltage Collector Current Gate-Emitter Leakage Current
VGE = 15V IC = 50A
TJ = 25C TJ = 125C
VGE = VCE, IC = 1mA VCE = 600V, VGE = 0V TJ = 25C TJ = 125C
VGE = 20V
Dynamic Characteristics
Symbol gfs Cies Coes Cres Co(cr) Co(er) Qg Qge Ggc td(on) tr td(off) tf Eon1 Eon2 Eoff td(on) tr td(off) tf Eon1 Eon2 Eoff Parameter
TJ = 25C unless otherwise specified
Test Conditions VCE = 50V, IC = 50A VGE = 0V, VCE = 25V f = 1MHz Min Typ 31 2635 240 145 115 85 Inductive Switching IGBT and Diode:
8 9 10
Max -
Unit S
Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Reverse Transfer Capacitance Charge Related 5 Reverse Transfer Capacitance Current Related 6 Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Energy Turn-On Switching Energy Turn-Off Switching Energy Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Energy Turn-On Switching Energy
8 9
pF
VGE = 0V VCE = 0 to 400V
VGE = 0 to 15V IC = 50A, VCE = 300V
235 18 100 16 33 225 37 TBD 1.2 0.755 33 33 250 23 TBD 1.7 0.950
mJ ns mJ ns nC
-
TJ = 25C, VCC = 400V, IC = 50A RG = 4.7 7, VGG = 15V
Inductive Switching IGBT and Diode: TJ = 125C, VCC = 400V, IC = 50A RG = 4.7 7, VGG = 15V
-
Turn-Off Switching Energy 10
052-6352
Rev B
11-2008
TYPICAL PERFORMANCE CURVES
150 125 100 75
TJ = 25C
VGE = 15V
250
T = 125C
APT50GS60BRDL(G)
J
225 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 200 175 150 125 100 75 50 25 0
V
GE
= 13 & 15V 11V 10V 9V 8V 7V 6V
50
TJ = 125C
25
TJ = 150C
0 0 1 2 3 4 5 6 VCE(ON), COLLECTER-TO-EMITTER VOLTAGE (V) FIGURE 1, Output Characteristics
250s PULSE TEST<0.5 % DUTY CYCLE
0 5 10 15 20 25 30 VCE, COLLECTER-TO-EMITTER VOLTAGE (V) FIGURE 2, Output Characteristics
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
150 125 100 75 50 25 0
6 5 IC = 100A 4 IC = 50A 3
TJ = 25C. 250s PULSE TEST <0.5 % DUTY CYCLE
IC, COLLECTOR CURRENT (A)
IC = 25A 2 1 0
TJ = 25C TJ = 125C
0
2 4 6 8 10 12 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 3, Transfer Characteristics
6
8 10 12 14 16 VGE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 4, On State Voltage vs Gate-to- Emitter Voltage 16 VGE, GATE-TO-EMITTER VOLTAGE (V) 14 12 10 8 6 4 2 0 0 50 100 150 200 GATE CHARGE (nC) FIGURE 6, Gate Charge 250 VCE = 480V VCE = 120V VCE = 300V
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
5 IC = 100A 4 IC = 50A
VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE
3
2
IC = 25A
1
25 50 75 100 125 150 TJ, Junction Temperature (C) FIGURE 5, On State Voltage vs Junction Temperature 5000 Cies IC, DC COLLECTOR CURRENT(A) 1000
0
0
100 90 80 70 60 50 40 30 20 10 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 8, DC Collector Current vs Case Temperature 0 25 11-2008 052-6352 Rev B
C, CAPACITANCE ( F)
P
100
Coes Cres
0 100 200 300 400 500 600 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 7, Capacitance vs Collector-To-Emitter Voltage
10
TYPICAL PERFORMANCE CURVES
20 td (OFF), TURN-OFF DELAY TIME (ns) td(ON), TURN-ON DELAY TIME (ns) 18 16 14 12 10 8 6 4 VCE = 400V 2 RG = 4.7 0 0
L = 100H TJ = 25C, TJ =125C
300 250 200 150 100 50 VCE = 400V RG = 4.7
VGE =15V,TJ=125C
APT50GS60BRDL(G)
VGE = 15V
VGE =15V,TJ=25C
20 40 60 80 100 120 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 9, Turn-On Delay Time vs Collector Current 100
RG = 4.7, L = 100H, VCE = 400V
20 40 60 80 100 120 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 10, Turn-Off Delay Time vs Collector Current 80 70
RG = 4.7, L = 100H, VCE = 400V
0
L = 100H
0
80 tr, RISE TIME (ns)
TJ = 25 or 125C,VGE = 15V
60 tf, FALL TIME (ns) 50 40 30 20 10
TJ = 25C, VGE = 15V TJ = 125C, VGE = 15V
60
40
20
0 20 40 60 80 100 120 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 11, Current Rise Time vs Collector Current 6000 EON2, TURN ON ENERGY LOSS (J) 5000 4000 3000 2000 1000
TJ = 25C,VGE =15V
V = 400V CE V = +15V GE R = 4.7
G
0
0 20 40 60 80 100 120 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 12, Current Fall Time vs Collector Current 2500 EOFF, TURN OFF ENERGY LOSS (J)
V = 400V CE V = +15V GE R = 4.7
G
0
2000
TJ = 125C,VGE =15V
TJ = 125C, VGE = 15V
1500
1000
500
TJ = 25C, VGE = 15V
0 20 40 60 80 100 120 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 13, Turn-On Energy Loss vs Collector Current 10 SWITCHING ENERGY LOSSES mJ)
V = 400V CE V = +15V GE T = 125C
J
0
0 20 40 60 80 100 120 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 14, Turn Off Energy Loss vs Collector Current 6
V = 400V CE V = +15V GE R = 4.7
G
0
Eon2,100A
SWITCHING ENERGY LOSSES (mJ)
8 Eoff,100A
5 4 3
Eon2,100A
6
4 Eon2,50A 2 Eoff,50A Eoff,25A Eon2,25A 0
Eoff,100A
11-2008
2
Eon2,50A
1
Eon2,25A
Eoff,50A Eoff,25A
Rev B
052-6352
10 20 30 40 50 RG, GATE RESISTANCE (OHMS) FIGURE 15, Switching Energy Losses vs. Gate Resistance
0
25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) FIGURE 16, Switching Energy Losses vs Junction Temperature
0
0
TYPICAL PERFORMANCE CURVES
200 100 IC, COLLECTOR CURRENT (A)
ICM
APT50GS60BRDL(G)
200 100 IC, COLLECTOR CURRENT (A)
ICM
10
VCE(on)
13s 100s 1ms 10ms
10
VCE(on)
13s 100s 1ms 10ms
1
100ms DC line TJ = 125C TC = 75C
1
TJ = 150C TC = 25C
100ms DC line
0.1
1 10 100 800 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) Figure 17, Forward Safe Operating Area
0.1
Scaling for Different Case & Junction Temperatures: IC = IC(T = 25C)*(TJ - TC)/125
C
1 10 100 800 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) Figure 18, Maximum Forward Safe Operating Area
0.35 0.30 0.9 0.25 0.7 0.20 0.15 0.10 0.05 0 0.5
Note:
ZJC, THERMAL IMPEDANCE (C/W)
PDM
0.3
t1 t2
0.1 0.05 10-5 10-4
SINGLE PULSE
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t
10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) Figure 19, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
1.0
160 FMAX, OPERATING FREQUENCY (kHz) 140 120 100 80 60 40 20 0 0
T = 125C J T = 75C C D = 50 % V = 400V CE R = 4.7
G
75C
TJ (C)
0.0731 Dissipated Power (Watts) 0.00606 0.260
TC (C)
0.226
ZEXT
F max = min (f max, f max2) 0.05 f max1 = t d(on) + tr + td(off) + tf
100C
f max2 = Pdiss =
Pdiss - P cond E on2 + E off TJ - T C R JC
ZEXT are the external thermal impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction.
Figure 20, Transient Thermal Impedance Model
20 30 40 50 60 70 80 90 IC, COLLECTOR CURRENT (A) Figure 21, Operating Frequency vs Collector Current
10
052-6352
Rev B
11-2008
APT50GS60BRDL(G)
APT50DL60
Gate Voltage
10% td(on) TJ = 125C
tr
Collector Current 90%
V CC
IC
V CE
5% Collector Voltage 5% 10%
A D.U.T.
Switching Energy
Figure 22, Inductive Switching Test Circuit
Figure 23, Turn-on Switching Waveforms and Definitions
Gate Voltage 90%
TJ = 125C
td(off) 90% tf 10%
Collector Voltage
Collector Current
0
Switching Energy
Figure 24, Turn-off Switching Waveforms and Definitions
FOOT NOTE: 1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 3 Short circuit time: VGE = 15V, VCC 600V, TJ 150C 4 Pulse test: Pulse width < 380s, duty cycle < 2% 5 Co(cr) is defined as a fixed capacitance with the same stored charge as Coes with VCE = 67% of V(BR)CES. 6 Co(er) is defined as a fixed capacitance with the same stored energy as Coes with VCE = 67% of V(BR)CES. To calculate Co(er) for any value of VCE less than V(BR)CES, use this equation: Co(er) = 5.57E-8/VDS^2 + 7.15E-8/VDS + 2.75E-10. 7 RG is external gate resistance, not including internal gate resistance or gate driver impedance (MIC4452). 8 Eon1 is the inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on switching loss. It is measured by clamping the inductance with a Silicon Carbide Schottky diode. 9 Eon2 is the inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on energy. 10 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1.
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
052-6352
Rev B
11-2008
DYNAMIC CHARACTERISTICS
APT50GS60BRDL(G)
ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE
MAXIMUM RATINGS
Symbol IF(AV) IF(RMS) IFSM Characteristic / Test Conditions Maximum Average Forward Current (TC = 124C, Duty Cycle = 0.5) RMS Forward Current (Square wave, 50% duty) Non-Repetitive Forward Surge Current (TJ = 45C, 8.3ms)
All Ratings: TC = 25C unless otherwise specified.
APT50GS60BRDL(G) UNIT Amps
50 150 320
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions IF = 50A VF Forward Voltage IF = 100A IF = 50A, TJ = 125C MIN TYP MAX UNIT Volts
1.25 2.0 1.25
MIN TYP
1.6
DYNAMIC CHARACTERISTICS
Symbol trr trr Qrr IRRM trr Qrr IRRM trr Qrr IRRM Characteristic Test Conditions MAX UNIT ns nC Reverse Recovery Time I = 1A, di /dt = -100A/s, V = 30V, T = 25C F F R J Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current
0.7 ZJC, THERMAL IMPEDANCE (C/W) 0.6 0.5 0.4 0.3 0.2 0.1 0
Note:
52 399 1498 9 649 3734 13 284 5134 34 -
IF = 50A, diF/dt = -200A/s VR = 400V, TC = 25C
-
Amps ns nC Amps ns nC Amps
IF =50A, diF/dt = -200A/s VR = 400V, TC = 125C
-
IF = 50A, diF/dt = -1000A/s VR = 400V, TC = 125C
PDM
t1 t2
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t
10-5
10-4
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (seconds) FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION 11-2008 052-6352 Rev B
TJ (C)
0.316
Dissipated Power (Watts)
TC (C)
0.312
ZEXT are the external thermal impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction.
0.00467
0.1483
FIGURE 1b, TRANSIENT THERMAL IMPEDANCE MODEL
ZEXT
TYPICAL PERFORMANCE CURVES
120 TJ= 125C 100 IF, FORWARD CURRENT (A) TJ= 55C 80 TJ= 25C 60 40 20 0 TJ= 150C trr, COLLECTOR CURRENT (A) 700 100A 600 500 400 300 200 100 0 25A
APT50GS60BRDL(G)
T = 125C J V = 400V
R
50A
0.5 1.0 1.5 2.0 2.5 3.0 VF, ANODE-TO-CATHODE VOLTAGE (V) FIGURE 2, Forward Current vs. Forward Voltage
T = 125C J V = 400V
R
0
0 200 400 600 800 1000 -diF/dt, CURRENT RATE OF CHANGE (A/s) FIGURE 3, Reverse Recovery Time vs. Current Rate of Change 45 IRRM, REVERSE RECOVERY CURRENT (A)
T = 125C J V = 400V
R
Qrr, REVERSE RECOVERY CHARGE (nC)
8000 7000 6000 5000 4000 3000 2000 1000
100A
40 35 30 25 20 15 10 5 0
50A 100A
50A 25A
25A
0 200 400 600 800 1000 -diF/dt, CURRENT RATE OF CHANGE (A/s) FIGURE 4, Reverse Recovery Charge vs. Current Rate of Change 1.2 1.0 0.8 0.6 0.4 0.2 0 tRR IRRM
0
0 200 400 600 800 1000 -diF/dt, CURRENT RATE OF CHANGE (A/s) FIGURE 5, Reverse Recovery Current vs. Current Rate of Change 70 60 50 IF(AV) (A) 40 30 20 10 0
Kf, DYNAMIC PARAMETERS (Normalized to 1000A/s)
QRR
Duty cycle = 0.5 TJ = 126C
0
25
50
75
100
125
150
TJ, JUNCTION TEMPERATURE (C) FIGURE 6, Dynamic Parameters vs Junction Temperature 500 CJ, JUNCTION CAPACITANCE (pF)
75 100 125 150 175 Case Temperature (C) FIGURE 7, Maximum Average Forward Current vs. Case Temperature
25
50
450 400 350 300 250 200 150 100 50 0 10 100 400 VR, REVERSE VOLTAGE (V) FIGURE 8, Junction Capacitance vs. Reverse Voltage 0
052-6352
Rev B
11-2008
Vr +18V 0V D.U.T.
trr/Qrr Waveform
diF /dt Adjust
CURRENT TRANSFORMER
Figure 9. Diode Test Circuit
1 2 3 4
IF - Forward Conduction Current diF /dt - Rate of Diode Current Change Through Zero Crossing. IRRM - Maximum Reverse Recovery Current. Zero
1
4
6
5 3 2
0.25 IRRM Slope = diM/dt
trr - Reverse Recovery Time, measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through IRRM and 0.25 IRRM passes through zero. Qrr - Area Under the Curve Defined by IRRM and trr. diM/dt - Maximum Rate of Current Increase During the Trailing Portion of trr.
5 6
Figure 10, Diode Reverse Recovery Waveform and Definitions
TO-247 (B) Package Outline
4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 6.15 (.242) BSC 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244)
Collector (Cathode)
20.80 (.819) 21.46 (.845) 3.50 (.138) 3.81 (.150)
4.50 (.177) Max. 0.40 (.016) 0.79 (.031)
2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084)
19.81 (.780) 20.32 (.800) 1.01 (.040) 1.40 (.055)
Gate Collector (Cathode)
Emitter (Anode)
Dimensions in Millimeters and (Inches)
Microsemi's products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. US and Foreign patents pending. All Rights Reserved.
052-6352
Rev B
11-2008
2.21 (.087) 2.59 (.102)
5.45 (.215) BSC 2-Plcs.

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