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| MBR10H150CT, MBRF10H150CT & SB10H150CT-1 Vishay General Semiconductor Dual Common-Cathode High-Voltage Schottky Rectifier Low Leakage Current 5.0 A TO-220AB ITO-220AB FEATURES * Guardring for overvoltage protection * Low power loss, high efficiency * Low forward voltage drop * High frequency operation 1 2 3 1 2 3 * Solder dip 260 C, 40 s * Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS For use in high frequency inverters, freewheeling and polarity protection applications. MBR10H150CT MBRF10H150CT TO-262AA 1 2 3 SB10H150CT-1 PIN 1 PIN 3 PIN 2 CASE MECHANICAL DATA Case: TO-220AB, ITO-220AB, TO-262AA Epoxy meets UL 94V-0 flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 suffix for consumer grade, meets JESD 201 class 1A whisker test Mounting Torque: 10 in-lbs maximum Polarity: As marked PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF TJ 2x5A 150 V 160 A 0.72 V 175 C MAXIMUM RATINGS (TC = 25 C unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage Working peak reverse voltage Maximum DC blocking voltage Maximum average forward rectified current (Fig. 1) total device per diode SYMBOL VRRM VRWM VDC IF(AV) IFSM IRRM ERSM EAS dV/dt TJ, TSTG VAC MBR10H150CT 150 150 150 10 5 160 1.0 10 11.25 10 000 - 65 to + 175 1500 UNIT V V V A A A mJ mJ V/s C V Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode Peak repetitive reverse current per diode at tp = 2 s, 1 kHz Peak non-repetitive reverse surge energy per diode (8/20 s waveform) Non-repetitive avalanche energy per diode at 25 C, IAS = 1.5 A, L = 10 mH Voltage rate of change (rated VR) Operating junction and storage temperature range Isolation voltage (ITO-220AB only) from terminals to heatsink t = 1 min Document Number: 88779 Revision: 18-Apr-08 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 1 MBR10H150CT, MBRF10H150CT & SB10H150CT-1 Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TC = 25 C unless otherwise noted) PARAMETER TEST CONDITIONS IF = 5.0 A Maximum instantaneous forward voltage per diode (1) IF = 5.0 A IF = 10 A IF = 10 A Maximum reverse current per diode at working peak reverse voltage (1) Note: (1) Pulse test: 300 s pulse width, 1 % duty cycle TJ = 25 C TJ = 125 C TJ = 25 C TJ = 125 C TJ = 25 C TJ = 125 C IR VF SYMBOL VALUE 0.88 0.72 0.96 0.80 5.0 1.0 A mA V UNIT THERMAL CHARACTERISTICS (TC = 25 C unless otherwise noted) PARAMETER Typical thermal resistance per diode SYMBOL RJC MBR 2.4 MBRF 4.5 MBRB 2.4 UNIT C/W ORDERING INFORMATION (Example) PACKAGE TO-220AB ITO-220AB TO-262AA PREFERRED P/N MBR10H150CT-E3/45 MBRF10H150CT-E3/45 SB10H150CT-1E3/45 UNIT WEIGHT (g) 2.06 2.20 1.58 PACKAGE CODE 45 45 45 BASE QUANTITY 50/tube 50/tube 50/tube DELIVERY MODE Tube Tube Tube RATINGS AND CHARACTERISTICS CURVES (TA = 25 C unless otherwise noted) 12 MBR, MBRB 200 TJ = TJ Max. 8.3 ms Single Half Sine-Wave Average Forward Current (A) 10 MBRF 8 Peak Forward Surge Current (A) 150 175 180 160 140 120 100 80 60 40 20 0 1 6 4 2 0 25 50 75 100 125 10 100 Case Temperature (C) Number of Cycles at 60 Hz Figure 1. Forward Derating Curve (Total) Figure 2. Maximum Non-Repetitive Peak Forward Surge Current Per Diode www.vishay.com 2 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com Document Number: 88779 Revision: 18-Apr-08 MBR10H150CT, MBRF10H150CT & SB10H150CT-1 Vishay General Semiconductor 100 10 000 Instantaneous Forward Current (A) TJ = 175 C 10 TJ = 125 C TJ = 75 C 1 Junction Capacitance (pF) 1000 100 TJ = 25 C 0.1 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 10 0.1 1 10 100 Instantaneous Forward Voltage (V) Reverse Voltage (V) Figure 3. Typical Instantaneous Forward Characteristics Per Diode Figure 5. Typical Junction Capacitance Per Diode 10 000 TJ = 175 C 1000 TJ = 125 C 100 100 Transient Thermal Impedance (C/W) Instantaneous Reverse Current (A) 10 MBRF MBR, MBRB 1 10 TJ = 75 C 1 0.1 TJ = 25 C 0.01 10 20 30 40 50 60 70 80 90 100 0.1 0.01 0.1 1 10 100 Percent of Rated Peak Reverse Voltage (%) t - Pulse Duration (s) Figure 4. Typical Reverse Characteristics Per Diode Figure 6. Typical Transient Thermal Impedance Per Diode Document Number: 88779 Revision: 18-Apr-08 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 3 MBR10H150CT, MBRF10H150CT & SB10H150CT-1 Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-220AB 0.055 (1.40) 0.047 (1.20) 0.398 (10.10) 0.382 (9.70) 0.343 (8.70) TYP. 0.150 (3.80) 0.139 (3.54) DIA. 0.114 (2.90) 0.106 (2.70) 0.154 (3.90) 0.138 (3.50) 0.331 (8.40) TYP. 0.638 (16.20) 0.598 (15.20) 0.634 (16.10) 0.618 (15.70) 1.161 (29.48) 1.106 (28.08) 0.102 (2.60) 0.087 (2.20) 0.370 (9.40) 0.354 (9.00) 0.185 (4.70) 0.169 (4.30) 0.055 (1.40) 0.049 (1.25) ITO-220AB 0.408 (10.36) 0.392 (9.96) 1.29 (3.28) DIA. 1.21 (3.08) 0.138 (3.50) 0.122 (3.10) 0.270 (6.88) 0.255 (6.48) 0.193 (4.90) 0.177 (4.50) 0.108 (2.74) 0.092 (2.34) 0.067 (1.70) TYP. 1 0.118 (3.00) TYP. PIN 23 0.630 (16.00) 0.614 (15.60) 1 PIN 2 0.264 (6.70) 0.248 (6.50) 0.320 (8.12) 0.304 (7.72) 0.633 (16.07) 0.601 (15.67) 3 0.117 (2.96) 0.101 (2.56) 0.523 (13.28) 0.507 (12.88) 0.035 (0.90) 0.028 (0.70) 0.100 (2.54) TYP. 0.064 (1.62) 0.056 (1.42) 0.200 (5.08) TYP. 0.396 (10.05) 0.372 (9.45) 0.024 (0.60) 0.018 (0.45) 0.039 (1.00) 0.024 (0.60) 0.100 (2.54) TYP. 0.058 (1.47) MAX. 0.200 (5.08) TYP. 0.024 (0.60) 0.018 (0.45) TO-262AA 0.398 (10.10) 0.382 (9.70) 0.055 (1.40) 0.039 (1.00) 0.185 (4.70) 0.169 (4.30) 0.055 (1.40) 0.049 (1.25) K 0.370 (9.40) 0.354 (9.00) 1 PIN 2 0.425 (10.80) 0.393 (10.00) 3 0.488 (12.4) 0.472 (12.00) 0.102 (2.60) 0.087 (2.20) 0.523 (13.28) 0.507 (12.88) 0.035 (0.90) 0.028 (0.70) 0.405 (10.28) 0.389 (9.88) 0.100 (2.54) TYP. 0.062 (1.57) 0.054 (1.37) 0.200 (5.08) TYP. 0.024 (0.60) 0.018 (0.45) www.vishay.com 4 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com Document Number: 88779 Revision: 18-Apr-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 |
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