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| QS043-402-2/5 94 Dimension:mm 99.00 94.50 4x 19.05= 76.20 CL 12.62 3.81 19.05 19 18 17 16 15 14 1 5 3 21 19 20 1 2 8 9 2 6 12 13 4-O5.5 7-M4 80 19.5 7 16 17 4x O 5.50 1 89 10 11 12 13 14 15 16 17 19.5 17.5 PMB100E6 3 5 6 7 4 21 12 34 56 78 9 10 11 12 13 13 17 5 6 8 18.5 18.5 18.5 18.5 12-fasten tab #110 3.81 15.24 8.01 110.00 121.50 15 9 10 4.5 10 4.5 10 4.5 10 4.5 10 4.5 10 4.5 25.5 PMB100E6C ollector-mitter oltage ate-mitter oltage ollector urrent ollector ower issipation unction emperature ange torage emperature ange (erminal to ase ,inute) solation oltage odule ase to eatsink ounting orque usbar to ain erminal LABEL 20.50 14 7 17.5 34 3 4 7 8 11 12 118.11 LABEL PMB100E6 13.00 7.00 PMB100E6C , 15.50 17.00 119.60 12.62 4 4x O2.10 39.00 57.50 74 86 18 19 61.50 58.42 50.00 40.20 19.05 3.81 CL 10 11 2 14 15 18 19 20 . (kgfcm) PMB100E6 . . . PDMB100E6 ise urn-on all urn-off ime ime ime ime = 600V, = 0V = 20V,= 0V = 100A,= 15V = 5V,= 100mA = 10V,= 0V,= 1MH = = = = 300V 3.0 8.2 15V . . . . 5,000 . . . . . . . . . . . . . ollector-mitter ut-ff urrent ate-mitter eakage urrent ollector-mitter aturation oltage ate-mitter hreshold oltage nput apacitance witching ime orward urrent eak orward oltage everse ecovery ime = 100A,= 0V = 100A,= -10V i/t= 200A/s . . . . . . . hermal mpedance iode th(j-c) Junction to Case Tc . . . . . 00 QS043-402-3/5 Fig.1- Output Characteristics (Typical) 200 Fig.2- Output Characteristics (Typical) TC=25C 200 TC=125C VGE=20V 12V VGE=20V 180 160 12V 11V 180 160 15V 15V 11V Collector Current I C (A) 140 120 100 80 60 40 20 0 0 1 2 3 4 Collector Current I C (A) 140 120 100 80 60 40 10V 10V 9V 9V 8V 8V 20 5 0 0 1 2 3 4 5 Collector to Emitter Voltage VCE (V) Collector to Emitter Voltage VCE (V) Fig.3- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical) 16 14 12 10 8 6 4 2 0 Fig.4- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical) TC=25C 16 14 12 10 8 6 4 2 0 TC=125C IC=50A 100A 200A IC=50A 100A 200A Collector to Emitter Voltage V CE (V) 0 4 8 12 16 20 Collector to Emitter Voltage V CE (V) 0 4 8 12 16 20 Gate to Emitter Voltage VGE (V) Gate to Emitter Voltage VGE (V) Fig.5- Gate Charge vs. Collector to Emitter Voltage (Typical) 400 350 Fig.6- Capacitance vs. Collector to Emitter Voltage (Typical) 16 14 10000 30000 RL=3.0 TC=25C Collector to Emitter Voltage V CE (V) VGE=0V f=1MHZ TC=25C Cies Gate to Emitter Voltage VGE (V) 300 250 200 150 100 50 0 12 10 Capacitance C (pF) 3000 VCE=300V 200V 100V 8 6 4 2 0 400 Coes 1000 Cres 300 0 100 200 300 100 0.1 0.2 0.5 1 2 5 10 20 50 100 200 Total Gate Charge Qg (nC) Collector to Emitter Voltage VCE (V) 00 QS043-402-4/5 Fig.7- Collector Current vs. Switching Time (Typical) 1 Fig.8- Series Gate Impedance vs. Switching Time (Typical) 10 5 0.8 tOFF VCC=300V RG=8.2 VGE=15V TC=25C Resistive Load 2 VCC=300V IC=100A VGE=15V TC=25C Resistive Load Switching Time t (s) Switching Time t (s) 0.6 1 0.5 tf 0.4 toff ton tr(V CE) tf 0.2 0.1 0.05 0.2 tON tr(VCE) 0 0 25 50 75 100 125 150 0.02 3 10 30 100 Collector Current IC (A) Series Gate Impedance RG ( ) Fig.9- Collector Current vs. Switching Time 10 Fig.10- Series Gate Impedance vs. Switching Time 10 5 1 Switching Time t (s) Switching Time t (s) tOFF tON tf tr(Ic) VCC=300V RG=8.2 VGE=15V TC=125C Inductive Load 2 1 0.5 VCC=300V IC=100A VGE=15V TC=125C Inductive Load 0.1 toff ton tf tr(IC ) 0.2 0.1 0.05 0.01 0.001 0 25 50 75 100 125 150 0.02 3 10 30 100 300 Collector Current IC (A) Series Gate Impedance RG ( ) Fig.11- Collector Current vs. Switching Loss 8 300 Fig.12- Series Gate Impedance vs. Switching Loss VCC=300V IC=100A VGE=15V TC=125C Inductive Load Switching Loss ESW (mJ/Pulse) 6 EOFF Switching Loss ESW (mJ/Pulse) VCC=300V RG=8.2 VGE=15V TC=125C Inductive Load 100 30 EON EOFF ERR 4 EON ERR 10 3 2 1 0 0 25 50 75 100 125 150 0.3 3 10 30 100 Collector Current IC (A) Series Gate Impedance RG ( ) 00 QS043-402-5/5 200 Fig.13- Forward Characteristics of Free Wheeling Diode (Typical) TC=25C TC=125C Fig.14- Reverse Recovery Characteristics (Typical) 1000 Peak Reverse Recovery Current I RrM (A) Reverse Recovery Time trr (ns) 500 160 trr 200 100 50 IF=100A TC=25C TC=125C Forward Current I F (A) 120 80 20 10 5 IRrM 40 0 0 1 2 3 4 2 0 100 200 300 400 500 600 Forward Voltage VF (V) -di/dt (A/s) Fig.15- Reverse Bias Safe Operating Area 500 200 100 RG=8.2 , VGE=15V, TC<125C Collector Current I C (A) 50 20 10 5 2 1 0.5 0.2 0.1 0 200 400 600 800 Collector to Emitter Voltage V CE (V) Fig.16- Transient Thermal Impedance 3 Transient Thermal Impedance Rth (J-C) (C/W) 1 FRD IGBT 3x10 -1 1x10 -1 3x10 -2 1x10 -2 3x10 -3 1x10 -3 10 -5 TC=25C 1 Shot Pulse 10 -4 10 -3 10 -2 10 -1 1 10 1 Time t (s) 00 |
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