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LL916, LL916A, LL916B
HIGH CONDUCTANCE FAST DIODES
Absolute Maximum Ratings (Ta = 25oC)
Symbol Working Inverse Voltage Average Rectified Current DC Forward Current Recurrent Peak Forward Current Peak Forward Surge Current Pulse width = 1 second Pulse width = 1 microsecond Total Device Dissipation o Derate above 25 C Thermal Resistance, Junction to Ambient Junction Temperature Storage Temperature Range WIV IO IF if Value 75 200 300 400 Unit V mA mA mA
if(surge) if(surge) PD RJA Tj TS
1 4 500 3.33 300 175 -65 to +200
A A mW o mW/ C
o
C/W
O
C C
O
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
(R)
Dated : 13/04/2002
LL916, LL916A, LL916B
Characteristics at TA = 25oC
Symbol Breakdown Voltage at IR = 100A at IR = 5A Reverse Current at VR = 20V at VR = 20V, TA = 150 C at VR = 75V Forward Voltage at IF = 5mA at IF = 10mA at IF = 20mA at IF = 30mA Diode Capacitance at f = 1MHz Reverse Recovery Time at IF = 10mA, VR = 6V(60mA), IRR = 1.0mA, RL = 100 LL916B LL916 LL916A LL916B VF VF VF VF 630 730 1 1 1 mV V V V
o
Min.
Typ.
Max.
Unit
BV BV
100 75
-
-
V V
IR IR IR
-
-
25 50 5
nA A A
CO
trr
-
-
2
pF
-
-
4
ns
Notes:(1) These ratings are based on a maximum junction temperature of 200 degrees C. (2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
(R)
Dated : 13/04/2002
LL916, LL916A, LL916B
Typical Characteristics
REVERSE VOLTAGE vs REVERSE CURRENT BV-1.0 to 100 uA
VR-REVERSE VOLTAGE (V) I R-REVERSE CURRENT(nA)
REVERSE CURRENT vs REVERSE VOLTAGE I R-10 to 100 V
120 100 80 60 40 20 0 10 20 30 50 70 100 Ta=25 C
o
160 150 140 130 120 110 1 2
Ta=25 C
o
3
5
10
20
30
50
100 VR-REVERSE VOLTAGE (V) GENERAL RULE:The Reverse Current of a diode will approximately double for every ten (10) Degree C increase in Temperature
I R-REVERSE CURRENT (uA)
FORWARD VOLTAGE vs FORWARD CURRENT VF-1 to 100 uA
550 Ta=25 C 500 450 400 350 300 250 1 2 3 5 10 20 30 50 100 I F-FORWARD CURRENT (uA)
VF-FORWARD VOLTAGE (mV) VF-FORWARD VOLTAGE (mV)
o
FORWARD VOLTAGE vs FORWARD CURRENT VF-0.1 to 100 mA
750 Ta=25 C 700 650 600 550 500 450 0.1 0.2 0.3 0.5 1 2 3 5 10 I F-FORWARD CURRENT (mA)
o
FORWARD VOLTAGE vs FORWARD CURRENT VF-10 to 800 mA
Ta=25 C 1.4 1.2 1 0.8 0.6 10 20 30 50 100 200 300 500
o
FORWARD VOLTAGE vs AMBIENT TEMPERATURE VF-0.01 - 20 mA (-40 to+65 Deg C)
VF-FORWARD VOLTAGE (V)
VF-FORWARD VOLTAGE (V)
1.6
900 800 700 600 500 400 300 0.01 0.03 0.1 0.3 1 3 10 Ta=+65 C
o
Typical Ta=-40 C
o o
Ta=+25 C
I F-FORWARD CURRENT (mA)
I F-FORWARD CURRENT (mA)
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
(R)
Dated : 13/04/2002
LL916, LL916A, LL916B
Typical Characteristics
CAPACITANCE vs REVERSE VOLTAGE VR=0.0 to 15 V
Ta=25 C
CAPACITANCE (pF)
o
REVERSE RECOVERY TIME vs REVERSE CURRENT
REVERSE RECOVERY (nS)
0.9
4 3.5 3 2.5 2 1.5 1 10 20 30 40 50 60 Ta=25 C
o
0.85
0.8
0.75 0
2
4
6
8
10
12
14
REVERSE VOLTAGE (V)
REVERSE CURRENT (mA) I F=10mA-IRR=1.0mA-Rloop=100 Ohms
PD-POWER DISSIPATION (mW)
Average Rectified Current (Io) & Forward Current (I F) versus Ambient Temperature (TA)
500 400
I-CURRENT (mA)
IR -F OR W AR
POWER DERATING CURVE
500 DO-35 400
D
300 200 100 0 0
I O-A
CU R
VER
RE
AGE
NT
300 SOT-23 200
REC T
IFIE
ST EA
DC ST URR A ENT -mA TE-m
DY
A
100
50
100
150 0 0 50 100 150
o
150
TA-AMBIENT TEMPERATURE ( C)
o
I O-AVERAGE TEMPERATURE ( C)
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
(R)
Dated : 13/04/2002

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