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| ST 2SC2786 NPN Silicon Epitaxial Planar Transistor for FM RF amplifier and local oscillator of FM tuner. The transistor is subdivided into three groups M, L, and K, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. Features 1) High gain bandwidth product 2) Small output capacitance 3) Low noise figure TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta = 25) Symbol Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature Range VCBO VCEO VEBO IC IB Ptot Tj TS Value 30 20 4 20 20 250 150 -55 to +150 Unit V V V mA mA mW O O C C SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) (R) Dated : 17/05/2003 ST 2SC2786 Characteristics at Tamb=25 OC Symbol DC Current Gain at VCE=6V, IC=1mA Current Gain Group M L K Collector Cutoff Current at VCB=30V Emitter Cutoff Current at VEB=4V Base Emitter Voltage at VCE=6V, IC=1mA Collector Saturation Voltage at IC=10mA, IB=1mA Gain Bandwidth Product at VCE=6V, IE=-1mA Power Gain at VCE=6V, IE=-1mA at f=100MHz, RG=50 Collector Base Time Constant at VCE=6V, IE=-1mA, f=31.9MHz Output Capacitance at VCB=6V, f=1MHz Noise Figure at VCE=6V, IE=-1mA at f=100MHz, RG=50 NF 3.0 5 dB Gpe 18 22 dB hFE hFE hFE ICBO IEBO VBE VCE(sat) fT 40 60 90 400 0.72 0.1 600 80 120 180 0.1 0.1 0.3 A A V V MHz Min. Typ. Max. Unit CCrb'b COB - 12 1 15 1.3 Ps pF SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) (R) Dated : 17/05/2003 ST 2SC2786 Total power dissipation vs. ambient temperature 300 Total power dissipation, mW Collector current vs. collector emitter voltage 10 8 80 70 6 4 Collector current vs. base emitter voltage 50 20 10 5 In free air 250 200 VCE=6V Ic (mA) 150 100 50 40 30 2 20 IB=10 A 0 I C, mA 12 16 20 60 2 1 0.5 0.2 0.1 0 0.2 0.4 0.6 0.8 1 1.2 50 0 4 8 25 50 75 100 125 150 Ambient temperature ( C) VCE (V) VBE,V DC CURRENT GAIN vs. COLLECTOR CURRENT VCE= 6V DC current gain vs. collector emitter voltage IC=1mA Gain bandwidth product vs. emitter current VCE= 6V 500 h FE - DC Current Gain 200 200 hFE fT, MHz 100 50 20 10 0.1 0.2 0.5 1 2 5 10 20 100 50 20 10 1000 500 200 100 -0.1 -1 -10 -20 -100 1 I C, mA 2 5 10 20 VCE, V 50 I E, mA Base collector saturation volage vs. collector current IC/IB=10 Imput capacitance vs. emitter base voltage Output capacitance vs. collector base voltage f=1MHz Collector base time constant vs. emitter current 100 VCB= 6V f=31.9MHz VBE(sat), V VCE(sat), V Cob, pF Cib, pF Cib(Ic=0) Cob(IE=0) Cc rb'b, ps 1 VBE(sat) 3 2 1 0.5 0.2 10 0.1 VCE(sat) 0.01 0.1 1 10 20 0.1 1 10 100 1 -0.1 -0.3 -1 -3 -10 -20 I C, mA VCB, V VEB, V I E, mA SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) (R) Dated : 17/05/2003 ST 2SC2786 Forward transfer amittance vs. collector current 500 100 gfe, mS bfe, mS g fe 10.7MHz VCE=6V output short Reverse transfer admittance vs. collector current 0 0.1 gre, mS bre, mS -gre -gre -bre 10.7MHz 10.7MHz 100 MHz Input admittance vs. collector current 100 VCE=6V output short -bfe 100MHz g fe 100MHz 10 VCE=6V input short bie gie 100 MHz 0.2 0.3 0.4 gie, mS bie, mS 1 10 -bre 100 MHz 10.7MHz 0.1 bie gie -bfe 10.7MHz 0.5 10 20 0.1 1 0.2 1 0.01 1 10 0.1 1 10 20 I C, mA I C, mA I C, mA Reverse transfer amittance vs. collector current 1 -brb 100MHz VCB=6V input short Input amittance vs. collector current VCB=6V output short g ib 10.7MHz Output amittance vs. collector current 1 boe 100MHz VCE=6V input short goe 100MHz 0.5 0.2 0.1 0.05 0.02 0.01 0.1 1 -g rb 100MHz -grb 10.7MHz 500 100 gib, mS bib, mS 0.5 goe, mS boe, mS g ib 100MHz grb, mS brb, mS 0.2 0.1 0.05 0.02 goe 10.7MHz boe 10.7MHz -brb 10.7MHz -bib 10.7MHz 10 -bib 100MHz 10 100 1 0.2 1 10 20 0.01 I C, mA 0.1 1 10 100 I C, mA I C, mA Reverse transfer amittance vs. frequency VCE=6V IC=1mA input short 1 Input amittance vs. frequency VCE=6V IC=1mA input short Forward transfer amittance vs. collector current 500 -g fb 100MHz VCB=6V output short -g fb 10.7MHz 10 100 gfb, mS bfb, mS gre, mS bre, mS gie, mS bie, mS 0.5 0.2 0.1 0.05 0.02 10 20 50 100 200 -bre 5 2 1 0.5 0.2 10 20 50 100 200 bie g ie b fb bfb 10.7MHz -g re 10 100MHz 1 0.2 1 10 20 f, MHz f, MHz I C, mA SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) (R) Dated : 17/05/2003 ST 2SC2786 Forward transfer amittance vs. frequency VCE=6V IC=1mA output short 2 100 gfe 1 Output amittance vs. frequency VCE=6V IC=1mA input short boe Power gain, noise figure vs. emitter current 25 20 Gpe, dB Gpe VCE=6V f=100MHz test circuit 15 10 5 0 12 goe, mS boe, mS gfe, mS bfe, mS 20 10 5 2 10 20 50 100 200 bfe 0.2 0.1 0.05 0.02 10 20 50 100 200 goe 8 NF 4 -0.1 -1 -10 0 f, MHz f, MHz I E, mA SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) (R) Dated : 17/05/2003 NF, dB 50 0.5 |
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