Part Number Hot Search : 
20N36 V8069QCL 1N473 HY57V16 IRF9Z32 00002 TD62604P 000AKCY
Product Description
Full Text Search
 

To Download MMST5551 Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
 SEMICONDUCTOR
TECHNICAL SPECIFICATION
RECTRON
MMST5551
SOT-323 BIPOLAR TRANSISTORS
TRANSISTOR (NPN)
FEATURES
* Power dissipation O Pcm: 0.2 W (Tamb=25 C) * Collector current Icm: 0.2 A * Collector-base voltage V(BR)CBO: 160 V * Operationg and storage junction temperature range O O TJ,Tstg: -55 Cto +150 C
SOT-323
MECHANICAL DATA
* * * * * Case: Molded plastic Epoxy: UL 94V-O rate flame retardant Lead: MIL-STD-202E method 208C guaranteed Mounting position: Any Weight: 0.006 gram
0.051(1.30) 0.047(1.20)
REF .040(1.01)
0.092(2.35) 0.089(2.25) 0.012(0.30)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 o C ambient temperature unless otherwise specified.
0.052(1.33) 0.050(1.27)
0.081(2.05) 0.077(1.95)
Dimensions in inches and (millimeters) MAXIMUM RATINGES ( @ TA = 25 C unless otherwise noted ) RATINGS Zener Current ( see Table "Characteristics" ) Max. Steady State Power Dissipation Max. Operating Temperature Range Storage Temperature Range SYMBOL PD TJ TSTG VALUE 200 150 -55 to +150 UNITS mW
o o o
C C
ELECTRICAL CHARACTERISTICS ( @ TA = 25oC unless otherwise noted ) CHARACTERISTICS Thermal Resistance Junction to Ambient Max. Instantaneous Forward Voltage at IF= 10mA SYMBOL R JA VF MIN. TYP. MAX. 625 UNITS
o
C/W
Volts 2006-3
ELECTRICAL CHARACTERISTICS (@TA=25OC unless otherwise noted) Chatacteristic OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (I C = 1.0mAdc, I B = 0) Collector-Base Breakdown Voltage (I C = 100Adc, I E = 0) Emitter-Base Breakdown Voltage (I E = 10Adc, I C = 0) Collector Cutoff Current (V CB = 120Vdc, I E = 0) Emitter Cutoff Current (V EB = 3Vdc, I C = 0) V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO 160 180 5 50 50 Vdc Vdc Vdc nAdc nAdc
Symbol
Min
Max
Unit
ON CHARACTERISTICS
DC Current Gain (I C = 1mAdc, V CE = 5Vdc) (I C = -10mAdc, V CE = 5Vdc) (I C = 50mAdc, V CE = 5Vdc) Collector-Emitter Saturation Voltage (I C = 10mAdc, I B = 1mAdc) (I C = 50mAdc, I B = 5mAdc) Base-Emitter Saturation Voltage (I C = 10mAdc, I B = 1mAdc) (I C = 50mAdc, I B = 5mAdc) VCE(sat) hFE 80 80 30 VBE(sat) 250 0.15 Vdc 0.2 1 1 Vdc -
SMALL-SIGNAL CHARACTERISTICS
Current-Gain-Bandwidth Product (I C = 10mAdc, V CE = 10Vdc, f= 100MHz) Output Capacitance (V CB = 10Vdc, I E = 0, f= 1.0MHz) Noise figure (I C = 0.2mAdc, V CE = 5Vdc, f= 1.0kHz,Rg=10) fT Cob NF 100 300 6 8 MHz pF dB
RECTRON


▲Up To Search▲   

 
Price & Availability of MMST5551

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X