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| SEMICONDUCTOR TECHNICAL SPECIFICATION RECTRON MMST5401 SOT-323 BIPOLAR TRANSISTORS TRANSISTOR (PNP) FEATURES * Power dissipation O Pcm: 0.2 W (Tamb=25 C) * Collector current Icm: -0.2 A * Collector-base voltage V(BR)CBO: -160 V * Operationg and storage junction temperature range O O TJ,Tstg: -55 Cto +150 C SOT-323 MECHANICAL DATA * * * * * Case: Molded plastic Epoxy: UL 94V-O rate flame retardant Lead: MIL-STD-202E method 208C guaranteed Mounting position: Any Weight: 0.006 gram 0.051(1.30) 0.047(1.20) REF .040(1.01) 0.092(2.35) 0.089(2.25) 0.012(0.30) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 o C ambient temperature unless otherwise specified. 0.052(1.33) 0.050(1.27) 0.081(2.05) 0.077(1.95) Dimensions in inches and (millimeters) MAXIMUM RATINGES ( @ TA = 25 C unless otherwise noted ) RATINGS Zener Current ( see Table "Characteristics" ) Max. Steady State Power Dissipation (1) Max. Operating Temperature Range Storage Temperature Range SYMBOL PD TJ TSTG VALUE 200 150 -55 to +150 UNITS mW o o o C C ELECTRICAL CHARACTERISTICS ( @ TA = 25oC unless otherwise noted ) CHARACTERISTICS Thermal Resistance Junction to Ambient (1) Max. Instantaneous Forward Voltage at IF= 10mA SYMBOL R JA VF MIN. TYP. MAX. 625 UNITS o C/W Volts 2006-3 NOTES : 1. Valid provided that terminals are kept at ambient temperature. ELECTRICAL CHARACTERISTICS (@TA=25OC unless otherwise noted) Chatacteristic OFF CHARACTERISTICS (2) Collector-Emitter Breakdown Voltage (I C = -1.0mAdc, I B = 0) Collector-Base Breakdown Voltage (I C = -100Adc, I E = 0) Emitter-Base Breakdown Voltage (I E = -10Adc, I C = 0) Collector Cutoff Current (V CB = -120Vdc, I E = 0) Emitter Cutoff Current (V EB = -3.0Vdc, I C = 0) V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO -150 -160 -5 -50 -50 Vdc Vdc Vdc nAdc nAdc Symbol Min Max Unit ON CHARACTERISTICS (2) DC Current Gain (I C = -1mAdc, V CE = -5Vdc) (I C = -10mAdc, V CE = -5Vdc) (I C = -50mAdc, V CE = -5Vdc) Collector-Emitter Saturation Voltage (I C = -10mAdc, I B = -1mAdc) (I C = -50mAdc, I B = -5mAdc) Base-Emitter Saturation Voltage (I C = -10mAdc, I B = -1mAdc) (I C = -50mAdc, I B = -5mAdc) VCE(sat) hFE 50 60 50 VBE(sat) 240 -0.2 Vdc -0.5 -1 -1 Vdc - SMALL-SIGNAL CHARACTERISTICS Current-Gain-Bandwidth Product (I C = -10mAdc, V CE = -10Vdc, f= 100MHz) Output Capacitance (V CB = -10Vdc, I E = 0, f= 1.0MHz) Small-Signal Current Gain (I C = -1.0mAdc, V CE = -10Vdc, f= 1.0kHz) Noise figure (I C = -0.2mAdc, V CE = -5Vdc, f= 1.0kHz,Rg=10) < < NOTES : 2. Pulse Test: Pulse Width-300s,Duty Cycle-2.0% fT Cob hfe NF 100 40 300 6 200 8 MHz pF dB RECTRON |
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