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PD - 97336 IRFH7914PBF Applications l l HEXFET(R) Power MOSFET Control MOSFET of Sync-Buck Converters used for Notebook Processor Power Control MOSFET for Isolated DC-DC Converters in Networking Systems VDSS 30V RDS(on) max Qg 8.7m@VGS = 10V 8.3nC Benefits l l l l l l l l Very low RDS(ON) at 4.5V VGS Low Gate Charge Fully Characterized Avalanche Voltage and Current 100% Tested for RG Lead-Free (Qualified up to 260C Reflow) RoHS compliant (Halogen Free) Low Thermal Resistance Large Source Lead for more reliable Soldering D D D D S S S G PQFN Absolute Maximum Ratings Parameter VDS VGS ID @ TA = 25C ID @ TA = 70C ID @ TC = 25C IDM PD @TA = 25C PD @TA = 70C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Max. 30 20 15 12 35 110 3.1 Units V g g c A W W/C C Linear Derating Factor Operating Junction and g 2.0 0.025 -55 to + 150 Storage Temperature Range Thermal Resistance Parameter RJC RJA Junction-to-Case f Typ. --- --- Max. 7.2 40 Units C/W Junction-to-Ambient g Notes through are on page 9 www.irf.com 07/15/08 1 IRFH7914PBF BVDSS VDSS/TJ RDS(on) VGS(th) VGS(th) IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss RG td(on) tr td(off) tf Ciss Coss Crss Static @ TJ = 25C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Output Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. Typ. Max. Units 30 --- --- --- 1.35 --- --- --- --- --- 77 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- 0.022 7.5 11.2 1.8 -6.08 --- --- --- --- --- 8.3 2.1 1.0 2.8 2.4 3.8 4.8 1.3 11 11 12 4.6 1160 220 100 --- --- 8.7 13 2.35 --- 1.0 150 100 -100 --- 12 --- --- --- --- --- --- 2.2 --- --- --- --- --- --- --- pF nC nC VDS = 15V VGS = 4.5V ID = 11A V Conditions VGS = 0V, ID = 250A VGS = 10V, ID = 14A VGS = 4.5V, ID = 11A V/C Reference to 25C, ID = 1mA m V mV/C A nA S e e VDS = VGS, ID = 25A VDS = 24V, VGS = 0V VDS = 24V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VDS = 15V, ID = 11A See Fig.17 & 18 VDS = 16V, VGS = 0V VDD = 15V, VGS = 4.5V ns ID = 11A RG=1.8 See Fig.15 VGS = 0V VDS = 15V = 1.0MHz Avalanche Characteristics EAS IAR Parameter Single Pulse Avalanche Energy Avalanche Current d Typ. --- --- Max. 17 11 Units mJ A Diode Characteristics Parameter IS ISM VSD trr Qrr ton Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)A Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min. Typ. Max. Units --- --- --- --- --- --- --- --- 14 9.5 3.9 A 110 1.0 21 14 V ns nC Conditions MOSFET symbol showing the integral reverse G S D p-n junction diode. TJ = 25C, IS = 11A, VGS = 0V TJ = 25C, IF = 11A, VDD = 15V di/dt = 200A/s e eA Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) 2 www.irf.com IRFH7914PBF 1000 1000 60s PULSE WIDTH Tj = 25C ID, Drain-to-Source Current (A) TOP 100 BOTTOM ID, Drain-to-Source Current (A) VGS 10V 5.0V 4.5V 3.5V 3.0V 2.7V 2.5V 2.3V 60s PULSE WIDTH Tj = 150C 100 TOP BOTTOM VGS 10V 5.0V 4.5V 3.5V 3.0V 2.7V 2.5V 2.3V 10 10 1 2.3V 0.1 0.1 1 10 100 V DS, Drain-to-Source Voltage (V) 1 2.3V 0.1 0.1 1 10 100 V DS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 RDS(on) , Drain-to-Source On Resistance 2.0 ID = 14A VGS = 10V ID, Drain-to-Source Current (A) 100 1.5 (Normalized) 10 TJ = 150C T J = 25C 1.0 1 VDS = 15V 60s PULSE WIDTH 1 2 3 4 5 6 0.1 0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 VGS , Gate-to-Source Voltage (V) T J , Junction Temperature (C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance vs. Temperature www.irf.com 3 IRFH7914PBF 10000 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, C ds SHORTED Crss = Cgd 14.0 ID= 11A VGS , Gate-to-Source Voltage (V) 12.0 10.0 8.0 6.0 4.0 2.0 0.0 VDS= 24V VDS= 15V C, Capacitance (pF) 1000 Ciss Coss = Cds + Cgd Coss Crss 100 10 1 10 VDS, Drain-to-Source Voltage (V) 100 0 2 4 6 8 10 12 14 16 18 20 22 Q G , Total Gate Charge (nC) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage 1000 1000 OPERATION IN THIS AREA LIMITED BY R DS(on) 100 T J = 150C 10 T J = 25C 1 VGS = 0V 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VSD, Source-to-Drain Voltage (V) ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 100 100sec 1msec 10 DC 10msec 1 T A = 25C Tj = 150C Single Pulse 0.1 0 1 10 100 VDS, Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRFH7914PBF 16 VGS(th) , Gate Threshold Voltage (V) 2.5 14 12 ID, Drain Current (A) 2.0 10 8 6 4 2 0 25 50 75 100 125 150 T A , Ambient Temperature (C) 1.5 ID = 25A 1.0 0.5 -75 -50 -25 0 25 50 75 100 125 150 T J , Temperature ( C ) Fig 9. Maximum Drain Current vs. Ambient Temperature Fig 10. Threshold Voltage vs. Temperature 100 Thermal Response ( Z thJA ) C/W D = 0.50 10 0.20 0.10 0.05 1 0.02 0.01 J J 1 1 R1 R1 2 R2 R2 R3 R3 3 R4 R4 A 2 3 4 4 A Ri (C/W) 2.0021 6.0077 15.5002 16.4970 0.000245 0.014521 0.7719 38.3 i (sec) Ci= i/Ri Ci= i/Ri 0.1 SINGLE PULSE ( THERMAL RESPONSE ) 1E-005 0.0001 0.001 0.01 0.1 1 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthja + T A 10 100 1000 0.01 1E-006 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 IRFH7914PBF RDS(on), Drain-to -Source On Resistance (m ) 25 EAS , Single Pulse Avalanche Energy (mJ) 80 ID = 14A 20 70 60 50 40 30 20 10 0 ID 3.1A 4.0A BOTTOM 11A TOP 15 T J = 125C 10 T J = 25C 5 0 2 4 6 8 10 12 14 16 18 20 25 50 75 100 125 150 VGS, Gate -to -Source Voltage (V) Starting T J , Junction Temperature (C) Fig 12. On-Resistance vs. Gate Voltage Fig 13. Maximum Avalanche Energy vs. Drain Current 15V V DS V GS RD VDS L DRIVER RG V10V GS Pulse Width 1 s Duty Factor 0.1 D.U.T. + -V DD RG 20V D.U.T IAS tp + V - DD A 0.01 Fig 14a. Unclamped Inductive Test Circuit V(BR)DSS tp Fig 15a. Switching Time Test Circuit 90% VDS 10% VGS I AS td(on) tr td(off) tf Fig 14b. Unclamped Inductive Waveforms Fig 15b. Switching Time Waveforms 6 www.irf.com IRFH7914PBF D.U.T Driver Gate Drive + P.W. Period D= P.W. Period VGS=10V + Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt - + RG * dv/dt controlled by RG * Driver same type as D.U.T. * I SD controlled by Duty Factor "D" * D.U.T. - Device Under Test V DD VDD + - Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple 5% ISD * VGS = 5V for Logic Level Devices Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET(R) Power MOSFETs Current Regulator Same Type as D.U.T. Vds Vgs Id 50K 12V .2F .3F D.U.T. VGS 3mA + V - DS Vgs(th) IG ID Qgs1 Qgs2 Qgd Qgodr Current Sampling Resistors Fig 17. Gate Charge Test Circuit Fig 18. Gate Charge Waveform www.irf.com 7 IRFH7914PBF PQFN Package Details PQFN Part Marking INTERNATIONAL RECTIFIER LOGO 6 DATE CODE ASSEMBLY SITE CODE (Per SCOP 200-002) XXXX XYWWX XXXXX PART NUMBER MARKING CODE (Per Marking Spec.) PIN 1 IDENTIFIER LOT CODE (Eng Mode - Min. last 4 digits of EATI #) (Prod Mode - 4 digits SPN code) TOP MARKING (LASER) Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 8 www.irf.com IRFH7914PBF PQFN Tape and Reel Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25C, L = 0.27mH, RG = 25, IAS = 11A. Pulse width 400s; duty cycle 2%. Rthjc is guaranteed by design When mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of FR-4 material. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.07/08 www.irf.com 9 |
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