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APTM100A23SCTG
Phase leg
Series & SiC parallel diodes
VDSS = 1000V RDSon = 230m typ @ Tj = 25C ID = 36A @ Tc = 25C
Application * Motor control * Switched Mode Power Supplies * Uninterruptible Power Supplies Features * Power MOS 7(R) MOSFETs Low RDSon Low input and Miller capacitance Low gate charge Avalanche energy rated * Parallel SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF Kelvin source for easy drive Very low stray inductance Symmetrical design Lead frames for power connections Internal thermistor for temperature monitoring High level of integration
MOSFET Power Module
NT C2 VBUS Q1
G1 OUT S1 Q2
G2
0/VBUS S2 NT C1
* * * *
OUT VBUS OUT
0/VBUS
S1 G1
S2 G2
NTC2 NTC1
Absolute maximum ratings
Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS
Benefits * Outstanding performance at high frequency operation * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Solderable terminals both for power and signal for easy PCB mounting * Low profile * RoHS Compliant Max ratings 1000 36 27 144 30 270 694 18 50 2500 Unit V A V m W A mJ
July, 2006 1-7 APTM100A23SCTG - Rev 2
Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25C Tc = 80C
Tc = 25C
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
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APTM100A23SCTG
All ratings @ Tj = 25C unless otherwise specified
Symbol Characteristic IDSS RDS(on) VGS(th) IGSS
Electrical Characteristics
Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current
Test Conditions
VGS = 0V,VDS= 1000V VGS = 0V,VDS= 800V
Tj = 25C Tj = 125C
Min
Typ
VGS = 10V, ID = 18A VGS = VDS, ID = 5mA VGS = 30 V, VDS = 0V
230 3
Max 200 1000 270 5 150
Unit A m V nA
Dynamic Characteristics
Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Source Charge Gate - Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy
Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 500V ID = 36A Inductive switching @ 125C VGS = 15V VBus = 667V ID = 36A R G = 2.5 Inductive switching @ 25C VGS = 15V, VBus = 667V ID = 36A, R G = 2.5 Inductive switching @ 125C VGS = 15V, VBus = 667V ID = 36A, R G = 2.5
Min
Typ 8700 1430 240 308 52 194 10 12 121 35 767 760 1255 902
Max
Unit pF
nC
ns
J
J
Series diode ratings and characteristics
Symbol Characteristic Test Conditions VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage IF = 60A IF = 120A IF = 60A IF = 60A VR = 133V di/dt = 400A/s VR=200V Tj = 25C Tj = 125C Tc = 85C
Min 200
Typ
Max 350 600
Unit V A A
Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C
60 1.1 1.4 0.9 24 48 66 300
1.15 V
July, 2006 2-7 APTM100A23SCTG - Rev 2
trr Qrr
Reverse Recovery Time Reverse Recovery Charge
ns nC
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APTM100A23SCTG
Parallel SiC diode ratings and characteristics
Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF QC Q Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Total Capacitive Charge Total Capacitance Test Conditions VR=1200V Min 1200 Typ 200 400 20 1.6 2.6 56 180 132 Min Transistor Series diode 2500 -40 -40 -40 2.5 Typ Max 0.18 0.65 0.8 150 125 100 4.7 160 Typ 50 3952 Max Max 800 4000 1.8 3.0 Unit V A A V nC pF
Tj = 25C Tj = 150C Tc = 125C Tj = 25C IF = 20A Tj = 175C IF = 20A, VR = 600V di/dt =1200A/s f = 1MHz, VR = 200V f = 1MHz, VR = 400V
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance
Unit
C/W
Parallel diode RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
V C N.m g Unit k K
Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight
To Heatsink
M5
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol Characteristic R25 Resistance @ 25C B 25/85 T25 = 298.15 K Min
RT =
R 25
SP4 Package outline (dimensions in mm)
1 1 RT : Thermistor value at T exp B 25 / 85 T - T 25
T: Thermistor temperature
ALL D IMENSION S MARKED " * " ARE TOLERENCED AS :
See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com
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3-7
APTM100A23SCTG - Rev 2
July, 2006
APTM100A23SCTG
Typical MOSFET Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.2 0.18 0.9 0.16 0.7 0.14 0.12 0.5 0.1 0.08 0.3 0.06 0.04 0.1 Single Pulse 0.02 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics 120 I D, Drain Current (A) ID, Drain Current (A) 100 80 60 40 20 0 0 5 10 15 20 25 VDS, Drain to Source Voltage (V) RDS(on) vs Drain Current ID, DC Drain Current (A)
Normalized to VGS =10V @ 18A V GS=10V 5.5V 5V V GS=15&8V 7V 6.5V 6V
Thermal Impedance (C/W)
10
Transfert Characteristics 160 140 120 100 80 60 40 20 0 30 0 1 2 3 4 5 6
T J=25C TJ=125C T J=-55C
VDS > I D(on)xRDS(on)MAX 250s pulse test @ < 0.5 duty cycle
7
8
9 10
VGS, Gate to Source Voltage (V) DC Drain Current vs Case Temperature 40 35 30 25 20 15 10 5 0 25 50 75 100 125 150
July, 2006 4-7 APTM100A23SCTG - Rev 2
RDS(on) Drain to Source ON Resistance
1.4 1.3 1.2 1.1 1 0.9 0.8 0
VGS =20V
20
40
60
80
100
ID, Drain Current (A)
TC, Case Temperature (C)
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APTM100A23SCTG
RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) I D, Drain Current (A) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (C) Capacitance vs Drain to Source Voltage VGS, Gate to Source Voltage (V) 100000 C, Capacitance (pF) Ciss Coss 1000 Crss 100 14 12 10 8 6 4 2 0 0 50 100 150 200 250 300 350 400 Gate Charge (nC)
July, 2006
ON resistance vs Temperature 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Maximum Safe Operating Area
VGS =10V ID=18A
1000
100s
100
limited by RDSon 1ms
10
Single pulse TJ =150C TC=25C 1
10ms
1 10 100 1000 VDS , Drain to Source Voltage (V)
Gate Charge vs Gate to Source Voltage ID=36A TJ=25C
VDS=200V V DS =500V VDS=800V
10000
10 0 10 20 30 40 50 VDS, Drain to Source Voltage (V)
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5-7
APTM100A23SCTG - Rev 2
APTM100A23SCTG
Delay Times vs Current 160 140 td(on) and td(off) (ns) 120 100 80 60 40 20 0 10 20 30 40 50 60 70 80 ID, Drain Current (A) Switching Energy vs Current t d(on) 10 0 10 20 30 40 50 60 I D, Drain Current (A) 70 80
V DS=667V RG =2.5 T J=125C L=100H
Rise and Fall times vs Current 60
VDS=667V RG=2.5 TJ=125C L=100H
td(off) tr and tf (ns)
50 40 30 20
tf
tr
Switching Energy vs Gate Resistance 5 Switching Energy (mJ)
VDS=667V ID=36A T J=125C L=100H
2.5
Switching Energy (mJ)
2 1.5 1 0.5 0 10
V DS =667V RG =2.5 T J=125C L=100H
Eon Eoff
Eoff
4 3 2 1 0
Eon Eoff
20
30
40
50
60
70
80
0
3
5
8
10
13
15
I D, Drain Current (A) Operating Frequency vs Drain Current
VDS=667V D=50% RG=2.5 T J=125C T C=75C
Gate Resistance (Ohms) Source to Drain Diode Forward Voltage I DR, Reverse Drain Current (A) 1000
300 250 Frequency (kHz) 200 150 100 50 0 14 18 22 26 30 I D, Drain Current (A) 34
Hard switching ZCS ZVS
100
TJ=150C T J=25C
10
1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
July, 2006
VSD, Source to Drain Voltage (V)
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6-7
APTM100A23SCTG - Rev 2
APTM100A23SCTG
Typical SiC Diode Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.9 Thermal Impedance (C/W) 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.3 0.1 0.05 0.0001 0.001 Single Pulse 0.7 0.5 0.9
0 0.00001
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds) Forward Characteristics
TJ=25C
Reverse Characteristics
40
I F Forward Current (A)
800
IR Reverse Current (A)
30 20
TJ=75C
600 400 200 0 400
T J=125C
T J=75C T J=125C T J=175C T J=25C
10 0 0 0.5 1 1.5 2
TJ=175C
2.5
3
3.5
600
VF Forward Voltage (V) Capacitance vs.Reverse Voltage
800 1000 1200 1400 1600 VR Reverse Voltage (V)
1600 C, Capacitance (pF) 1200
800 400 0
July, 2006 7-7 APTM100A23SCTG - Rev 2
1
10 100 VR Reverse Voltage
1000
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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