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| APT40DR160HJ ISOTOP(R) Rectifier diode full bridge Power Module VRRM = 1600V IF = 40A @ Tc = 80C Application * Input mains rectifier Features * * * * * * * Planar double passivated chips High blocking voltage High current Low leakage current Very low stray inductance High level of integration ISOTOP(R) Package (SOT-227) ~ ~ - + Benefits * * * * * * Outstanding performance at high frequency operation Low losses Low noise switching Direct mounting to heatsink (isolated package) Low junction to case thermal resistance RoHS Compliant Absolute maximum ratings Symbol VR VRRM IF IFSM Parameter Maximum DC reverse Voltage Maximum Peak Repetitive Reverse Voltage DC Forward Current Non-Repetitive Forward Surge Current Max ratings 1600 t=10ms TC = 80C TJ = 45C 40 400 Unit V APT40DR160HJ - Rev 0 November, 2009 A These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-3 APT40DR160HJ All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics Symbol Characteristic IR VF VT rT Reverse Current Forward Voltage On - state Voltage On - state Slope resistance Test Conditions VR = 1600V IF = 40A Tj = 25C Tj = 125C Tj = 25C Tj = 125C Min Typ 20 2 1.3 1.1 0.8 10.5 Max Unit A mA V V m Thermal and package characteristics Symbol RthJC RthJA VISOL TJ,TSTG TL Torque Wt Characteristic Junction to Case Thermal resistance Junction to Ambient RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Min Typ Max 1.5 20 150 300 1.5 Unit C/W V C N.m g Storage Temperature Range Max Lead Temp for Soldering:0.063" from case for 10 sec Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine) Package Weight 2500 -55 29.2 SOT-227 (ISOTOP(R)) Package Outline 31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places) r = 4.0 (.157) (2 places) 4.0 (.157) 4.2 (.165) (2 places) 0.75 (.030) 0.85 (.033) 25.2 (0.992) 25.4 (1.000) 3.30 (.130) 12.6 (.496) 4.57 (.180) 12.8 (.504) 3.3 (.129) 3.6 (.143) 14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504) 1.95 (.077) 2.14 (.084) Dimensions in Millimeters and (Inches) www.microsemi.com 2-3 APT40DR160HJ - Rev 0 November, 2009 APT40DR160HJ Typical Performance Curve Forward Characteristic 80 400 Non-Repetitive Forward Surge Current 60 IFSM (A) TJ=125C 300 TJ=125C TJ=45C IF (A) 40 200 20 TJ=25C 100 50Hz 80% VRRM 0 0.0 0.4 0.8 1.2 1.6 2.0 0 0.01 t (s) 0.1 VF (V) maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 1.6 Thermal Impedance (C/W) 1.4 1.2 1 0.8 0.6 0.4 0.2 0.1 Single Pulse 0.0001 0.001 0.01 0.1 1 10 0.05 0 0.00001 0.5 0.3 0.9 0.7 Rectangular Pulse Duration in Seconds ISOTOP(R) is a registered trademark of ST Microelectronics NV Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 3-3 APT40DR160HJ - Rev 0 November, 2009 |
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