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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD843 DESCRIPTION *High Collector Current:: IC= 7A *Low Collector Saturation Voltage : VCE(sat)= 0.5V(Max)@IC= 4A *High Collector Power Dissipation *Complement to Type 2SB753 APPLICATIONS *High current switching applications *Power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage w ww scs .i VALUE 100 80 5 7 1.5 UNIT .cn mi e V V V A IC Collector Current-Continuous Collector Power Dissipation @ Ta=25 PC Total Power Dissipation @ TC=25 TJ Junction Temperature 40 W 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL V(BR)CEO VCE(sat) VBE(sat) ICBO IEBO hFE-1 hFE-2 fT COB PARAMETER Collector-Emitter Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Current-Gain--Bandwidth Product Output Capacitance CONDITIONS IC= 50mA ; IB= 0 IC= 4A; IB= 0.4A B 2SD843 MIN 80 TYP. MAX UNIT V 0.5 1.4 5 5 70 30 240 V V A A IC= 4A; IB= 0.4A B VCB= 100V ; IE= 0 VEB= 5V; IC= 0 IC= 1A; VCE= 1V IC= 4A; VCE= 1V Switching times ton tstg tf Turn-on Time Storage Time Fall Time ww w scs .i IC= 1A ; VCE= 4V IE= 0; VCB= 10V; ftest= 1MHz .cn mi e 10 250 MHz pF 0.4 2.5 0.5 s s s RL= 10, VCC= 30V IB1= -IB2= 0.3A hFE-1 Classifications O 70-140 Y 120-240 isc Websitewww.iscsemi.cn 2 |
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