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 Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1297
DESCRIPTION With TO-3PN package High DC current gain Low saturation voltage APPLICATIONS For audio frequency power amplifier and low speed high current switching industrial use
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION
Absolute maximum ratings (Ta=25ae )
SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER

INC
Collector-base voltage
Collector-emitter voltage
E SEM ANG H
Open base
OND IC
CONDITIONS
TOR UC
MAX 150 100 8 25 50 1.5 UNIT V V V A A A
Open emitter
Emitter-base voltage Collector current Collector current-peak Base current
Open collector
TC=25ae PT Total power dissipation Ta=25ae Tj Tstg Junction temperature Storage temperature
100 W 3.0 150 -55~150 ae ae
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=30mA ;IB=0 IC=15A ;IB=30mA IC=15A ;IB=30mA VCB=100V; IE=0 VEB=5V; IC=0 IC=15A ; VCE=2V IC=25A ; VCE=2V 1000 250 MIN 100
2SD1297
SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2
TYP.
MAX
UNIT V
1.5 2.2 10 5 30000 |I
V V A mA
Switching times ton tstg tf
Fall time
Turn-on time Storage time

hFE-1 Classifications M 1000-3000 L 2000-5000 K 4000-10000 J 8000-30000
INC
E SEM ANG H
IC=15A; IB1=-IB2=30mA VCCO 60V;RL=4
OND IC
TOR UC
1.0 |I 5.0 2.0
s |I |I s s
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SD1297

CHA IN
E SEM NG
OND IC
TOR UC
Fig.2 outline dimensions
3


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