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| Product Specification www.jmnic.com Silicon PNP Power Transistors 2SB754 DESCRIPTION With TO-3P(I) package Complement to type 2SD844 High collector current :IC=-7A Low collector saturation voltage High power dissipation APPLICATIONS High current switching applications Power amplifier applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC IE PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Emitter current Ta=25ae PC Collector power dissipation TC=25ae Tj Tstg Junction temperature Storage temperature 60 150 -55~150 ae ae CONDITIONS Open emitter Open base Open collector VALUE -50 -50 -5 -7 7 2.5 W UNIT V V V A A Product Specification www.jmnic.com Silicon PNP Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Collector output capacitance CONDITIONS IC=-50mA ;IB=0 IE=-10mA; IC=0 IC=-4.0A; IB=-0.4A IC=-4A ; VCE=-1V VCB=-50V; IE=0 VEB=-5V; IC=0 IC=-1A ; VCE=-1V IC=-4A ; VCE=-1V IC=-1A ; VCE=-5V IE=0;f=1MHz ; VCB=-10V 70 30 10 300 MIN -50 -5 -0.2 -0.9 TYP. 2SB754 SYMBOL V(BR)CEO V(BR)EBO VCEsat VBE ICBO IEBO hFE-1 hFE-2 fT COB MAX UNIT V V -0.4 -1.2 -10 -10 240 |I |I V V A A MHz pF hFE-1 Classifications O 70-140 Y 120-240 2 Product Specification www.jmnic.com Silicon PNP Power Transistors PACKAGE OUTLINE 2SB754 Fig.2 Outline dimensions (unindicated tolerance: A 0.10 mm) 3 Product Specification www.jmnic.com Silicon Power Transistors 2SB754 4 |
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