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| BZX85-Series Vishay Semiconductors Zener Diodes Features * Silicon Planar Power Zener Diodes * For use in stabilizing and clipping circuits e2 with high power rating * The Zener voltages are graded according to the international E 24 standard. Replace suffix "C" with "B" for 2 % tolerance * Lead (Pb)-free component * Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 17173 Applications * Voltage stabilization Mechanical Data Case: DO41 Glass case Weight: approx. 310 mg Cathode Band Color: black Packaging Codes/Options: TR/5 k per 13" reel (52 mm tape), 25 k/box TAP/5 k per ammo pack (52 mm tape), 25 k/box Absolute Maximum Ratings Tamb = 25 C, unless otherwise specified Parameter Zener current (see Table "Electrical Characteristics") Power dissipation 1) Test condition Symbol Value Unit Ptot 1.31) W Valid provided that leads at a distance of 4 mm from case are kept at ambient temperature Thermal Characteristics Tamb = 25 C, unless otherwise specified Parameter Thermal resistance junction to ambient air Junction temperature Storage temperature 1) Test condition Symbol RthJA Tj Tstg Value 1101) 175 - 55 to + 175 Unit K/W C C Valid provided that leads at a distance of 4 mm from case are kept at ambient temperature Document Number 85607 Rev. 1.8, 31-May-07 www.vishay.com 1 BZX85-Series Vishay Semiconductors Electrical Characteristics Partnumber Zener Voltage Range 1) Dynamic Resistance Temperature Coefficient of Zener Voltage at IZK mA min < 20 < 20 < 20 < 20 < 15 < 13 < 13 < 10 <7 <4 < 3.5 <3 <5 <5 <7 <8 <9 < 10 < 15 < 15 < 20 < 24 < 25 < 25 < 30 < 30 < 35 < 40 < 50 < 50 < 90 < 115 < 120 < 125 < 130 < 135 < 200 < 250 < 350 80 80 80 60 60 50 45 45 45 35 35 35 25 25 25 20 20 20 15 15 15 10 10 10 8 8 8 8 6 6 4 4 4 4 4 4 2.7 2.7 2.7 < 400 < 400 < 400 < 500 < 500 < 500 < 600 < 500 < 400 < 300 < 300 < 200 < 200 < 200 < 200 < 300 < 350 < 400 < 500 < 500 < 500 < 600 < 600 < 600 < 750 < 1000 < 1000 < 1000 < 1000 < 1000 < 1500 < 1500 < 2000 < 2000 < 2000 < 2000 < 3000 < 3000 < 3000 1 1 1 1 1 1 1 1 1 1 1 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 - 0.08 - 0.08 - 0.08 - 0.08 - 0.07 - 0.05 - 0.03 - 0.01 0 0.01 0.015 0.02 0.03 0.035 0.04 0.045 0.045 0.05 0.055 0.055 0.06 0.06 0.06 0.06 0.06 0.06 0.06 0.06 0.06 0.06 0.06 0.06 0.06 0.06 0.055 0.055 0.055 0.055 0.055 VZ at IZ = IZT %/C max - 0.05 - 0.05 - 0.05 - 0.05 - 0.02 0.01 0.04 0.04 0.045 0.055 0.06 0.065 0.07 0.075 0.08 0.08 0.085 0.085 0.09 0.09 0.09 0.09 0.095 0.095 0.095 0.095 0.095 0.095 0.095 0.095 0.095 0.095 0.095 0.095 0.095 0.095 0.095 0.095 0.095 < 150 < 100 < 40 < 20 < 10 <3 <3 <1 <1 <1 <1 <1 <1 <1 < 0.5 < 0.5 < 0.5 < 0.5 < 0.5 < 0.5 < 0.5 < 0.5 < 0.5 < 0.5 < 0.5 < 0.5 < 0.5 < 0.5 < 0.5 < 0.5 < 0.5 < 0.5 < 0.5 < 0.5 < 0.5 < 0.5 < 0.5 < 0.5 < 0.5 1 1 1 1 1 1 1 1.5 2 3 4 4.5 6.2 6.8 7.5 8.2 9.1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 43 47 51 56 62 68 75 360 330 300 290 280 250 215 200 190 170 155 140 130 120 105 97 88 79 71 66 62 56 52 47 41 36 33 30 28 26 23 21 19 16 15 14 12 10 9.4 Reverse Leakage Admissible Zener Current Current2) VZ at IZT V min BZX85C2V7 BZX85C3V0 BZX85C3V3 BZX85C3V6 BZX85C3V9 BZX85C4V3 BZX85C4V7 BZX85C5V1 BZX85C5V6 BZX85C6V2 BZX85C6V8 BZX85C7V5 BZX85C8V2 BZX85C9V1 BZX85C10 BZX85C11 BZX85C12 BZX85C13 BZX85C15 BZX85C16 BZX85C18 BZX85C20 BZX85C22 BZX85C24 BZX85C27 BZX85C30 BZX85C33 BZX85C36 BZX85C39 BZX85C43 BZX85C47 BZX85C51 BZX85C56 BZX85C62 BZX85C68 BZX85C75 BZX85C82 BZX85C91 BZX85C100 1) 2) 3) rZT3) at IZT mA rZK3) at IR A at VR V IZ mA max 2.9 3.2 3.5 3.8 4.1 4.6 5 5.4 6 6.6 7.2 7.9 8.7 9.6 10.6 11.6 12.7 14.1 15.6 17.1 19.1 21.2 23.3 25.6 28.9 32 35 38 41 46 50 54 60 66 72 80 87 96 106 2.5 2.8 3.1 3.4 3.7 4 4.4 4.8 5.2 5.8 6.4 7 7.7 8.5 9.4 10.4 11.4 12.4 13.8 15.3 16.8 18.8 20.8 22.8 25.1 28 31 34 37 40 44 48 52 58 64 70 77 85 96 Measured with pulses tp = 5 ms Valid provided that leads are kept at ambient temperature at a distance of 10 mm from case Measured with f = 1 kHz www.vishay.com 2 Document Number 85607 Rev. 1.8, 31-May-07 BZX85-Series Vishay Semiconductors Electrical Characteristics Partnumber Zener Voltage Range1) Dynamic Resistance Temperature Coefficient of Zener Voltage at IZK mA min < 20 < 20 < 20 < 20 < 15 < 13 < 13 < 10 <7 <4 < 3.5 <3 <5 <5 <7 <8 <9 < 10 < 15 < 15 < 20 < 24 < 25 < 25 < 30 < 30 < 35 < 40 < 50 < 50 < 90 < 115 < 120 < 125 < 130 < 135 < 200 < 250 < 350 80 80 80 60 60 50 45 45 45 35 35 35 25 25 25 20 20 20 15 15 15 10 10 10 8 8 8 8 6 6 4 4 4 4 4 4 2.7 2.7 2.7 < 400 < 400 < 400 < 500 < 500 < 500 < 600 < 500 < 400 < 300 < 300 < 200 < 200 < 200 < 200 < 300 < 350 < 400 < 500 < 500 < 500 < 600 < 600 < 600 < 750 < 1000 < 1000 < 1000 < 1000 < 1000 < 1500 < 1500 < 2000 < 2000 < 2000 < 2000 < 3000 < 3000 < 3000 1 1 1 1 1 1 1 1 1 1 1 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 - 0.08 - 0.08 - 0.08 - 0.08 - 0.07 - 0.05 - 0.03 - 0.01 0 0.01 0.015 0.02 0.03 0.035 0.04 0.045 0.045 0.05 0.055 0.055 0.06 0.06 0.06 0.06 0.06 0.06 0.06 0.06 0.06 0.06 0.06 0.06 0.06 0.06 0.055 0.055 0.055 0.055 0.055 VZ at IZ = IZT %/C max - 0.05 - 0.05 - 0.05 - 0.05 - 0.02 0.01 0.04 0.04 0.045 0.055 0.06 0.065 0.07 0.075 0.08 0.08 0.085 0.085 0.09 0.09 0.09 0.09 0.095 0.095 0.095 0.095 0.095 0.095 0.095 0.095 0.095 0.095 0.095 0.095 0.095 0.095 0.095 0.095 0.095 < 150 < 100 < 40 < 20 < 10 <3 <3 <1 <1 <1 <1 <1 <1 <1 < 0.5 < 0.5 < 0.5 < 0.5 < 0.5 < 0.5 < 0.5 < 0.5 < 0.5 < 0.5 < 0.5 < 0.5 < 0.5 < 0.5 < 0.5 < 0.5 < 0.5 < 0.5 < 0.5 < 0.5 < 0.5 < 0.5 < 0.5 < 0.5 < 0.5 1 1 1 1 1 1 1 1.5 2 3 4 4.5 6.2 6.8 7.5 8.2 9.1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 43 47 51 56 62 68 75 360 330 300 290 280 250 215 200 190 170 155 140 130 120 105 97 88 79 71 66 62 56 52 47 41 36 33 30 28 26 23 21 19 16 15 14 12 10 9.4 Reverse Leakage Admissible Zener Current Current2) VZ at IZT V min BZX85B2V7 BZX85B3V0 BZX85B3V3 BZX85B3V6 BZX85B3V9 BZX85B4V3 BZX85B4V7 BZX85B5V1 BZX85B5V6 BZX85B6V2 BZX85B6V8 BZX85B7V5 BZX85B8V2 BZX85B9V1 BZX85B10 BZX85B11 BZX85B12 BZX85B13 BZX85B15 BZX85B16 BZX85B18 BZX85B20 BZX85B22 BZX85B24 BZX85B27 BZX85B30 BZX85B33 BZX85B36 BZX85B39 BZX85B43 BZX85B47 BZX85B51 BZX85B56 BZX85B62 BZX85B68 BZX85B75 BZX85B82 BZX85B91 BZX85B100 1) 2) 3) rZT3) at IZT mA rZK3) at IR A at VR V IZ mA max 2.76 3.06 3.36 3.67 3.98 4.39 4.79 5.2 5.71 6.32 6.94 7.65 8.36 9.28 10.2 11.2 12.2 13.3 15.3 16.3 18.4 20.4 22.4 24.5 27.5 30.6 33.7 36.7 39.8 43.9 47.9 52 57.1 63.2 69.4 76.5 83.6 92.8 102 2.64 2.94 2.24 3.53 3.82 4.21 4.61 5 5.49 6.08 6.66 7.35 8.04 8.92 9.8 10.8 11.8 12.7 14.7 15.7 17.6 19.6 21.6 23.5 26.5 29.4 32.3 35.3 38.2 42.1 46.1 50 54.9 60.8 66.6 73.5 80.4 89.2 98 Measured with pulses tp = 5 ms Valid provided that leads are kept at ambient temperature at a distance of 10 mm from case Measured with f = 1 kHz Document Number 85607 Rev. 1.8, 31-May-07 www.vishay.com 3 BZX85-Series Vishay Semiconductors Typical Characteristics Tamb = 25 C, unless otherwise specified C/W 103 5 4 3 2 C/W 200 rthA 102 5 4 3 2 0.5 RthA 100 0.2 0.1 0.05 0.02 0.01 max. typ. 10 5 4 3 2 tP tP v = ___ T T PI 1 10-5 0 10-1 tP 1 10 s 18458 10-4 10-3 10-2 0 10 20 lead length 30 mm 18461 Figure 1. Pulse Thermal Resistance vs. Pulse Duration Figure 4. Thermal Resistance vs. Lead Length 103 7 5 4 W 2 rzj 3 2 Ptot 56 102 7 5 4 3 2 43 1 10 0.1 0 2 3 45 1 2 3 45 10 mA 18459 0 100 Tamb 200 C 18462 IZ Figure 2. Dynamic Resistance vs. Zener Current Figure 5. Admissible Power Dissipation vs. Ambient Temperature 100 7 5 4 103 5 4 3 2 rzj 3 2 rzj 43 36 30 24 22 18 102 5 4 3 2 5V1 4V3 18 12 10 7 5 4 3 2 10 5 4 3 2 6V2 10 7V5 1 1 1 2 3 45 10 2 3 45 100 mA 18460 1 2 3 45 7 10 2 3 45 7 100 mA IZ IZ 18463 Figure 3. Dynamic Resistance vs. Zener Current Figure 6. Dynamic Resistance vs. Zener Current www.vishay.com 4 Document Number 85607 Rev. 1.8, 31-May-07 BZX85-Series Vishay Semiconductors mA 240 200 IZ 160 120 80 40 0 0 1 2 3 4 5 6 7 8 9 VZ Figure 7. Breakdown Characteristics 3V9 4V7 5V6 6V8 8V2 10 12 Tj = 25 C 10 11 12 13 14 15 V 18456 mA 60 50 IZ 40 33 15 18 22 27 Tj = 25 C 30 20 10 0 0 5 10 15 20 25 30 VZ Figure 8. Breakdown Characteristics 39 47 35 40 45 50 V 18457 Package Dimensions in millimeters (inches) 94 9368 Document Number 85607 Rev. 1.8, 31-May-07 www.vishay.com 5 BZX85-Series Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany www.vishay.com 6 Document Number 85607 Rev. 1.8, 31-May-07 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 |
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