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APT36GA60BD15 APT36GA60SD15
600V High Speed PT IGBT
TO APT36GA60SD15 POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is -2 47 achieved through leading technology silicon design and lifetime control processes. A D3PAK reduced Eoff - VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise immunity, short delay times and simple gate drive. The intrinsic chip gate resistance and capacitance of the poly-silicone gate structure help control di/dt during APT36GA60BD15 switching, resulting in low EMI, even when switching at high frequency. Combi (IGBT and Diode)
(R)
FEATURES
* Fast switching with low EMI * Very Low Eoff for maximum efficiency * Ultra low Cres for improved noise immunity * Low conduction loss * Low gate charge * Increased intrinsic gate resistance for low EMI * RoHS compliant
TYPICAL APPLICATIONS
* ZVS phase shifted and other full bridge * Half bridge * High power PFC boost * Welding * UPS, solar, and other inverters * High frequency, high efficiency industrial
Absolute Maximum Ratings
Symbol
Vces IC1 IC2 ICM VGE PD SSOA TJ, TSTG TL
Parameter
Collector Emitter Voltage Continuous Collector Current @ TC = 25C Continuous Collector Current @ TC = 100C Pulsed Collector Current 1 Gate-Emitter Voltage
2
Ratings
600 65 36 109 30 290 109A @ 600V -55 to 150 300
Unit
V
A
V W
Total Power Dissipation @ TC = 25C Switching Safe Operating Area @ TJ = 150C Operating and Storage Junction Temperature Range Lead Temperature for Soldering: 0.063" from Case for 10 Seconds
C
Static Characteristics
Symbol
VBR(CES) VCE(on) VGE(th) ICES IGES
TJ = 25C unless otherwise specified
Test Conditions
VGE = 0V, IC = 1.0mA VGE = 15V, IC = 20A VCE = 600V, VGE = 0V TJ = 25C TJ = 125C 3 TJ = 25C TJ = 125C
Parameter
Collector-Emitter Breakdown Voltage Collector-Emitter On Voltage Gate Emitter Threshold Voltage Zero Gate Voltage Collector Current Gate-Emitter Leakage Current
Min
600
Typ
2.0 1.9 4.5
Max
2.5 6 275 3000 100
Unit
V
VGE =VCE , IC = 1mA
A nA
052-6336 Rev C 6- 2009
VGS = 30V
Microsemi Website - http://www.microsemi.com
Dynamic Characteristics
Symbol
Cies Coes Cres Qg Qge Qgc SSOA td(on) tr td(off) tf Eon2 Eoff td(on) tr td(off) tf Eon2 Eoff
TJ = 25C unless otherwise specified
Test Conditions
Capacitance VGE = 0V, VCE = 25V f = 1MHz Gate Charge VGE = 15V VCE= 300V IC = 20A TJ = 150C, RG = 104, VGE = 15V, L= 100uH, VCE = 600V Inductive Switching (25C) VCC = 400V VGE = 15V IC = 20A RG = 104
6
APT36GA60B_SD15
Min Typ
2880 226 328 102 18 36 109 16 14 122 77 307 254 14 15 149 113 508 439 J ns J ns nC pF
Parameter
Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
3
Max
Unit
Gate-Emitter Charge Gate- Collector Charge Switching Safe Operating Area Turn-On Delay Time Current Rise Time Turn-Off Delay Time Current Fall Time Turn-On Switching Energy Turn-Off Switching Energy Turn-On Delay Time Current Rise Time Turn-Off Delay Time Current Fall Time Turn-On Switching Energy Turn-Off Switching Energy
6
A
TJ = +25C Inductive Switching (125C) VCC = 400V VGE = 15V IC = 20A RG = 104 TJ = +125C
Thermal and Mechanical Characteristics
Symbol
RJC RJC WT Torque
Characteristic
Junction to Case Thermal Resistance (IGBT) Junction to Case Thermal Resistance (Diode) Package Weight Mounting Torque (TO-247 Package), 4-40 or M3 screw
Min
-
Typ
-
Max
.43 1.35
Unit
C/W g in*lbf
-
5.9
10
1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 2 Pulse test: Pulse Width < 380s, duty cycle < 2%. 3 See Mil-Std-750 Method 3471. 4 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452) 5 Eon2 is the clamped inductive turn on energy that includes a commutating diode reverse recovery current in the IGBT turn on energy loss. A combi device is used for the clamping diode. 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. Microsemi reserves the right to change, without notice, the specifications and information contained herein.
052-6336 Rev C 6 - 2009
Typical Performance Curves
60 50 40 30 20 10 0
V
GE
APT36GA60BD_S15
280 240 200 12V 160 11V 120 80 40 0 10V 9V 8V 6V 0 4 8 12 16 20 24 28 32 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 2, Output Characteristics (TJ = 25C)
I = 20A C T = 25C
J
= 15V
15V
13V
IC, COLLECTOR CURRENT (A)
TJ= 55C TJ= 25C
TJ= 125C TJ= 150C
0
1 2 3 4 5 6 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 1, Output Characteristics (TJ = 25C) VGE, GATE-TO-EMITTER VOLTAGE (V)
250s PULSE TEST<0.5 % DUTY CYCLE
IC, COLLECTOR CURRENT (A)
300 250 200 150 100 50 0
16 14 12 10 8 6 4 2 0
IC, COLLECTOR CURRENT (A)
VCE = 120V VCE = 300V VCE = 480V
TJ= 25C TJ= 125C 0 2 4 6 8
TJ= -55C
10
12
14
0 10
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
TJ = 25C. 250s PULSE TEST <0.5 % DUTY CYCLE
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
4
VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 3, Transfer Characteristics
20 30 40 50 60 70 80 GATE CHARGE (nC) FIGURE 4, Gate charge
90 100
5
3
4
IC = 40A IC = 20A
3
IC = 40A IC = 20A IC = 10A
VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE
2 IC = 10A 1
2
1
8 10 12 14 16 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gate-to-Emitter Voltage
1.15
0
6
50 75 100 125 150 TJ, Junction Temperature (C) FIGURE 6, On State Voltage vs Junction Temperature 80 70
0
0
25
VGS(TH), THRESHOLD VOLTAGE (NORMALIZED)
1.10 1.05 1.00 0.95 0.90 0.85 0.80 0.75 0.70
IC, DC COLLECTOR CURRENT (A)
60 50 40 052-6336 Rev C 6- 2009 30 20 10 75 100 125 150 TC, Case Temperature (C) FIGURE 8, DC Collector Current vs Case Temperature 0 25 50
0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE FIGURE 7, Threshold Voltage vs Junction Temperature
-50 -25
Typical Performance Curves
20 td(OFF), TURN-OFF DELAY TIME (ns) td(ON), TURN-ON DELAY TIME (ns) 200
APT36GA60BD_S15
18
160
VGE =15V,TJ=125C
16 VGE = 15V
120
VGE =15V,TJ=25C
14
80
12
10
VCE = 400V TJ = 25C, or 125C RG = 10 L = 100H
40
VCE = 400V RG = 10 L = 100H
0 5 10 15 20 25 30 35 40 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 9, Turn-On Delay Time vs Collector Current
RG = 10, L = 100H, VCE = 400V
0 5 10 15 20 25 30 35 40 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 10, Turn-Off Delay Time vs Collector Current 150 125 100 75 50 25 0
TJ = 25C, VGE = 15V TJ = 125C, VGE = 15V RG = 10, L = 100H, VCE = 400V
0
40 35 30
tr, RISE TIME (ns)
20 15 10 5 0 0CE, COLLECTOR-TO-EMITTER 30 35 40 5 10 15 20 25 CURRENT (A) I
FIGURE 11, Current Rise Time vs Collector Current
TJ = 25 or 125C,VGE = 15V
1500 Eon2, TURN ON ENERGY LOSS (J) 1250 1000 750 500 250 0
tr, FALL TIME (ns)
25
EOFF, TURN OFF ENERGY LOSS (J)
V = 400V CE V = +15V GE R =10
G
0 5 10 15 20 25 30 35 40 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 12, Current Fall Time vs Collector Current 1200 1000 800 600 400 200 0
V = 400V CE V = +15V GE R = 10
G
TJ = 125C
TJ = 125C
TJ = 25C
TJ = 25C
0 5 10 15 20 25 30 35 40 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 13, Turn-On Energy Loss vs Collector Current 2000 SWITCHING ENERGY LOSSES (J) 1800 1600 1400 1200 1000 800 600 400 200 0 0
Eoff,20A Eon2,10A Eoff,10A Eon2,20A Eoff,40A
V = 400V CE V = +15V GE T = 125C
J
0 5 10 15 20 25 30 35 40 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 14, Turn-Off Energy Loss vs Collector Current 1600 SWITCHING ENERGY LOSSES (J) 1400 1200 1000 800 600 400 200 0 0
Eoff,40A
V = 400V CE V = +15V GE R = 10
G
Eon2,40A
Eon2,40A
052-6336 Rev C 6 - 2009
Eon2,20A Eoff,20A Eon2,10A Eoff,10A
10 20 30 40 50 RG, GATE RESISTANCE (OHMS) FIGURE 15, Switching Energy Losses vs Gate Resistance
25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) FIGURE 16, Switching Energy Losses vs Junction Temperature
Typical Performance Curves
10000 Cies IC, COLLECTOR CURRENT (A) C, CAPACITANCE (pF) 200 100
APT36GA60B_SD15
1000
10
100
Coes
1
Cres 0 100 200 300 400 500 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) FIGURE 17, Capacitance vs Collector-To-Emitter Voltage 10
1 10 100 800 VCE, COLLECTOR-TO-EMITTER VOLTAGE FIGURE 18, Minimum Switching Safe Operating Area
0.1
0.50 ZJC, THERMAL IMPEDANCE (C/W) 0.45 0.40 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0 10
-5
D = 0.9
0.7
0.5 0.3 0.1 0.05 10
-4
Note:
PDM
t1 t2
SINGLE PULSE
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t
10 -3 10 -2 10 -1 RECTANGULAR PULSE DURATION (SECONDS) Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
1.0
052-6336 Rev C 6- 2009
APT36GA60BD_S15
10% Gate Voltage td(on) TJ = 125C 90% tr
V CC IC V CE
APT15DQ60
Collector Current 5% Collector Voltage
5%
10%
Switching Energy
A D.U.T.
Figure 20, Inductive Switching Test Circuit
Figure 21, Turn-on Switching Waveforms and Definitions
90% td(off)
TJ = 125C Gate Voltage Collector Voltage
tf
10%
0
Collector Current
Switching Energy
Figure 22, Turn-off Switching Waveforms and Definitions
052-6336 Rev C 6 - 2009
ULTRAFAST SOFT RECOVERY RECTIFIER DIODE
MAXIMUM RATINGS Symbol Characteristic / Test Conditions
IF(AV) IF(RMS) IFSM Maximum Average Forward Current (TC = 129C, Duty Cycle = 0.5) RMS Forward Current (Square wave, 50% duty) Non-Repetitive Forward Surge Current (TJ = 45C, 8.3 ms)
All Ratings: TC = 25C unless otherwise specified. APT36GA60B_SD15
15 30 110 Amps
Unit
STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions
IF = 15A VF Forward Voltage IF = 30A IF = 15A, TJ = 125C
Min
Type
2.0 2.5 1.56
Max
Unit
Volts
DYNAMIC CHARACTERISTICS Symbol Characteristic
trr trr Qrr IRRM trr Qrr IRRM trr Qrr IRRM Reverse Recovery Time Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current
1.40 ZJC, THERMAL IMPEDANCE (C/W) 1.20 1.00 0.80 0.5 0.60
PDM
t1 t2
Test Conditions
IF = 1A, diF/dt = -100A/s, VR = 30V, TJ = 25C IF = 15A, diF/dt = -200A/s VR = 400V, TC = 25C
Min
-
Typ 15 19 21 2 105 250 5 55 420 15
Max
-
Unit
ns
nC Amps ns nC Amps ns nC Amps
IF = 15A, diF/dt = -200A/s VR = 400V, TC = 125C
-
IF = 15A, diF/dt = -1000A/s VR = 400V, TC = 125C
-
D = 0.9
0.7
Note:
0.40 0.20 0 10-5
0.3
0.1 0.05 10-4 SINGLE PULSE
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t
10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (seconds) FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
052-6336 Rev C 6- 2009
Dynamic Characteristics
60
TJ = 25C unless otherwise specified
140
APT36GA60B_SD15
T =125C J V =400V
trr, REVERSE RECOVERY TIME (ns)
50 IF, FORWARD CURRENT (A) TJ = 175C 40 TJ = 125C
120 30A 100 80 60 40 20 0 15A
R
30
7.5A
20
10 0
TJ = 25C TJ = -55C 0
1 2 3 4 VF, ANODE-TO-CATHODE VOLTAGE (V) Figure 2. Forward Current vs. Forward Voltage
T =125C J V =400V
0 200 400 600 800 1000 1200 1400 1600 -diF /dt, CURRENT RATE OF CHANGE(A/s) Figure 3. Reverse Recovery Time vs. Current Rate of Change 25 IRRM, REVERSE RECOVERY CURRENT (A)
T =125C J V =400V
R
700 Qrr, REVERSE RECOVERY CHARGE (nC) 600 500 400 300 200 100 0 7.5A
R
30A
20 30A 15
15A
10 7.5A
15A
5
0 200 400 600 800 1000 1200 1400 1600 -diF /dt, CURRENT RATE OF CHANGE (A/s) Figure 4. Reverse Recovery Charge vs. Current Rate of Change 1.2 Kf, DYNAMIC PARAMETERS (Normalized to 1000A/s) Qrr trr
0 200 400 600 800 1000 1200 1400 1600 -diF /dt, CURRENT RATE OF CHANGE (A/s) Figure 5. Reverse Recovery Current vs. Current Rate of Change 35 30 25
Duty cycle = 0.5 T =175C
J
0
1.0
0.8 IRRM 0.6 trr 0.4 10 0.2 0.0 Qrr 5 0 IF(AV) (A) 20 15
25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 6. Dynamic Parameters vs. Junction Temperature 90 CJ, JUNCTION CAPACITANCE (pF) 80 70 60 50 40 30 20 10 10 100 200 VR, REVERSE VOLTAGE (V) Figure 8. Junction Capacitance vs. Reverse Voltage 0 1
0
75 100 125 150 175 Case Temperature (C) Figure 7. Maximum Average Forward Current vs. CaseTemperature
25
50
052-6336 Rev C 6 - 2009
Dynamic Characteristics
TJ = 25C unless otherwise specified
Vr
APT36GA60B_SD15
+18V 0V
diF /dt Adjust
D.U.T. 30H
trr/Qrr Waveform
PEARSON 2878 CURRENT TRANSFORMER
Figure 9. Diode Test Circuit
1 2 3 4
IF - Forward Conduction Current diF /dt - Rate of Diode Current Change Through Zero Crossing. IRRM - Maximum Reverse Recovery Current. Zero
1
4
5 3 2
0.25 IRRM
trr - Reverse Recovery Time, measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through IRRM and 0.25 IRRM passes through zero. Qrr - Area Under the Curve Defined by IRRM and trr.
5
Figure 10, Diode Reverse Recovery Waveform and Definitions
TO-247 (B) Package Outline
e3 100% Sn Plated
(Heat Sink)
Collector (Cathode)
4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 6.15 (.242) BSC 20.80 (.819) 21.46 (.845) 3.50 (.138) 3.81 (.150)
D3PAK Package Outline
4.98 (.196) 5.08 (.200) 1.47 (.058) 1.57 (.062) 15.95 (.628) 16.05(.632) 13.41 (.528) 13.51(.532)
15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244)
1.04 (.041) 1.15(.045)
Collector (Cathode)
Revised 4/18/95
13.79 (.543) 13.99(.551)
Revised 8/29/97
11.51 (.453) 11.61 (.457)
0.46 (.018) 0.56 (.022) {3 Plcs}
4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055)
0.020 (.001) 0.178 (.007) 2.67 (.105) 2.84 (.112) 1.22 (.048) 1.32 (.052)
1.27 (.050) 1.40 (.055) 1.98 (.078) 2.08 (.082) 5.45 (.215) BSC {2 Plcs.}
3.81 (.150) 4.06 (.160) (Base of Lead)
19.81 (.780) 20.32 (.800)
Heat Sink (Collector)
Collector (Cathode) Emitter (Anode)
2.21 (.087) 2.59 (.102)
5.45 (.215) BSC 2-Plcs.
Emitter (Anode) Collector (Cathode) Gate
Dimensions in Millimeters and (Inches)
Dimensions in Millimeters (Inches)
Microsemi's products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. US and Foreign patents pending. All Rights Reserved.
052-6336 Rev C 6- 2009
Gate
and Leads are Plated

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