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Datasheet File OCR Text: |
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC790 DESCRIPTION *Low Collector Saturation Voltage: VCE(sat)= 1.4(V)(Max)@ IC= 2A *DC Current Gain: hFE= 40-240 @ IC= 0.5A *Complement to Type 2SA490 APPLICATIONS *Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage ww w scs .i VALUE 50 40 5 3 -3 25 UNIT .cn mi e V V V A A IC Collector Current-Continuous IE Emitter Current-Continuous Total Power Dissipation @ TC=25 Junction Temperature PC W TJ 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SC790 MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0 40 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 10mA; IC= 0 5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A B 1.4 V VBE(on) Base-Emitter On Voltage IC= 2A; VCE= 2V 1.8 V ICBO Collector Cutoff Current VCB= 30V; IE= 0 10 A IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE-1 DC Current Gain hFE-2 DC Current Gain fT Current-Gain--Bandwidth Product COB Collector Output Capacitance w w Y 120-240 scs .i w IC= 0.5A; VCE= 2V IC= 2A; VCE= 2V .cn mi e 40 13 3 70 100 A 240 IC= 0.5A; VCE= 2V MHz IE= 0; VCB= 10V; f= 1MHz pF hFE-1 Classifications R 40-80 O 70-140 isc Websitewww.iscsemi.cn 2 |
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