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| SSO-AD-500-TO52I Avalanche Photodiode Special characteristics: High gain at low bias voltage Fast rise time 500 m diameter active area low capacitance Parameters: active area Dark current (M=100) 1) Total capacitance (M=100) Break down voltage UBR (at ID=2A) Temperature coefficient of UBR Spectral responsivity (at 780 nm) Cut-off frequency (-3dB) Rise time Optimum gain Gain M "Excess Noise" factor (M=100) "Excess Noise" index (M=100) Noise current (M=100) N.E.P. (M=100, 880 nm) Operating temperature Storage temperature 50 - 60 min 200 1) Package 1a (TO52i) : 0,196 mm 500 m max. 5 nA typ. 0,5 - 1 nA typ. 2,5 pF 120 - 190 V typ. 0,4 %/C min. 0,40 A/W typ. 0,45 A/W typ. 1,3 GHz typ. 280 ps 2 typ. 2,2 typ. 0,2 typ. 1 pA/Hz 1/2 typ. 2 * 10 W/Hz -20 ... +70C -60 ... +100C -14 1/2 1) measurement conditions: Setup of photo current 10nA at M=1 and irradiation by a NIR-LED (880 nm, 80 nm bandwith). Rise of the photo current up to 1 A, (M=100) by internal multiplication due to an increasing bias voltage. SSO - AD - serie Spectral Responsivity at M=1 0,600 0,500 0,400 0,300 0,200 0,100 0,000 400 500 600 700 800 900 1000 1100 60 50 40 30 20 10 0 400 500 SSO - AD - serie Spectral Responsivity at M=100 Sabs (A/W) Sabs (A/W) 600 700 800 900 1000 1100 Wavelength (nm) Wavelength (nm) SSO - AD - serie quantum efficiency for M=1 1,00 0,90 0,80 0,70 0,60 QE 0,50 0,40 0,30 0,20 0,10 0,00 400 480 560 640 720 800 880 960 1040 10 5 0 0 20 Ctot (pF) 35 30 25 20 15 40 SSO-AD 500 Ctot = f(UR) at f=100kHz wavelength (nm) 40 UR (V) 60 80 100 SSO-AD 500 dark current = f(UR) 100000 10000 10000 1000 SSO - AD - serie (versions 500, 800, 1100, 2500) gain = f(UR/UBR) at =880 nm ID (pA) 1000 M 100 100 10 10 1 0 50 100 UR (V) 150 200 1 0 0,2 0,4 UR/UBR 0,6 0,8 1 Maximum Ratings: * * * * max. electrical power dissipation max. optical peak value, once max. continous optical operation ( Pelectr. = Popt. * Sabs * M * UR ) 100 mW at 22C 200 mW for 1 s IPh (DC) 250 A 1 mA for signal 50 s "on" / 1 ms "out" Bias supply voltage Current limiting resistor Application hints: * * * * * * * Current limit is to be realized via protecting resistor or current limiting - IC inside the supply voltage. Use of low noise read-out - IC. For higher gain a regulation of bias voltage due to the temperature is to be realized. For very small signals stray light (noise source) is to be excluded by filters in order to improve the signal-noise relation. Avoid touching the window with fingers! Careful cleaning with Ethyl alcohol possible. Avoid use of pointed and scratching tools! min. 0,1 F, closest to APD APD Diode, protective circuit Read-out circuit or f.e. 50 Load resistance Handling precautions: * * * Soldering temperature min. Pin - length ESD - protection Storage 260C for max. 10 s. The device must be protected against solder flux vapour! 2mm Only small danger for the device. Standard precautionary measures are sufficient. Store devices in conductive foam. 1999/07 * |
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