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FDW2501N
July 2008
FDW2501N
Dual N-Channel 2.5V Specified PowerTrench(R) MOSFET
General Description
This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor's advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V - 12V).
Features
* 6 A, 20 V. RDS(ON) = 0.018 @ VGS = 4.5V RDS(ON) = 0.028 @ VGS = 2.5V
* Extended VGSS range (12V) for battery applications. * High performance trench technology for extremely low RDS(ON) * Low profile TSSOP-8 package
Applications
* Load switch * Motor drive * DC/DC conversion * Power management
G2 S2 S2 D2 G1 S1 S1 D1
Pin 1
1 2 3 4
8 7 6 5
TSSOP-8
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Power Dissipation
TA=25oC unless otherwise noted
Parameter
Ratings
20 12
(Note 1a)
Units
V V A W C
6 30 1.0 0.6 -55 to +150
(Note 1a) (Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RJA Thermal Resistance, Junction-to-Ambient
(Note 1a) (Note 1b)
125 208
C/W
Package Marking and Ordering Information
Device Marking 2501N Device FDW2501N Reel Size 13'' Tape width 12mm Quantity 2500 units
(c)2008 Fairchild Semiconductor Corporation
FDW2501N Rev E1(W)
FDW2501N
Electrical Characteristics
Symbol
BVDSS BVDSS TJ IDSS IGSS
TA = 25C unless otherwise noted
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage
(Note 2)
Test Conditions
VGS = 0 V, ID = 250 A
Min Typ Max Units
20 12 1 100 V mV/C A nA
Off Characteristics
ID = 250 A, Referenced to 25C VDS = 16 V, VGS = 12 V, VGS = 0 V VDS = 0 V
On Characteristics
VGS(th) VGS(th) TJ RDS(on)
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance
VDS = VGS, ID = 250 A ID = 250 A, Referenced to 25C VGS = 4.5 V, ID = 6.0 A VGS = 2.5 V, ID = 5.0 A VGS = 4.5 V, ID = 6.0A, TJ=125C VGS = 4.5 V, VDS = 5 V, VDS = 5 V ID = 6.0 A
0.4
0.9 -3.2 15.5 19.6 20
1.5
V mV/C
18 28 29
m
ID(on) gFS
30 32
A S
Dynamic Characteristics
Ciss Coss Crss RG Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance
(Note 2)
VDS = 10 V, f = 1.0 MHz VGS = 15 mV,
V GS = 0 V,
1290 315 170
pF pF pF
f = 1.0 MHz
2.0
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
VDD = 10 V, VGS = 4.5 V,
ID = 1 A, RGEN = 6
10 15 26 9.5
18 27 47 19 17
ns ns ns ns nC nC nC
VDS = 10 V, VGS = 4.5 V
ID = 6.0 A,
12 2.4 3.3
Drain-Source Diode Characteristics and Maximum Ratings
trr Qrr IS VSD Diode Reverse Recovery Time Diode Reverse Recovery Charge IF = 6.0 A, diF/dt = 100 A/s 20 6.7
(Note 2)
nS nC 0.83 1.2 A V
Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward VGS = 0 V, IS = 0.83 A Voltage
0.7
Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. a) RJA is 125C/W (steady state) when mounted on a 1 inch copper pad on FR-4. b) RJA is 208C/W (steady state) when mounted on a minimum copper pad on FR-4. 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0%
FDW2501N Rev E1(W)
FDW2501N
Typical Characteristics
30 VGS = 4.5V 25 ID, DRAIN CURRENT (A) 3.5V 20 2.0V 15 2.5V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
1.8 VGS = 2.0V 1.6
1.4 2.5V 1.2 3.0V 3.5V 1 4.0V 4.5V
10
5 1.5V 0 0 0.5 1 1.5 2 VDS, DRAIN-SOURCE VOLTAGE (V) 2.5 3
0.8 0 5 10 15 20 ID, DRAIN CURRENT (A) 25 30
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
0.05 RDS(ON), ON-RESISTANCE (OHM)
1.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID = 6.0A VGS = 4.5V 1.4
ID = 3.0A
0.04
1.2
0.03
1
TA = 125 C
0.02
o
0.8
TA = 25oC
0.01 0 2 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V)
0.6 -50 -25 0 25 50 75 100
o
125
150
TJ, JUNCTION TEMPERATURE ( C)
Figure 3. On-Resistance Variation with Temperature.
30
Figure 4. On-Resistance Variation with Gate-to-Source Voltage.
100
VDS = 5V
IS, REVERSE DRAIN CURRENT (A)
VGS = 0V
10
25 ID, DRAIN CURRENT (A)
TA = 125oC
1
20
25oC
0.1
15
-55oC
0.01
10
TA = 125 C
5
o
-55oC 25oC
0.001
0 0.5 1 1.5 2 VGS, GATE TO SOURCE VOLTAGE (V) 2.5
0.0001 0 0.2 0.4 0.6 0.8 1 VSD, BODY DIODE FORWARD VOLTAGE (V) 1.2
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
FDW2501N Rev E1(W)
FDW2501N
Typical Characteristics
10 VGS, GATE-SOURCE VOLTAGE (V) ID = 6.0A 8 VDS = 5V 6 15V 4 CAPACITANCE (pF) 10V
1800 f = 1MHz VGS = 0 V 1500
Ciss
1200
900
600
Coss
300
2
Crss
0 0 5 10 15 20 Qg, GATE CHARGE (nC) 25 30 0 0 5 10 15 VDS, DRAIN TO SOURCE VOLTAGE (V) 20
Figure 7. Gate Charge Characteristics.
100 P(pk), PEAK TRANSIENT POWER (W) RDS(ON) LIMIT 100us ID, DRAIN CURRENT (A) 10 100ms 1s 1 10s DC VGS = 4.5V SINGLE PULSE RJA = 208oC/W TA = 25 C 0.01 0.1 1 10 100 VDS, DRAIN-SOURCE VOLTAGE (V)
o
Figure 8. Capacitance Characteristics.
50 SINGLE PULSE RJA = 208C/W TA = 25C
1ms 10ms
40
30
20
0.1
10
0 0.001
0.01
0.1
1 t1, TIME (sec)
10
100
1000
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power Dissipation.
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE
1
D = 0.5 0.2
0.1
0.1 0.05
RJA(t) = r(t) * RJA RJA =208 C/W P(pk)
0.02 0.01
t1 t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2
0.01
SINGLE PULSE
0.001 0.0001
0.001
0.01
0.1 t1, TIME (sec)
1
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design.
FDW2501N Rev E1(W)
TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidianries, and is not intended to be an exhaustive list of all such trademarks. Build it NowTM CorePLUSTM CorePOWERTM CROSSVOLTTM CTLTM Current Transfer LogicTM EcoSPARK(R) EfficentMaxTM EZSWITCHTM *
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* EZSWITCHTM and FlashWriter(R) are trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Farichild's Anti-Counterfeiting Policy is also stated on our external website, www.fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Farichild strongly encourages customers to purchase Farichild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild's quality standards for handing and storage and provide access to Farichild's full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Farichild is committed to committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Preliminary No Identification Needed Obsolete Product Status Formative / In Design First Production Full Production Not In Production Definition Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only.
Rev. I35

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