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 CHENMKO ENTERPRISE CO.,LTD
SURFACE MOUNT Dual Silicon Transistor
NPN:VOLTAGE 60 Volts PNP:VOLTAGE 15 Volts
APPLICATION
* Small Signal Amplifier .
CHEMZ8PT
CURRENT 150 mAmpere CURRENT 500 mAmpere
FEATURE
* Small surface mounting type. (SOT-563) * PC= 150mW (Total),120mW per element must not be exceeded. * High saturation current capability. * Both the 2SC2412K & 2SA2018 in one package. * NPN / PNP Silicon Transistor
0.9~1.1 0.15~0.3
(3) (4) (1) (5)
SOT-563
0.50 0.50
1.5~1.7
MARKING
* Z8
1.1~1.3
0.5~0.6 0.09~0.18
CIRCUIT
3
1
1.5~1.7
4
6
Dimensions in millimeters
SOT-563
2SC2412K LIMITING VALUES
MAXIMUM RATINGES ( At TA = 25oC unless otherwise noted ) RATINGS Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current DC Peak Collector Current Peak Base Current Total Power Dissipation Storage Temperature Junction Temperature Operating Ambient Temperature TA 25OC; Note 1 CONDITION Open Emitter Open Base Open Collector SYMBOL VCBO VCEO VEBO IC ICM IBM PTOT TSTG TJ TAMB MIN. -55 -55 MAX. 60 50 7 150 150 15 150 +150 +150 +150 UNITS Volts Volts Volts mAmps mAmps mAmps mW
o
C C C
o
o
Note
1. Transistor mounted on ceramic substrate 50mmX50mmx0.8t. 2004-07
2SA2018 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL
VCBO VCEO VEBO IC DC Output current ICP Pc TSTG TJ power dissipation Storage temperature Junction temperature NOTE.1 -55 -1000 150 +150 150 mW
O
PARAMETER
Collector-base voltage Collector-emitter voltage Emitter-base voltage
CONDITIONS
MIN.
- -
MAX.
-15 -12 -6 -500
UNIT
V V V
mA
C C
O
Note
1. Single Pulse Pw=1ms
2SC2412K CHARACTERISTICS
ELECTRICAL CHARACTERISTICS ( At TA = 25oC unless otherwise noted ) PARAMETERS Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Output Collector Capacitance Transition Frequency CONDITION IC=50uA IC=1mA IE=50uA IE=0; VCB=60V IC=0; VEB=7V VCE=6V IC=1mA IC=50mA; IB=5mA IE=ie=0; VCB=12V; f=1MHz IC=2mA; VCE=12V; f=100MHz SYMBOL BVCBO BVCEO BVEBO ICBO ICEO hFE VCEsat Cob fT MIN. 60 50 7 120 TYPE 2 180 MAX. 0.1 0.1 560 0.4 3.5 Volts pF MHz uA UNITS Volts Volts Volts
2SA2018 CHARACTERISTICS Tamb = 25 C unless otherwise specied. SYMBOL
BVCEO BVCBO BVEBO ICBO IEBO hFE VCE(sat) Cob fT
PARAMETER
Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Collector output capacitance Transition frequency
CONDITIONS
IC=-1mA IC=-10uA IE=-10uA VCB=-15V VEB=-6V VCE=-2V,IC=-10mA IC=-200mA,IB=-10mA VCB=-10V,IE=0mA,f=1MHZ VCE=-2V,IE=10mA,f=100MHZ
MIN.
TYP.
-
MAX.
-12 V V V -100 -100 nA
UNIT
-15 -6 270 -
-100 6.5 260
nA
680
-250 -
-
mV pF MHz
RATING CHARACTERISTIC CURVES ( CHEMZ8PT )
2SC2412K Typical Electrical Characteristics
Fig.1
50
Grounded emitter propagation characteristics
VCE=6V
COLLECTOR CURRENT : IC (mA)
Fig.2
100
Grounded emitter output characteristics
0.50mA
mA 0.45 A 0.40m 35mA 0. 0.30mA
500
Fig.3 DC current gain vs. collector current (1)
Ta=25OC
Ta=25OC
COLLECTOR CURRENT : IC (mA)
20 10 5
Ta=100 OC
25 C 55 OC
DC CURRENT GAIN : hFE
80
200
60
0.25mA 0.20mA
VCE=5V 3V 1V
100
2 1 0.5 0.2 0.1 0
40
0.15mA 0.10mA
50
20
0.05mA IB=0A 0 0.4 0.8 1.2 1.6 2.0
20 10 0.2
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 BASE TO EMITTER VOLTAGE : VBE (V)
0.5 1
2
5
10 20
50 100 200
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
COLLECTOR CURRENT : IC (mA)
Fig.4 DC current gain vs. collector current (2)
500 Ta=100OC
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
Fig. 5 Collector-emitter saturation voltage vs. collector current
0.5
Fig.6 Collector-emitter saturation voltage vs. collector current
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
VCE=5V
Ta=25
0.5
IC/IB=10
DC CURRENT GAIN : hFE
200
25OC -55OC
0.2 IC/IB=50 20 10
0.2 Ta=100OC 25OC -55OC
100
0.1 0.05
0.1 0.05
50
0.02
0.02
20 10 0.2
0.5 1
2
5
10 20
50 100 200
0.01 0.2
0.01 0.2 0.5 1 2 5 10 20 50 100 200
0.5 1
2
5
10
20
50 100
COLLECTOR CURRENT : IC (mA)
COLLECTOR CURRENT : IC (mA)
COLLECTOR CURRENT : IC (mA)
Fig.7 Gain bandwidth product vs. emitter current
BASE COLLECTOR TIME CONSTANT : Cc*rbb' (ps)
TRANSITION FREQUENCY : fT (MHz)
Fig.8 Base-collector time constant vs. emitter current
Ta=25OC f=32MHZ VCB=6V
500
Ta=25O VCE=6V
200
100
200
50
100
20
50 0.5
10 0.2 0.5 1 2 5 10
1
2
5
10
20
50
100
EMITTER CURRENT : IE (mA)
EMITTER CURRENT : IE (mA)
RATING CHARACTERISTIC CURVES ( CHEMZ8PT )
2SA2018 Typical Electrical Characteristics
Fig.1 Ground emitter propagation characteristics
1000
Fig.2 DC current gain vs. collector current
1000 Ta=125 C 25 C
DC CURRENT GAIN : hFE
O O
COLLECTOR CURRENT : IC(mA)
VCE=2V pulsed
VCE=2V pulsed
-40 C 100
O
100
10
Ta=125 C Ta=25 C
O O O
10
Ta=-40 C
1
1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1
10
100
1000
BASE TO EMITTER VOLTAGE : VBE(V)
COLLECTOR CURRENT : IC(mA)
COLLECTOR SATURATION VOLTAGE : VCE(sat)(mV)
1000
COLLECTOR SATURATION VOLTAGE : VCE(sat)(mV)
Fig.3 Collector-emitter saturation voltage vs. collector current ( I )
Ta=25 C pulsed
O
Fig.4 Collector-emitter saturation voltage vs. collector current ( II )
1000 IC/IB=20 pulsed
100 Ta=125 C Ta=25 C 10 Ta=-40 C
O O O
100
Ta=125 C O Ta=25 C O Ta=-40 C
O
10
1 1 10 100 1000
1
1
10
100
1000
COLLECTOR CURRENT : IC (mA)
COLLECTOR CURRENT : IC (mA)
RATING CHARACTERISTIC CURVES ( CHEMZ8PT )
2SA2018 Typical Electrical Characteristics
Fig.5 Base-emitter saturation voltage vs. collector current
BASER SATURATION VOLTAGE : VBE(sat)(mV)
Fig.6 Gain bandwidth product vs. collector current
1000
TRANSITION FREQUENCY : fT(MHZ)
1000
IC/IB=20 pulsed Ta=-40OC O Ta=25 C O Ta=125 C
VCE=2V O Ta=25 C pulsed
100
100
10
10
1 1 10 100 1000
1 1 10 100 1000
COLLECTOR CURRENT : IC(mA)
EMITTER CURRENT : IE(mA)
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
Fig.7 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage
1000 IE=0A f=1MHZ O Ta=25 C
EMITTER INPUT CAPACITANCE : Cib (pF)
100 Cib 10 Cob
1 1 10 100 1000
COLLECTOR TO BASE VOLTAGE : VCB(V)


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