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MA4E2532L-1113, MA4E2532M-1113
SURMOUNTTM Low & Medium Barrier Silicon Schottky Diodes: Ring Quad Series
Features
* Extremely Low Parasitic Capacitance and Inductance * Surface Mountable in Microwave Circuits, No Wirebonds Required * Rugged HMIC Construction with Polyimide Scratch Protection * Reliable, Multilayer Metalization with a Diffusion Barrier, 100% Stabilization Bake (300C, 16 hours) * Lower Susceptibility to ESD Damage
M/A-COM Products
Rev. V3
Case Style 1113
A
B
Description
The MA4E2532-1113 Series SURMOUNTTM Low and Medium Barrier, Silicon Schottky Ring Quad Diodes are fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of Silicon pedestals which form diodes or via conductors embedded in a glass dielectric, which acts as the low dispersion, low loss, microstrip transmission medium. The combination of silicon and glass allows HMIC devices to have excellent loss and power dissipation characteristics in a low profile, reliable device. The Surmount Schottky devices are excellent choices for circuits requiring the small parasitics of a beam lead device coupled with the superior mechanical performance of a chip. The Surmount structure employs very low resistance silicon vias to connect the Schottky contacts to the metalized mounting pads on the bottom surface of the chip. These devices are reliable, repeatable, and a lower cost performance solution to conventional devices. They have lower susceptibility to electrostatic discharge than conventional beam lead Schottky diodes. The multi-layer metallization employed in the fabrication of the Surmount Schottky junctions includes a platinum diffusion barrier, which permits all devices to be subjected to a 16-hour non-operating stabilization bake at 300C. The "0505" outline allows for Surface Mount placement and multi-functional polarity orientations.
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ADVANCED: Data Sheets contain information regarding a product M/A-COM is considering for * North America Tel: 800.366.2266 / Fax: 978.366.2266 development. Performance is based on target specifications, simulated results, and/or prototype * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 measurements. Commitment to develop is not guaranteed. * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM has under developVisit www.macom.com for additional data sheets and product information. ment. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in MA-COM Technical Solutions and its affiliates reserve the right to make changes to the volume is not guaranteed.
C
D
E
D
Case Style 1113
DIM
A B C D Sq. E
INCHES MIN.
0.0445 0.0445 0.0040 0.0128 0.0128
MILLIMETERS MIN.
1.130 1.130 0.102 0.325 0.325
MAX.
0.0465 0.0465 0.0080 0.0148 0.0148
MAX.
1.180 1.180 0.203 0.375 0.375
product(s) or information contained herein without notice.
MA4E2532L-1113, MA4E2532M-1113
SURMOUNTTM Low & Medium Barrier Silicon Schottky Diodes: Ring Quad Series
Electrical Specifications @ 25C (Measured as Single Diodes)
Model Number Type Recommended Freq. Range Vf @ 1 mA (mV)
330 Max. 300 Typ. 470 Max. 440 Typ.
M/A-COM Products
Rev. V3
Vf @ 1 mA
(mV)
10 Max. 10 Max.
Ct @ 0 V (pF)
0.16 Max. 0.10 Typ. 0.18 Max. 0.12 Typ.
Rt Slope Resistance (Vf1-Vf2) / (10.5 mA - 9.5 mA) ()
16 Typ. 20 Max. 10 Typ. 18 Max.
MA4E2532L-1113 MA4E2532M-1113
Low Barrier Medium Barrier
DC - 18 GHz DC - 18 GHz
1. Rt is the dynamic slope resistance where Rt = Rs + Rj where Rj = 26 / Idc (Idc is in mA) and Rs is the Ohmic Resistance.
Applications
The MA4E2532-1113 Series SURMOUNT Low and Medium Barrier Silicon Schottky Ring Quad Diodes are recommended for use in microwave circuits through Ku band frequencies for lower power applications such as mixers, sub-harmonic mixers, detectors and limiters. The HMIC construction facilitates the direct replacement of more fragile beam lead diodes with the corresponding Surmount diode, which can be connected to a hard or soft substrate circuit with solder.
TM
Die Bonding
Die attach for these devices is made simple through the use of surface mount die attach technology. Mounting pads are conveniently located on the bottom surface of these devices, and are opposite for the active junction. The devices are well suited for high temperature solder attachment onto hard substrates. 80Au/20Sn and Sn63/Pb36/Ag2 solders are acceptable for usage. For Hard substrates, we recommend utilizing a vacuum tip and force of 60 to 100 grams applied uniformly to the top surface of the device, using a hot gas bonder with equal heat applied across the bottom mounting pads of the device. When soldering to soft substrates it is recommended to use a lead-tin interface at the circuit board mounting pads. Position the die so that its mounting pads are aligned with the circuit board mounting pads. Reflow the solder paste by applying equal heat to the circuit at both die-mounting pads. The solder joint must Not be made one at a time, creating unequal heat flow and thermal stress. Solder reflow should Not be performed by causing heat to flow through the top surface of the die. Since the HMIC glass is transparent, the edges of the mounting pads can be visually inspected through the die after die attach is completed.
Handling
All semiconductor chips should be handled with care to avoid damage or contamination from perspiration and skin oils. The use of plastic tipped tweezers or vacuum pickups is strongly recommended for individual components. The top surface of the die has a protective polyimide coating to minimize damage. The rugged construction of these Surmount devices allows the use of standard handling and die attach techniques. It is important to note that industry standard electrostatic discharge (ESD) control is required at all times, due to the sensitive nature of Schottky junctions. Bulk handling should insure that abrasion and mechanical shock are minimized.
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ADVANCED: Data Sheets contain information regarding a product M/A-COM is considering for * North America Tel: 800.366.2266 / Fax: 978.366.2266 development. Performance is based on target specifications, simulated results, and/or prototype * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 measurements. Commitment to develop is not guaranteed. * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM has under developVisit www.macom.com for additional data sheets and product information. ment. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in MA-COM Technical Solutions and its affiliates reserve the right to make changes to the volume is not guaranteed.
product(s) or information contained herein without notice.
MA4E2532L-1113, MA4E2532M-1113
SURMOUNTTM Low & Medium Barrier Silicon Schottky Diodes: Ring Quad Series
MA4E2532L-1113 Low Barrier SPICE PARAMETERS
Is (nA)
26
M/A-COM Products
Rev. V3
Rs ()
12.8
N
1.20
Cj0 (pF)
1.0 E-2
M
0.5
Ik (mA)
14
Cjpar (pF)
9.0 E-2
Vj (V)
8.0 E-2
FC
0.5
BV (V)
5.0
IBV (mA)
1.0 E-2
MA4E2532M-1113 Medium Barrier SPICE PARAMETERS (Per Diode)*
Is (nA)
5 E-1
Rs ()
9.6
N
1.20
Cj0 (pF)
1.0 E-2
M
0.5
Ik (mA)
10
Cpar (pF)
9.0 E-2
Vj (V)
8.0 E-2
FC
0.5
BV (V)
5.0
IBV (mA)
1.0 E-2
Spice Parameters (Per Diode) are based on the MA4E2502 Series datasheet.
Circuit Mounting Dimensions (Inches)
0.020 0.020
0.020
0.020
0.013 0.013
0.020
0.020
Ordering Information
Part Number
MA4E2532L-1113W MA4E2532L-1113 MA4E2532L-1113T MA4E2532M-1113W MA4E2532M-1113 MA4E2532M-1113T
Absolute Maximum Ratings 1
Parameter
Operating Temperature
Packaging
Wafer on Frame Die in Carrier Tape/Reel Wafer on Frame Die in Carrier Tape/Reel
Value
-40C to +150C -40C to +150C +175C 20 mA 5V +20 dBm 50 mW Class 0
Storage Temperature Junction Temperature Forward Current Reverse Voltage (10 uA) RC C.W. Incident Power RF & DC Dissipated Power Electrostatic Discharge 2 ( ESD ) Classification
1. Exceeding any of these values may result in permanent damage. 2. Human Body Model 3
ADVANCED: Data Sheets contain information regarding a product M/A-COM is considering for * North America Tel: 800.366.2266 / Fax: 978.366.2266 development. Performance is based on target specifications, simulated results, and/or prototype * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 measurements. Commitment to develop is not guaranteed. * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM has under developVisit www.macom.com for additional data sheets and product information. ment. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in MA-COM Technical Solutions and its affiliates reserve the right to make changes to the volume is not guaranteed.
product(s) or information contained herein without notice.
MA4E2532L-1113, MA4E2532M-1113
SURMOUNTTM Low & Medium Barrier Silicon Schottky Diodes: Ring Quad Series
Schematic
Ct
M/A-COM Products
Rev. V3
Ls
Rs
Rj
Average Schematic Values per Diode
Model Number
MA4E2532L-1113 MA4E2532M-1113
Ls (nH)
0.8 0.8
Rs ()
13.4 9.4
Rj ()
26 / Idc 26 / Idc
Ct (pF)
0.10 0.12
MA4E2532L-1113, MA4E2532M-1113 Equivalent Circuit
4
ADVANCED: Data Sheets contain information regarding a product M/A-COM is considering for * North America Tel: 800.366.2266 / Fax: 978.366.2266 development. Performance is based on target specifications, simulated results, and/or prototype * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 measurements. Commitment to develop is not guaranteed. * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM has under developVisit www.macom.com for additional data sheets and product information. ment. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in MA-COM Technical Solutions and its affiliates reserve the right to make changes to the volume is not guaranteed.
product(s) or information contained herein without notice.

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