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APTC90DDA12T1G
Dual boost chopper Super Junction MOSFET
VDSS = 900V RDSon = 120m max @ Tj = 25C ID = 30A @ Tc = 25C
Application * AC and DC motor control * Switched Mode Power Supplies * Power Factor Correction Features * - Ultra low RDSon - Low Miller capacitance - Ultra low gate charge - Avalanche energy rated - Very rugged Very low stray inductance - Symmetrical design Internal thermistor for temperature monitoring High level of integration
Power Module
* * *
Pins 3/4 must be shorted together
Benefits * Outstanding performance at high frequency operation * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Solderable terminals both for power and signal for easy PCB mounting * Low profile * Each leg can be easily paralleled to achieve a single boost of twice the current capability * RoHS Compliant
Absolute maximum ratings
Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25C Tc = 80C Max ratings 900 30 23 75 20 120 250 8.8 2.9 1940 Unit V A V m W A mJ
August, 2009 1-6 APTC90DDA12T1G - Rev 0
Tc = 25C
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
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APTC90DDA12T1G
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current Test Conditions
VGS = 0V,VDS = 900V VGS = 0V,VDS = 900V
Min Tj = 25C Tj = 125C 2.5
Typ 500 100 3
Max 100 120 3.5 100
Unit A m V nA
VGS = 10V, ID = 26A VGS = VDS, ID = 3mA VGS = 20 V, VDS = 0V
Dynamic Characteristics
Symbol Characteristic Ciss Input Capacitance Coss Output Capacitance Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Total gate Charge Gate - Source Charge Gate - Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGS = 0V ; VDS = 100V f = 1MHz VGS = 10V VBus = 400V ID = 26A Inductive Switching (125C) VGS = 10V VBus = 600V ID = 26A RG = 7.5 Inductive switching @ 25C VGS = 10V ; VBus = 600V ID = 26A ; RG = 7.5 Inductive switching @ 125C VGS = 10V ; VBus = 600V ID = 26A ; RG = 7.5 Min Typ 6.8 0.33 270 32 115 70 20 400 25 1.5 0.75 2.1 0.85 mJ ns nC Max Unit nF
mJ
Chopper diode ratings and characteristics
Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage IF = 30A IF = 60A IF = 30A IF = 30A VR = 800V di/dt=200A/s Test Conditions VR=1200V Tj = 25C Tj = 125C Tc = 80C Min 1200 Typ Max 100 500 30 2.6 3.2 1.8 300 380 360 1700 3.1 V
August, 2009 2-6 APTC90DDA12T1G - Rev 0
Unit V A A
Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C
trr Qrr
Reverse Recovery Time Reverse Recovery Charge
ns nC
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APTC90DDA12T1G
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight CoolMOS diode 4000 -40 -40 -40 2.5 Min Typ Max 0.50 1.2 150 125 100 4.7 80 Unit C/W V C N.m g
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
To heatsink
M4
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol R25 R25/R25 B25/85 B/B Characteristic Resistance @ 25C T25 = 298.15 K TC=100C
RT = R25 1 1 RT: Thermistor value at T exp B25 / 85 T - T 25
T: Thermistor temperature
Min
Typ 50 5 3952 4
Max
Unit k % K %
SP1 Package outline (dimensions in mm)
See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com
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3-6
APTC90DDA12T1G - Rev 0
August, 2009
APTC90DDA12T1G
Typical CoolMOS performance Curve
0.6 Thermal Impedance (C/W) 0.5 0.4 0.3 0.2 0.1 Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.9 0.7 0.5 0.3 0.1 0.05 Single Pulse
0 0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics
VGS=20, 8V
80
6V
BVDSS, Drain to Source Breakdown Voltage
120 ID, Drain Current (A)
Breakdown Voltage vs Temperature 1000 975 950 925 900 25 50 75 100 125 TJ, Junction Temperature (C) DC Drain Current vs Case Temperature 35 ID, DC Drain Current (A) 30 25 20 15 10 5 0 25 50 75 100 125 TC, Case Temperature (C) 150
5V
40
0 0 5 10 15 VDS, Drain to Source Voltage (V) Maximum Safe Operating Area 1000 ID, Drain Current (A) 20
100
limited by RDSon
100 s
10
10 ms
1
Single pulse TJ=150C TC=25C 1 10 100 1000
0.1 VDS, Drain to Source Voltage (V) Capacitance vs Drain to Source Voltage VGS, Gate to Source Voltage (V) 100000 C, Capacitance (pF) 10000 1000 100 10 1 0 25 50 75 100 125 150 175 200 VDS, Drain to Source Voltage (V) Crss Ciss 10
Gate Charge vs Gate to Source Voltage VDS=400V ID=26A TJ=25C
Coss
6 4 2 0 0 50 100 150 200 Gate Charge (nC) 250 300
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4-6
APTC90DDA12T1G - Rev 0
August, 2009
8
APTC90DDA12T1G
250 200
ZVS VDS=600V D=50% RG=7.5 TJ=125C TC=75C
RDS(on), Drain to Source ON resistance (Normalized)
Operating Frequency vs Drain Current
ON resistance vs Temperature 3.0 2.5 2.0 1.5 1.0 0.5 25 50 75 100 125 150 TJ, Junction Temperature (C) Switching Energy vs Gate Resistance
Frequency (kHz)
150 100 50 0 10
ZCS
Hard switching
12.5
15
17.5
20
22.5
25
ID, Drain Current (A)
Switching Energy vs Current 4 Eon and Eoff (mJ) 3 2
Eoff VDS=600V RG=7.5 TJ=125C L=100H
4 Switching Energy (mJ)
Eon
3
Eoff VDS=600V ID=26A TJ=125C L=100H
Eon
2
1 0 5 10 15 20 25 30 ID, Drain Current (A) 35 40
1
0 5 10 15 20 25 30 35 Gate Resistance (Ohms)
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5-6
APTC90DDA12T1G - Rev 0
August, 2009
APTC90DDA12T1G
Typical Chopper diode performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 1.4 Thermal Impedance (C/W) 1.2 1 0.8 0.6 0.4 0.2 0.3 0.1 0.05 0.0001 0.001 Single Pulse 0.9 0.7 0.5
0 0.00001
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds) Forward Current vs Forward Voltage trr, Reverse Recovery Time (ns) 80 IF, Forward Current (A)
TJ=125C
Trr vs. Current Rate of Charge
500 400 300
45 A TJ=125C VR=800V
60
40
200 100 0 0 200 400 600
30 A 15 A
20
TJ=25C
0 0.0 1.0 2.0 3.0 4.0 VF, Anode to Cathode Voltage (V) QRR, Reverse Recovery Charge (C) QRR vs. Current Rate Charge
TJ=125C VR=800V
800 1000 1200
-diF/dt (A/s) IRRM vs. Current Rate of Charge IRRM, Reverse Recovery Current (A)
4
30 25 20 15 10 5 0 0 200 400 600 800
45 A TJ=125C VR=800V
45 A
30 A 15 A
3
30 A
2
15 A
1
0
0
200
400
600
800
1000 1200
1000 1200
-diF/dt (A/s)
-diF/dt (A/s)
200 160 120 80 40 0 1
Capacitance vs. Reverse Voltage
Max. Average Forward Current vs. Case Temp. 50 40 IF(AV) (A) 30 20 10 0
Duty Cycle = 0.5 TJ=175C
C, Capacitance (pF)
10 100 VR, Reverse Voltage (V)
1000
25
50
75
100
125
150
175
Case Temperature (C)
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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6-6
APTC90DDA12T1G - Rev 0
"COOLMOSTM comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trademark of Infineon Technologies AG".
August, 2009

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