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 INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SC2481
DESCRIPTION *Collector-Emitter Breakdown Voltage: V(BR)CEO= 150V(Min) *High Current Capability *High Collector Power Dissipation *Complement to Type 2SA1021
APPLICATIONS *Color TV vertical deflection output applications. *Color TV class B sound output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL PARAMETER VALUE
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current-Continuous
w
ww
scs .i
UNIT 150 V 150 V 6 V 1.5 A 1.0 A 20 W
.cn mi e
IB
B
Base Current-Continuous Collector Power Dissipation @ TC=25
PC Collector Power Dissipation @ Ta=25 TJ Junction Temperature 1.2
150
Tstg
Storage Temperature Range
-55~150
isc Websitewww.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN
2SC2481
TYP.
MAX
UNIT
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC= 10mA; IB= 0
150
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 0.5A; IB= 50mA
1.5
V
VBE(on)
Base-Emitter On Voltage
IC= 5mA; VCE= 5V
0.8
V
ICBO
Collector Cutoff Current
VCB= 150V; IE= 0
1.0
A
IEBO
Emitter Cutoff Current
VEB= 6V; IC= 0
1.0
A
hFE
DC Current Gain
IC= 0.2A; VCE= 5V
fT
Current-Gain--Bandwidth Product
COB
Output Capacitance
hFE Classifications R 60-120 O 100-200
w w
Y 160-320
scs .i w
IC= 0.2A; VCE= 5V
IE= 0; VCB= 10V, ftest= 1MHz
.cn mi e
60 20
320
100
MHz
13
pF
isc Websitewww.iscsemi.cn
2


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