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INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2481 DESCRIPTION *Collector-Emitter Breakdown Voltage: V(BR)CEO= 150V(Min) *High Current Capability *High Collector Power Dissipation *Complement to Type 2SA1021 APPLICATIONS *Color TV vertical deflection output applications. *Color TV class B sound output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous w ww scs .i UNIT 150 V 150 V 6 V 1.5 A 1.0 A 20 W .cn mi e IB B Base Current-Continuous Collector Power Dissipation @ TC=25 PC Collector Power Dissipation @ Ta=25 TJ Junction Temperature 1.2 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC2481 TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 150 V VCE(sat) Collector-Emitter Saturation Voltage IC= 0.5A; IB= 50mA 1.5 V VBE(on) Base-Emitter On Voltage IC= 5mA; VCE= 5V 0.8 V ICBO Collector Cutoff Current VCB= 150V; IE= 0 1.0 A IEBO Emitter Cutoff Current VEB= 6V; IC= 0 1.0 A hFE DC Current Gain IC= 0.2A; VCE= 5V fT Current-Gain--Bandwidth Product COB Output Capacitance hFE Classifications R 60-120 O 100-200 w w Y 160-320 scs .i w IC= 0.2A; VCE= 5V IE= 0; VCB= 10V, ftest= 1MHz .cn mi e 60 20 320 100 MHz 13 pF isc Websitewww.iscsemi.cn 2 |
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