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 SA7527
POWER FACTOR CORRECTION CONTROLLER OF CRITICAL DUCTING
DESCRIPTION
The SA7527 provides simple and high performance active power factor correction. The SA7527 is optimized for electronic ballasts and low power and high-density power supplies which require minimum board size, reduced external components and low power dissipation. Because the R/C filter is included in the current sense block, the external R/C filter is not necessary. Special circuitry has also been added to prevent no load runaway conditions. Regardless of the supply voltage, the output drive clamping circuit limits the overshoot of the power MOSFET gate drive. It greatly enhances the system reliability.
SOP-8-225-1.27 DIP-8-300-2.54
FEATURES
* Internal start-up timer * Internal R/C filter eliminates the need for an external R/C filter * Very precise adjustable output over voltage protection * Zero current detector * One quadrant multiplier * Trimmed 1.5% internal band gap reference * Under voltage lockout with 3V of hysteresis * Totem pole output with high state clamp * Low start-up and operating current * 8-pin DIP or 8-pin SOP * Electronic ballast * SMPS Device SA7527 SA7527S Package DIP-8-300-2.54 SOP-8-225-1.27
ORDERING INFORMATION
APPLICATIONS
BLOCK DIAGRAM
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
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2005.07.22 Page 1 of 8
SA7527
ABSOLUTE MAXIMUM RATINGS (Tamb=25C)
Characteristics Supply Voltage Peak Drive Output Current Driver Output Clamping Diodes VO>VCC or VO<-0.3V Detector Clamping Diodes Error Amp, Multiplier And Comparator Input Voltage Operating Junction Temperature Operating Temperature Range Storage Temperature Range Power Dissipation Symbol VCC IOH, IOL Iclamp Idet Vin Tj Topr Tstg Pd Rating 30 500 10 10 -0.3 to 6 150 -25 to 125 -65 to 150 0.8 Unit V mA mA mA V C C C W
TEMPERATURE CHARACTERISTICS
Characteristics Temperature Stability For Reference Voltage (Vref) Temperature Stability For Multiplier Gain (K) Symbol Vref K/T Min. --Typ. 20 -0.2 Max. --Unit mV %/C
ELECTRICAL CHARACTERISTICS (Unless otherwise stated, VCC=14V, -25C Tamb125C)
Characteristics Under Voltage Lockout Section Start Threshold Voltage UVLO Hysteresis Supply Current Section Start-Up Supply Current Operating Supply Current Operating Current OVP Dynamic Operating Supply Current Error Amplifier Section Voltage Feedback Input Threshold Line Regulation Temperature Stability Of Vref (note) Input Bias Current Output Source Current Output Sink Current Output Upper Clamp Voltage (note) Output Lower Clamp Voltage (note) Vref Vref1 Vref3 Ib(ea) Isource Isink Veao(H) Veao(L) Iref=0mA, Tamb=25C -25Tamb125C 14VVCC25V -25Tamb125C -Vm2=4V Vm2=4V Isource=0.1mA Isink=0.1mA 2.465 2.44 ---0.5 -2 2 --2.5 2.5 0.1 20 --4 4 6 2.25 2.535 2.56 10 -0.5 ----V V mV mV A mA mA V V Ist ICC ICC(OVP) IDCC VCC=Vth(st)-0.2 Output not switching Vinv=3V 50kHz, CI=1nF 10 ---60 3 1.7 4 100 6 4 8 A mA mA mA Vth (st) HY (st) VCC increasing -10.5 2 11.5 3 12.5 4 V V Symbol Test condition Min. Typ. Max. Unit
(To be continued)
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
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SA7527
(Continued) Characteristics Large Signal Open Loop G gain (note) Power Supply Rejection Ratio (note) Unity Gain Bandwidth (note) Slew Rate (note) Multiplier Section Input Bias Current (pin3) M1 Input Voltage Range (pin3) M2 Input Voltage Range (pin2) Multiplier Gain (note) Maximum Multiplier Output Voltage Temperature Stability Of K (note) Current Sense Section Input Offset Voltage (note) Input Bias Current Current Sense Delay To Output (note) Zero Current Detect Section Input Voltage Threshold Detect Hysteresis Input Low Clamp Voltage Input High Clamp Voltage Input Bias Current Input High/Low Clamp Diode Current (note) Output Section Output Voltage High Output Voltage Low Rising Time (note) Falling Time (note) Maximum Output Voltage Output Voltage With UVLO Activated Restart Timer Section Restart Time Delay Over Voltage Protection Section Soft OVP Detecting Current Dynamic OVP Detecting Current Static OVP Threshold Voltage
pin 4 _ threshold Vm1x( Vm2 - Vref )
Symbol Gv PSRR GBW SR Ib(m) Vm1 Vm2 K Vomax(m) K/T Vio(cs) Ib(cs) td(cs) Vth(det) HY(det) Vclamp(I) Vclamp(h) Ib(det) Iclamp(d) --
Test condition
Min. 60 60 ---0.5 0 Vref 0.36 1.65 --10 -1 -1.7 0.2 0.45 6.5 -1 --
Typ. 80 80 1 0.6 ---0.44 1.8 -0.2 3 -0.1 200 2 0.5 0.75 7.2 -0.1 --
Max. ----0.5 3.8 Vref+2.5 0.52 1.95 -10 1 500 2.3 0.8 1 7.9 1 3
Unit dB dB MHz V/s A V V 1/V V %/C mV A ns V V V V A mA
14VVCC25V -----Vm1=1V, Vm2=3.5V Vinv=0V, Vm1=4V -25Tamb125C Vm1=0V, Vm2=2.2V 0VVcs1.7V -Vdet increasing -Idet=-100A Idet=3mA 1VVdet5V --
Voh Voi tr tf Vomax(o) Vomin(o)
IO=-10mA IO=10mA CI=1nF CI=1nF VCC=20V, IO=100A VCC=5V, IO=100A
10.5 ---12 --
11 0.8 130 50 14 --
-1 200 120 16 1
V V ns ns V V s A A V
td(rst) Isovp Idovp Vovp
Vm1=1V, Vm2=3.5V --Vinv=2.7V
-25 35 2.1
150 30 40 2.25
-35 45 2.4
Note: These parameters, although guaranteed, are not 100% tested in production. Multiplier gain: k =
( Vm1 = Vpin3, Vm 2 = Vpin2)
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
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REV:1.0
2005.07.22 Page 3 of 8
SA7527
PIN CONFIGURATIONS
SA7527
PIN DESCRIPTIONS
Pin no. 1 Pin name INV Description Inverting input of the error amplifier. The output of the boost converter should be resistively divided to 2.5V and connected to this pin. 2 3 EA_OUT MULT The output of the error amplifier. A feedback compensation network is placed between this pin and the INV pin. Input to the multiplier stage. The full-wave rectified AC voltage is divided to less than 2V and is connected to this pin. Input of the PWM comparator. The MOSFET current is sensed by a 4 5 6 7 8 CS Idet GND OUT VCC resistor and the resulting voltage is applied to this pin. An internal R/C filter is included to reject any high frequency noise. Zero current detection input. The ground potential of all the pins. Gate driver output. The push pull output stage is able to drive the Power MOSFET with peak current of 500mA. Supply voltage of driver and control circuits.
ELECTRICAL CHARACTERISTICS CURVES
Figure 1. Error Amplifier Output Voltage vs Current Sensing Threshold Figure 2. Multiplier Input Voltage vs Current Sensing Threshold
V 1.5 1= .0V Vm =1 m1 V
(To be continued)
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
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SA7527
(Continued) Figure 3. Supply Current vs Supply Voltage
0.015 0.012 0.009 0.006 0.003 0.000 0
10
20
30
40
50
Supply Voltage (V)
TEST CIRCUIT
TEST SPECIFICATION (Unless otherwise specified, VDC2=14V) Parameter Vth(st) HY(st) I(st) I(cc) Icc(ovp) Idcc Vref Vref Ib(ea) I(source) I(sink) Veao(H) Veao(L) Ib(m) Switches S2,S3,S4,S5 S2,S3,S4,S5 S2,S3,S4,S5 S2,S3,S4,S5 S1 S1,S3,S4,S7,S8 S9 S9 S1 S1,S2 S1,S2 S1 S1 S3 Test conditions VDC3=3,VDC4=1,VDC6=0 VDC3=3,VDC4=1,VDC6=0 VDC3=3,VDC4=1,VDC6=0 VDC3=3,VDC4=1,VDC6=0 VDC1=3 VDC6=0 --VDC1 change VDC1=0,VDC3=4 VDC1=3,VDC3=4 VDC1=0 VDC1=3 -Test point B B B B B B G G G A A A A E VDC2=14V 25V ---The source current of A is 1mA The sink current of A is 1mA VDC4: 0~4V (To be continued) Remark VDC2 increase Following above, decrease the VDC2 until C level changed VDC2= Vth(st)-0.2 --Input 50kHz/2V square wave to F
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SA7527 REV:1.0 2005.07.22 Page 5 of 8
SA7527
(Continued) Parameter Switches Test conditions Test point Remark Increasing the VDC6 and VDC4, Vm1 S1,S3,S4,S5 VDC1=2, initialize VDC4,VDC6 low level, enable C high level E enables the C changes until the VDC4 change do not affect the C level. VDC1=2,VDC4=1, Vm2 S1,S2,S3,S4,S5 C high level. initialize A Increasing the VDC6 and VDC3 level, enables the C changes until the VDC3 change do not affect the C level. Increase the VDC6 until C level K S1,S2,S3,S4 VDC1=2V,VDC3=3.5,VDC4=1V -changed. K=VDC6/(VDC3*VDC4) Vomax Ib(cs) Vth(det) HY(det) Vclamp(L) Vclamp(H) Ib(det) Voh Vol tr tf Vomax(o) Vomin(o) td(rst) Isovp Idovp Vovp tf S1,S3,S4,S5 S4 S1,S2,S3,S4,S6 S1,S2,S3,S4,S6 --S6 S1,S2,S3,S4,S5 S1,S2,S3,S4,S5 S1,S2,S3,S4,S7 S1,S2,S3,S4,S7 S1,S2,S3,S4,S5 S1,S2,S3,S4,S5 S1,S2,S3,S5 S1,S3,S4,S5 S1,S3,S4,S5 S1,S2,S3,S4,S5 S1,S2,S3,S4,S7 VDC1=2V, VDC4=4 -VDC1=2V, VDC3=3,VDC4=1, VDC6=0, VDC1=2V, VDC3=3,VDC4=1, VDC6=0, ---VDC1=2,VDC6=0 VDC1=2,VDC6=2 VDC1=2,VDC6=0 VDC1=2,VDC6=0 VDC1=2,VDC2=20 VDC1=2,VDC2=5 VDC1=2,VDC3=3.5,VDC4=1 VDC1=2,VDC6=0 VDC1=2,VDC6=0 VDC1=2.7,VDC4=1,VDC6=0 VDC1=2,VDC6=0 D D G G G G G C C C C C C C A A A C Increase the VDC6 until C level changed. VDC6:0~1.7V Increase the VDC5 until C level changed. Following above, the VDC5 decreases until C level changed. Input 100A to G Output 3mA from G VDC5:1~5V Output 10mA from C Input 10mA to C Input 50kHz/2V square wave to F Input 50kHz/2V square wave to F Output 100A from C Output 100A from C Input 10kHz, 10s, 2V narrow pulse to D (note1) Input static current to A, and enables C low level. Input dynamic current to A, and enable C low level. Increase the VDC3 until C level changed. Input 50kHz/2V square wave to F
VDC3, VDC6 low level, enable
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
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REV:1.0
2005.07.22 Page 6 of 8
SA7527
TYPICAL APPLICATION CIRCUIT
Note:The circuit and parameters are reference only, please set the parameters of the real application circuit based on the real test .
APPLICATION CIRCUIT COMPONENTS LIST
Part Number R1 R2 R3 R5 R6 R7 R8 R9 VR1 C1 C2 C3,4 C5 C6 C7 C8 C9 BD1 D1,3 D2 LF1 T1 Q1 F1 V1 NTC Value 1.8M 18k 120k 22k 10 3.0 1M 6k 103 47nF, 275vac 100nF, 275vac 2200pF, 3000V 0.1F, 630V 47F, 35V 1F 22F, 450V 1nF, 25V 600V/4A 75V, 150mA 600V, 1A 45mH 1.76mH(122T:10T) 500V, 2.3A 250V, 3A 470V 10 Note 1/4W 1/4W 1W 1/4W 1/4W 1W 1/4W 1/4W Variable resistor Box-Cap Box-Cap Y-Cap Miller-Cap Electrolytic MLCC Electrolytic Ceramic Bridge Diode IN4148 BYV26C Line Filter EI2219 FQPF4N50 Fuse 471 10D09 Manufacturer Fairchild -
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
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REV:1.0
2005.07.22 Page 7 of 8
SA7527
PACKAGE OUTLINE
DIP-8-300-2.54 UNIT: mm
6.35 0.25
SOP-8-225-1.27
3.00MIN
4.36MAX
7.62 0.30
0.250.05
UNIT: mm
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http: www.silan.com.cn
REV:1.0
2005.07.22 Page 8 of 8


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