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BAT86
Small-Signal Diode Schottky Diode
Features
For general purpose applications. This diode features low turn-on voltage. This device is protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast switching and low logic level applications. This diode is also available in the MiniMELF case with type designation BAS86.
Mechanical Data
Case: DO-35 Glass Case Weight: approx. 0.13g
Maximum Ratings and Thermal Characteristics
(Ratings at 25oC ambient temperature unless otherwise specified.)
Parameter Continuous reverse voltage Forward continuous current at Tamb=25oC Repetitive peak forward current at tp<1s, <0.5, Tamb=25oC Power dissipation at Tamb=25oC Thermal resistance junction to ambient air Junction temperature Ambient operating temperature range Storage temperature range
Symbol VR IF IFRM Ptot RJA Tj Tamb TS
Value 50 200 500 200 300
(1)
Unit Volts mA mA mW
o
(1)
(1)
(1)
C/W
o
125 -65 to +125 -65 to +150
C C C
o
o
Electrical Characteristics
(TJ=25oC unless otherwise noted.)
Parameter Reverse breakdown voltage Leakage current
Symbol V(BR)R IR
Test Condition IR=10uA (pulsed) VR=40V IF=0.1mA IF=1mA IF=10mA IF=30mA IF=100mA VR=1V, f=1MHz IF=10mA, IR=10mA, to IR=1mA
Min. 50 -
Typ. 0.3 0.200 0.275 0.365 0.460 0.700 -
Max. 5.0 0.300 0.380 0.450 0.600 0.900 8 5
Unit Volts uA
Forward voltage pulse test tp<300us, <2%
VF
Volt
Capacitance Reverse recovery time
Notes:
Ctot trr
pF ns
1. Valid provided that leads at a distance of 4mm from case are kept at ambient temperature.
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