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| 2SB1424 Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free D D1 A PNP Silicon Medium Power Transistor E1 b1 1.BASE SOT-89 2.COLLECTOR 3. EMITTER L b e e1 C FEATURES Symbol Dimensions In Millimeters Min 1.400 0.320 0.360 0.350 4.400 1.400 2.300 3.940 1.500TYP 2.900 0.900 3.100 1.100 Max 1.600 0.520 0.560 0.440 4.600 1.800 2.600 4.250 Min E Dimensions In Inches Max 0.063 0.020 0.022 0.017 0.181 0.071 0.102 0.167 0.060TYP 0.114 0.035 0.122 0.043 Power dissipation : 600 mW Temp.=25 PCM Collector current : -3 A ICM Collector-base voltage V V(BR)CBO : -20 Operating and storage junction temperature range TJ Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance A b b1 c D D1 E E1 e e1 L 0.055 0.013 0.014 0.014 0.173 0.055 0.091 0.155 Tamb=25 Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) VCE(sat) Test unless otherwise specified conditions MIN TYP MAX UNIT V V V Ic=-50 A,IE=0 Ic=-1mA,IB=0 IE=-50 A,IC=0 VCB=-20V,IE=0 VEB=-5V,IC=0 VCE=-2V,IC=-100mA IC=-2A,IB=-100mA VCE=-2V,IC=-500mA,f=100MHz VCB=-10V,IE=0,f=1MHz -20 -20 -6 -0.1 -0.1 120 390 -0.5 240 35 A A V MHz pF fT Cob CLASSIFICATION OF hFE(1) Rank Range Marking Q 120-270 AEQ R 180-390 AER http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 1 of 2 2SB1424 Elektronische Bauelemente PNP Silicon Medium Power Transistor Electrical characteristic curves http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 2 of 2 |
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