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| SI1305EDL New Product Vishay Siliconix P-Channel 1.8-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.280 @ VGS = -4.5 V -8 8 0.380 @ VGS = -2.5 V 0.530 @ VGS = -1.8 V ID (A) "0.92 "0.79 "0.67 SOT-323 SC-70 (3-LEADS) G 1 Marking Code 3 D LE XX YY Lot Traceability and Date Code S 2 Part # Code Top View ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a 150 C) Pulsed Drain Current Continuous Diode Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C ID TA = 70_C IDM IS PD TJ, Tstg -0.28 0.34 0.22 -55 to 150 Symbol VDS VGS 5 secs -8 Steady State Unit V "8 "0.92 "0.74 "3 -0.24 0.29 "0.86 "0.69 A W 0.19 _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1" x 1" FR4 Board. Document Number: 71095 S-99399--Rev. A, 29-Nov-99 www.siliconix.com S FaxBack 408-970-5600 t v 5 sec Steady State Steady State Symbol RthJA RthJF Typical 315 360 285 Maximum 375 430 340 Unit _C/W 1 Si1305DL Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta VGS(th) IGSS IDSS ID(on) VDS = VGS, ID = -250 mA VDS = 0 V, VGS = "4.5 V VDS = -6.4 V, VGS = 0 V VDS = -6.4 V, VGS = 0 V, TJ = 70_C VDS = -5 V, VGS = -4.5 V VGS = -4.5 V, ID = -1 A Drain-Source On-State Resistancea DiS OS Ri rDS(on) VGS = -2.5 V, ID = -0.5 A VGS = -1.8 V, ID = -0.3 A Forward Transconductancea Diode Forward Voltagea gfs VSD VDS = -5 V, ID = -1 A IS = -1 A, VGS = 0 V -3 0.230 0.315 0.440 3.5 -1.2 0.280 0.380 0.530 S V W -045 "1 -1 -5 V mA mA A Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = -1 A, di/dt = 100 A/ms VDD = -4 V, RL = 4 W 4 V, ID ^ -1 A, VGEN = -4.5 V RG = 6 W 1A 4 5 V, VDS = -4 V, VGS = -4.5 V ID = -1 A 4V 4 5 V, 1 2.6 0.54 0.52 206 431 1350 1000 500 330 690 2160 1600 800 ns 4 nC C Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 8 VGS = 4.5 V 4V 3.5 V 6 I D - Drain Current (A) I D - Drain Current (A) 3V 4 5 6 Transfer Characteristics TC = -55_C 25_C 125_C 3 4 2.5 V 2V 2 1.5 V 1V 0 0 0.5 1.0 1.5 2.0 2.5 3.0 2 1 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VDS - Drain-to-Source Voltage (V) www.siliconix.com S FaxBack 408-970-5600 VGS - Gate-to-Source Voltage (V) Document Number: 71095 Pending--Rev. A, 09-Nov-99 2 SI1305EDL New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On Resistance vs. Drain Current 1.4 r DS(on) - On-Resistance ( W ) 1.2 C - Capacitance (pF) VGS = 1.8 V 1.0 0.8 0.6 VGS = 2.5 V 0.4 0.2 0 0 1 2 3 4 5 6 7 VGS = 4.5 V 350 300 250 200 150 100 50 0 0 2 4 6 8 Crss Coss Ciss Vishay Siliconix Capacitance ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 8 V GS - Gate-to-Source Voltage (V) VDS = 4 V ID = 1 A 6 1.6 On Resistance vs. Junction Temperature VGS = 4.5 V ID = 1 A 1.2 4 r DS(on) - On-Resistance (W) (Normalized) 2 3 4 5 0.8 2 0.4 0 0 1 Qg - Total Gate Charge (nC) 0 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) Source Drain Diode Forward Voltage 10 On Resistance vs. Gate to Source Voltage 1.0 I S - Source Current (A) 1 r DS(on) - On-Resistance ( W ) TJ = 150_C 0.8 0.6 ID = 1 A 0.1 TJ = 25_C 0.01 0.4 0.2 0.001 0 0.2 0.4 0.6 0.8 1.0 1.2 VSD - Source-to-Drain Voltage (V) 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VGS - Gate-to-Source Voltage (V) Document Number: 71095 Pending--Rev. A, 09-Nov-99 www.siliconix.com S FaxBack 408-970-5600 3 Si1305DL Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Gate Current vs. Gate Source Voltage 400 1000 100 300 IGSS ( m A) 10 IG ( m A) 1 IG (mA) @ 150_C 0.1 0.01 IG (mA) @ 25_C 0.001 0 0 2 4 6 8 VGS - Gate-to-Source Voltage (v) 0.0001 0.1 1 VGS - Gate-to-Source Voltage (v) 8 Gate-Source Voltage vs. Gate-Current 200 IGSS (mA) @ T = 25_C 100 Threshold Voltage 0.3 20 Single Pulse Power 0.2 V GS(th) Variance (V) ID = 250 mA 0.1 Power (W) 16 12 TA = 25_C 8 0.0 -0.1 4 -0.2 -50 -25 0 25 50 75 100 125 150 0 10-3 10-2 10-1 1 10 100 600 TJ - Temperature (_C) Time (sec) Normalized Thermal Transient Impedance, Junction to Ambient 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 Notes: 0.1 0.1 0.05 t1 PDM 0.02 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 360_C/W Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (sec) 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 www.siliconix.com S FaxBack 408-970-5600 4 Document Number: 71095 Pending--Rev. A, 09-Nov-99 SI1305EDL New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction to Foot 2 1 Duty Cycle = 0.5 Vishay Siliconix Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec) 1 10 Document Number: 71095 Pending--Rev. A, 09-Nov-99 www.siliconix.com S FaxBack 408-970-5600 5 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 |
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