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HM52Y25165B-B6 HM52Y25405B-B6
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Description Features
* * * * * * * * * * *
256M SDRAM 100 MHz 4-Mword x 16-bit x 4-bank /16-Mword x 4-bit x 4-bank
E0146H10 (Ver. 1.0) Preliminary May. 28, 2001
The HM52Y25165B is a 256-Mbit SDRAM organized as 4194304-word x 16-bit x 4 bank. The HM52Y25405B is a 256-Mbit SDRAM organized as 16777216-word x 4-bit x 4 bank. All inputs and outputs are referred to the rising edge of the clock input. It is packaged in standard 54-pin plastic TSOP II.
2.5 V power supply Clock frequency: 100MHz (max) Single pulsed RAS 4 banks can operate simultaneously and independently Burst read/write operation and burst read/single write operation capability Programmable burst length: 1/2/4/8 2 variations of burst sequence Sequential (BL = 1/2/4/8) Interleave (BL = 1/2/4/8) Programmable CAS latency: 2, 3 Byte control by DQM : DQM (HM52Y25405B) : DQMU/DQML (HM52Y25165B) Refresh cycles: 8192 refresh cycles/64 ms 2 variations of refresh Auto refresh Self refresh
Preliminary: The Specifications of this device are subject to change without notice. Please contact to your nearest Elpida Memory, Inc. regarding specifications. Elpida Memory, Inc. is a joint venture DRAM company of NEC Corporation and Hitachi, Ltd.
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This product became EOL in April, 2004.
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HM52Y25165B/ HM52Y25405B-B6
Ordering Information
Type No. Frequency 100 MHz 100 MHz CAS latency 3 3 Package 400-mil 54-pin plastic TSOP II (TTP-54D)
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HM52Y25165BTT-B6*
1 1
HM52Y25405BTT-B6*
Note:
1. 66 MHz operation at CAS latency = 2.
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Preliminary Data Sheet E0146H10 2
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HM52Y25165B/ HM52Y25405B-B6
Pin Arrangement (HM52Y25165B)
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Pin Description
Pin name A0 to A12, BA0, BA1 Function Address input Row address DQ0 to DQ15 CS RAS CAS Data-input/output Chip select
54-pin TSOP VCC DQ0 VCCQ DQ1 DQ2 VSSQ DQ3 DQ4 VCCQ DQ5 DQ6 VSSQ DQ7 VCC DQML WE CAS RAS CS BA0 BA1 A10 A0 A1 A2 A3 VCC 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 54 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 VSS DQ15 VSSQ DQ14 DQ13 VCCQ DQ12 DQ11 VSSQ DQ10 DQ9 VCCQ DQ8 VSS NC DQMU CLK CKE A12 A11 A9 A8 A7 A6 A5 A4 VSS
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Column address
Bank select address BA0/BA1 (BS)
Row address strobe command Column address strobe command
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(Top view) WE A0 to A12 A0 to A8 CLK CKE VCC VSS VCCQ VSS Q NC Preliminary Data Sheet E0146H10
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Pin name Function DQMU/DQML
Write enable Input/output mask
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Clock input Clock enable Power for internal circuit Ground for internal circuit Power for DQ circuit Ground for DQ circuit No connection 3
HM52Y25165B/ HM52Y25405B-B6
Pin Arrangement (HM52Y25405B)
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Pin Description
Pin name A0 to A12, BA0, BA1 Function Address input Row address DQ0 to DQ3 CS RAS CAS Data-input/output Chip select 4
54-pin TSOP VCC NC VCCQ NC DQ0 VSSQ NC NC VCCQ NC DQ1 VSSQ NC VCC NC WE CAS RAS CS BA0 BA1 A10 A0 A1 A2 A3 VCC 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 54 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 VSS NC VSSQ NC DQ3 VCCQ NC NC VSSQ NC DQ2 VCCQ NC VSS NC DQM CLK CKE A12 A11 A9 A8 A7 A6 A5 A4 VSS
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Column address
Bank select address BA0/BA1 (BS)
Row address strobe command Column address strobe command
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(Top view) WE A0 to A12 A0 to A9, A11 DQM CLK CKE VCC VSS VCCQ VSS Q NC Preliminary Data Sheet E0146H10
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Pin name Function
Write enable Input/output mask Clock input
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Clock enable Power for internal circuit Ground for internal circuit Power for DQ circuit Ground for DQ circuit No connection
HM52Y25165B/ HM52Y25405B-B6
Block Diagram (HM52Y25165B)
Sense amplifier & I/O bus
Sense amplifier & I/O bus
Sense amplifier & I/O bus
Memory array
Memory array Column decoder
Memory array Column decoder
Sense amplifier & I/O bus
Column decoder
Column decoder
Preliminary Data Sheet E0146H10 5
DQMU /DQML
CLK
CKE
RAS
CAS
WE
CS
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Column address counter Row decoder Bank 0 8192 row X 512 column X 16 bit
A0 to A12, BA0, BA1 A0 to A12, BA0, BA1 A0 to A8
Column address buffer
Row address buffer
Refresh counter
Row decoder
Row decoder
Row decoder
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Memory array
Bank 1
Bank 2
Bank 3
8192 row X 512 column X 16 bit
8192 row X 512 column X 16 bit
8192 row X 512 column X 16 bit
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Input buffer Output buffer DQ0 to DQ15
Control logic & timing generator
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HM52Y25165B/ HM52Y25405B-B6
Block Diagram (HM52Y25405B)
Sense amplifier & I/O bus
Sense amplifier & I/O bus
Sense amplifier & I/O bus
Memory array
Memory array Column decoder
Memory array Column decoder
Sense amplifier & I/O bus
Column decoder
Column decoder
Preliminary Data Sheet E0146H10 6
DQM
CLK
CKE
RAS
CAS
WE
CS
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Column address counter Row decoder Bank 0 8192 row X 2048 column X 4 bit
A0 to A12, BA0, BA1 A0 to A12, BA0, BA1 A0 to A9, A11
Column address buffer
Row address buffer
Refresh counter
Row decoder
Row decoder
Row decoder
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Memory array
Bank 1
Bank 2
Bank 3
8192 row X 2048 column X 4 bit
8192 row X 2048 column X 4 bit
8192 row X 2048 column X 4 bit
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Input buffer Output buffer DQ0 to DQ3
Control logic & timing generator
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HM52Y25165B/ HM52Y25405B-B6
Pin Functions
CLK (input pin): CLK is the master clock input to this pin. The other input signals are referred at CLK rising edge. CS (input pin): When CS is Low, the command input cycle becomes valid. When CS is High, all inputs are ignored. However, internal operations (bank active, burst operations, etc.) are held. RAS, CAS, and WE (input pins): Although these pin names are the same as those of conventional DRAMs, they function in a different way. These pins define operation commands (read, write, etc.) depending on the combination of their voltage levels. For details, refer to the command operation section. A0 to A12 (input pins): Row address (AX0 to AX12) is determined by A0 to A12 level at the bank active command cycle CLK rising edge. Column address (AY0 to AY8; HM52Y25165B AY0 to AY9, AY11; HM52Y25405B) is determined by A0 to A8, A9 or A11 (A8; HM52Y25165B, A9, A11; HM52Y25405B) level at the read or write command cycle CLK rising edge. And this column address becomes burst access start address. A10 defines the precharge mode. When A10 = High at the precharge command cycle, all banks are precharged. But when A10 = Low at the precharge command cycle, only the bank that is selected by BA0/BA1 (BS) is precharged. For details refer to the command operation section.
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BA0/BA1 (input pin): BA0/BA1 are bank select signal (BS). The memory array of the HM52Y25165B, HM52Y25405B is divided into bank 0, bank 1, bank 2 and bank 3. HM52Y25165B contain 8192-row x 512column x 16-bit. HM52Y25405B contain 8192-row x 2048-column x 4-bit. If BA0 is Low and BA1 is Low, bank 0 is selected. If BA0 is Low and BA1 is High, bank 1 is selected. If BA0 is High and BA1 is Low, bank 2 is selected. If BA0 is High and BA1 is High, bank 3 is selected. CKE (input pin): This pin determines whether or not the next CLK is valid. If CKE is High, the next CLK rising edge is valid. If CKE is Low, the next CLK rising edge is invalid. This pin is used for power-down mode, clock suspend mode and self refresh mode. DQM, DQMU/DQML (input pins): DQM, DQMU/DQML controls input/output buffers. Read operation: If DQM, DQMU/DQML is High, the output buffer becomes High-Z. If the DQM, DQMU/DQML is Low, the output buffer becomes Low-Z. (The latency of DQM, DQMU/DQML during reading is 2 clocks.) Write operation: If DQM, DQMU/DQML is High, the previous data is held (the new data is not written). If DQM, DQMU/DQML is Low, the data is written. (The latency of DQM, DQMU/DQML during writing is 0 clock.)
DQ0 to DQ15 (DQ pins): Data is input to and output from these pins (DQ0 to DQ15; HM52Y25165B, DQ0 to DQ3; HM52Y25405B).
VCC and VCC Q (power supply pins): 2.5 V is applied. (VCC is for the internal circuit and VCCQ is for the output buffer.) VSS and V SS Q (power supply pins): Ground is connected. (VSS is for the internal circuit and VSSQ is for the output buffer.)
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Preliminary Data Sheet E0146H10
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HM52Y25165B/ HM52Y25405B-B6
Command Operation
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Command Ignore command No operation Precharge select bank Precharge all bank Refresh Mode register set 8
Command Truth Table The SDRAM recognizes the following commands specified by the CS, RAS, CAS, WE and address pins.
CKE Symbol DESL NOP n-1 n H H H H H H H H H x x x x x x x x x x CS RAS H L L L L L L L L x H H H H H L L L A0 CAS WE BA0/BA1 A10 to A12 x H L L L L H H H L L x H H H L L H L L H L x x V V V V V V x x V x x L H L H V L H x V x x V V V V V x x x V
Column address and read command READ Read with auto-precharge
Column address and write command WRIT Write with auto-precharge WRIT A
Row address strobe and bank active ACTV PRE
Note: H: VIH. L: V IL. x: VIH or VIL. V: Valid address input
Ignore command [DESL]: When this command is set (CS is High), the SDRAM ignore command input at the clock. However, the internal status is held. No operation [NOP]: This command is not an execution command. However, the internal operations continue. Column address strobe and read command [READ]: This command starts a read operation. In addition, the start address of burst read is determined by the column address (AY0 to AY8; HM52Y25165B, AY0 to AY9, AY11; HM52Y25405B) and the bank select address (BS). After the read operation, the output buffer becomes High-Z. Read with auto-precharge [READ A]: This command automatically performs a precharge operation after a burst read with a burst length of 1, 2, 4 or 8.
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READ A
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PALL REF/SELF H MRS V L L H L L Preliminary Data Sheet E0146H10
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HM52Y25165B/ HM52Y25405B-B6
Column address strobe and write command [WRIT]: This command starts a write operation. When the burst write mode is selected, the column address (AY0 to AY8; HM52Y25165B, AY0 to AY9, AY11; HM52Y25405B) and the bank select address (BA0/BA1) become the burst write start address. When the single write mode is selected, data is only written to the location specified by the column address (AY0 to AY8; HM52Y25165B, AY0 to AY9, AY11; HM52Y25405B) and the bank select address (BA0/BA1). Write with auto-precharge [WRIT A]: This command automatically performs a precharge operation after a burst write with a length of 1, 2, 4 or 8, or after a single write operation. Row address strobe and bank activate [ACTV]: This command activates the bank that is selected by BA0/BA1 (BS) and determines the row address (AX0 to AX12). When BA0 and BA1 are Low, bank 0 is activated. When BA0 is Low and BA1 is High, bank 1 is activated. When BA0 is High and BA1 is Low, bank 2 is activated. When BA0 and BA1 are High, bank 3 is activated. Precharge selected bank [PRE]: This command starts precharge operation for the bank selected by BA0/BA1. If BA0 and BA1 are Low, bank 0 is selected. If BA0 is Low and BA1 is High, bank 1 is selected. If BA0 is High and BA1 is Low, bank 2 is selected. If BA0 and BA1 are High, bank 3 is selected. Precharge all banks [PALL]: This command starts a precharge operation for all banks. Refresh [REF/SELF]: This command starts the refresh operation. There are two types of refresh operation, the one is auto-refresh, and the other is self-refresh. For details, refer to the CKE truth table section. Mode register set [MRS]: The SDRAM has a mode register that defines how it operates. The mode register is specified by the address pins (A0 to A12, BA0 and BA1) at the mode register set cycle. For details, refer to the mode register configuration. After power on, the contents of the mode register are undefined, execute the mode register set command to set up the mode register.
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Preliminary Data Sheet E0146H10
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HM52Y25165B/ HM52Y25405B-B6
DQM Truth Table (HM52Y25165B)
CKE Symbol n-1 H H H H n x x x x DQMU L x H x DQML x L x H
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Command Command 10
Upper byte (DQ8 to DQ15) write enable/output enable ENBU Lower byte (DQ0 to DQ7) write enable/output enable ENBL
Upper byte (DQ8 to DQ15) write inhibit/output disable MASKU Lower byte (DQ0 to DQ7) write inhibit/output disable Note: H: VIH. L: V IL. x: VIH or VIL. Write: IDID is needed. Read: I DOD is needed. MASKL
DQM Truth Table (HM52Y25405B)
Write enable/output enable Write inhibit/output disable
Note: H: VIH. L: V IL. x: VIH or VIL. Write: IDID is needed. Read: I DOD is needed.
The SDRAM can mask input/output data by means of DQM, DQMU/DQML.
DQMU masks the upper byte and DQML masks the lower byte. (HM52Y25165B)
During reading, the output buffer is set to Low-Z by setting DQM, DQMU/DQML to Low, enabling data output. On the other hand, when DQM, DQMU/DQML is set to High, the output buffer becomes High-Z, disabling data output. During writing, data is written by setting DQM, DQMU/DQML to Low. When DQM, DQMU/DQML is set to High, the previous data is held (the new data is not written). Desired data can be masked during burst read or burst write by setting DQM, DQMU/DQML. For details, refer to the DQM, DQMU/DQML control section of the SDRAM operating instructions.
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Symbol ENB MASK Preliminary Data Sheet E0146H10
CKE n-1 H H n x x DQM L H
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HM52Y25165B/ HM52Y25405B-B6
CKE Truth Table
CKE n-1 H L L H H H H L L L L Note: H: VIH. L: V IL. x: VIH or VIL. n L L H H L L L H H H H CS x x x L L L H L H L H RAS x x x L L H x H x H x CAS x x x L L H x H x H x WE Address x x x H H H x H x H x x x x x x x x x x x x
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Current state Active Any Clock suspend Idle Idle Idle Self refresh Power down
Command
Clock suspend mode entry Clock suspend Clock suspend mode exit
Auto-refresh command (REF) Self-refresh entry (SELF) Power down entry
Clock suspend mode entry: The SDRAM enters clock suspend mode from active mode by setting CKE to Low. If command is input in the clock suspend mode entry cycle, the command is valid. The clock suspend mode changes depending on the current status (1 clock before) as shown below. ACTIVE clock suspend: This suspend mode ignores inputs after the next clock by internally maintaining the bank active status. READ suspend and READ with Auto-precharge suspend: The data being output is held (and continues to be output). WRITE suspend and WRIT with Auto-precharge suspend: In this mode, external signals are not accepted. However, the internal state is held. Clock suspend: During clock suspend mode, keep the CKE to Low.
Clock suspend mode exit: The SDRAM exits from clock suspend mode by setting CKE to High during the clock suspend state. IDLE: In this state, all banks are not selected, and completed precharge operation.
Auto-refresh command [REF]: When this command is input from the IDLE state, the SDRAM starts autorefresh operation. (The auto-refresh is the same as the CBR refresh of conventional DRAMs.) During the auto-refresh operation, refresh address and bank select address are generated inside the SDRAM. For every auto-refresh cycle, the internal address counter is updated. Accordingly, 8192 times are required to refresh the entire memory. Before executing the auto-refresh command, all the banks must be in the IDLE state. In addition, since the precharge for all banks is automatically performed after auto-refresh, no precharge command is required after auto-refresh.
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Power down exit
Self refresh exit (SELFX)
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Preliminary Data Sheet E0146H10
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HM52Y25165B/ HM52Y25405B-B6
Self-refresh entry [SELF]: When this command is input during the IDLE state, the SDRAM starts selfrefresh operation. After the execution of this command, self-refresh continues while CKE is Low. Since selfrefresh is performed internally and automatically, external refresh operations are unnecessary. Power down mode entry: When this command is executed during the IDLE state, the SDRAM enters power down mode. In power down mode, power consumption is suppressed by cutting off the initial input circuit. Self-refresh exit: When this command is executed during self-refresh mode, the SDRAM can exit from selfrefresh mode. After exiting from self-refresh mode, the SDRAM enters the IDLE state. Power down exit: When this command is executed at the power down mode, the SDRAM can exit from power down mode. After exiting from power down mode, the SDRAM enters the IDLE state. Function Truth Table
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Current state Precharge CS H L L L L L L L Idle H L L L L L L L 12
The following table shows the operations that are performed when each command is issued in each mode of the SDRAM. The following table assumes that CKE is high.
RAS x
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x H H H L L L L x H H H L L L L H L L H H L L x H L L H H L L
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CAS WE Address x x x H H L H L H L x H H L H L H L BA, RA x BA, A10 MODE x x BA, RA BA, A10 x MODE Preliminary Data Sheet E0146H10
Command
Operation Enter IDLE after t RP Enter IDLE after t RP ILLEGAL*4 ILLEGAL*4 ILLEGAL*4 NOP*6
DESL
NOP
BA, CA, A10 READ/READ A BA, CA, A10 WRIT/WRIT A ACTV
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PRE, PALL REF, SELF MRS DESL NOP NOP NOP BA, CA, A10 READ/READ A BA, CA, A10 WRIT/WRIT A ACTV PRE, PALL REF, SELF MRS NOP
ILLEGAL
ILLEGAL
ILLEGAL*5 ILLEGAL*5
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Bank and row active Refresh Mode register set
HM52Y25165B/ HM52Y25405B-B6
Current state Row active CS H L L L L L L L RAS x H H H L L L L x CAS x H L L H H L L x WE x H H L H L H L x H H L H L Address x x Command DESL NOP Operation NOP NOP Begin read Begin write Other bank active ILLEGAL on same bank*3 Precharge ILLEGAL ILLEGAL Continue burst to end Continue burst to end Continue burst read to CAS latency and New read Term burst read/start write Other bank active ILLEGAL on same bank*3 Term burst read and Precharge ILLEGAL ILLEGAL Continue burst to end and precharge Continue burst to end and precharge ILLEGAL*4 ILLEGAL*4
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Read H L L L L L L L Read with autoprecharge H L L L L L L L
BA, CA, A10 READ/READ A BA, CA, A10 WRIT/WRIT A BA, RA BA, A10 x MODE x x ACTV PRE, PALL REF, SELF MRS DESL NOP
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H H H L L L L x H L L H H L L x H H H L L L L H L L H H L L
BA, CA, A10 READ/READ A BA, CA, A10 WRIT/WRIT A BA, RA ACTV PRE, PALL
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BA, A10 x H L MODE x x H H L H L H L x BA, RA BA, A10 x MODE Preliminary Data Sheet E0146H10
REF, SELF MRS
DESL NOP
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BA, CA, A10 READ/READ A BA, CA, A10 WRIT/WRIT A ACTV PRE, PALL REF, SELF MRS
Other bank active ILLEGAL on same bank*3 ILLEGAL*4
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ILLEGAL ILLEGAL 13
HM52Y25165B/ HM52Y25405B-B6
Current state Write CS H L L L L L L L RAS x H H H L L L L x CAS x H L L H H L L x WE x H H L H L H L x H H L Address x x Command DESL NOP Operation Continue burst to end Continue burst to end Term burst and New read Term burst and New write Other bank active ILLEGAL on same bank*3 Term burst write and Precharge*2 ILLEGAL ILLEGAL Continue burst to end and precharge Continue burst to end and precharge ILLEGAL*4 ILLEGAL*4 Other bank active ILLEGAL on same bank*3 ILLEGAL*4 ILLEGAL ILLEGAL Enter IDLE after t RC
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Write with autoprecharge H L L L L L L L Refresh (autorefresh) H L L L L L L L Notes: 1. 2. 3. 4. 5. 6. 14
BA, CA, A10 READ/READ A BA, CA, A10 WRIT/WRIT A BA, RA BA, A10 x MODE x x ACTV PRE, PALL REF, SELF MRS DESL NOP
H: VIH. L: V IL. x: VIH or VIL. The other combinations are inhibit. An interval of t DPL is required between the final valid data input and the precharge command. If tRRD is not satisfied, this operation is illegal. Illegal for same bank, except for another bank. Illegal for all banks. NOP for same bank, except for other bank.
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H H H L L L L x H L L H H L L x H H H L L L L H L L H H L L
BA, CA, A10 READ/READ A BA, CA, A10 WRIT/WRIT A ACTV PRE, PALL
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H L BA, RA BA, A10 x H L MODE x x H H L H L H L x BA, RA x BA, A10 MODE Preliminary Data Sheet E0146H10
REF, SELF MRS
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DESL NOP BA, CA, A10 READ/READ A BA, CA, A10 WRIT/WRIT A ACTV PRE, PALL REF, SELF MRS
Enter IDLE after t RC ILLEGAL*5 ILLEGAL*5
ILLEGAL*5 ILLEGAL*5
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ILLEGAL ILLEGAL
HM52Y25165B/ HM52Y25405B-B6
From PRECHARGE state, command operation To [DESL], [NOP]: When these commands are executed, the SDRAM enters the IDLE state after tRP has elapsed from the completion of precharge.
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From IDLE state, command operation To [DESL], [NOP], [PRE] or [PALL]: These commands result in no operation. To [ACTV]: The bank specified by the address pins and the ROW address is activated. To [REF], [SELF]: The SDRAM enters refresh mode (auto-refresh or self-refresh). To [MRS]: The synchronous DRAM enters the mode register set cycle.
From ROW ACTIVE state, command operation To [DESL], [NOP]: These commands result in no operation.
To [READ], [READ A]: A read operation starts. (However, an interval of tRCD is required.) To [WRIT], [WRIT A]: A write operation starts. (However, an interval of tRCD is required.) To [ACTV]: This command makes the other bank active. (However, an interval of tRRD is required.) Attempting to make the currently active bank active results in an illegal command. To [PRE], [PALL]: These commands set the SDRAM to precharge mode. (However, an interval of tRAS is required.)
From READ state, command operation
To [DESL], [NOP]: These commands continue read operations until the burst operation is completed.
To [READ], [READ A]: Data output by the previous read command continues to be output. After CAS latency, the data output resulting from the next command will start. To [WRIT], [WRIT A]: These commands stop a burst read, and start a write cycle.
To [ACTV]: This command makes other banks bank active. (However, an interval of tRRD is required.) Attempting to make the currently active bank active results in an illegal command. To [PRE], [PALL]: These commands stop a burst read, and the SDRAM enters precharge mode.
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Preliminary Data Sheet E0146H10
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HM52Y25165B/ HM52Y25405B-B6
From READ with AUTO-PRECHARGE state, command operation To [DESL], [NOP]: These commands continue read operations until the burst operation is completed, and the SDRAM then enters precharge mode. To [ACTV]: This command makes other banks bank active. (However, an interval of tRRD is required.) Attempting to make the currently active bank active results in an illegal command.
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From WRITE state, command operation To [DESL], [NOP]: These commands continue write operations until the burst operation is completed. To [READ], [READ A]: These commands stop a burst and start a read cycle. To [WRIT], [WRIT A]: These commands stop a burst and start the next write cycle.
To [ACTV]: This command makes the other bank active. (However, an interval of tRRD is required.) Attempting to make the currently active bank active results in an illegal command. To [PRE], [PALL]: These commands stop burst write and the SDRAM then enters precharge mode.
From WRITE with AUTO-PRECHARGE state, command operation To [DESL], [NOP]: These commands continue write operations until the burst is completed, and the synchronous DRAM enters precharge mode. To [ACTV]: This command makes the other bank active. (However, an interval of tRRD is required.) Attempting to make the currently active bank active results in an illegal command.
From REFRESH state, command operation
To [DESL], [NOP]: After an auto-refresh cycle (after tRC), the SDRAM automatically enters the IDLE state.
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Preliminary Data Sheet E0146H10
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HM52Y25165B/ HM52Y25405B-B6
Simplified State Diagram
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WRITE SUSPEND WRITEA SUSPEND POWER APPLIED
SELF REFRESH SR ENTRY SR EXIT
MODE REGISTER SET
MRS IDLE
REFRESH
*1 AUTO REFRESH
Note: 1. After the auto-refresh operation, precharge operation is performed automatically and enter the IDLE state.
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Write CKE_ CKE WRITE WITH AP CKE_ CKE POWER ON
CKE CKE_ IDLE POWER DOWN
ACTIVE CLOCK SUSPEND
ACTIVE
CKE_ CKE
Automatic transition after completion of command. Transition resulting from command input.
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ROW ACTIVE WRITE WRITE WRITE WITH AP READ READ WITH AP WRITE READ WITH AP WRITE WITH AP PRECHARGE WRITEA PRECHARGE PRECHARGE PRECHARGE PRECHARGE
READ Read CKE_ READ CKE READ WITH AP READ SUSPEND
Preliminary Data Sheet E0146H10 17
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CKE_ CKE READA
READA SUSPEND
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HM52Y25165B/ HM52Y25405B-B6
Mode Register Configuration
The mode register is set by the input to the address pins (A0 to A12, BA0 and BA1) during mode register set cycles. The mode register consists of five sections, each of which is assigned to address pins. BA1, BA0, A11, A10, A12, A9, A8: (OPCODE): The SDRAM has two types of write modes. One is the burst write mode, and the other is the single write mode. These bits specify write mode. Burst read and burst write: Burst write is performed for the specified burst length starting from the column address specified in the write cycle. Burst read and single write: Data is only written to the column address specified during the write cycle, regardless of the burst length. A7: Keep this bit Low at the mode register set cycle. If this pin is high, the vender test mode is set. A6, A5, A4: (LMODE): These pins specify the CAS latency. A3: (BT): A burst type is specified. A2, A1, A0: (BL): These pins specify the burst length.
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BA1 BA0 A12 A11 BA1 BA0 A12 A11 0 X X X 0 X X X 0 X X X 0 X X X
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A10 A9 OPCODE 0 0 0 0 1 0 0 1 1 X A10 0 X X X A9 0 0 1 1 0 1 0 1
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A8 A7 0 A6 A5 LMODE A6 A5 A4 CAS latency 0 1 0 1 X R R 2 3 1 R A8 Write mode Burst read and burst write R Burst read and single write R
A4
A3 BT
A2
A1 BL
A0
Preliminary Data Sheet E0146H10 18
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A3 Burst type 0 Sequential Interleave 0 0 0 0 1 1 1 1
A2 A1 A0 0 0 1 1 0 0 1 1 0 1 0 1 0 1 0 1
Burst length BT=0 1 2 4 8 R R R BT=1 1 2 4 8 R R R R
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R R is Reserved (inhibit) X: 0 or 1
HM52Y25165B/ HM52Y25405B-B6
Burst Sequence
EO
A0 0 1 A2 0 0 0 0 1 1 1 1 A1 0 0 1 1 0 0 1 1
Burst length = 2 Sequential Interleave 0, 1, 1, 0, 0, 1, 1, 0,
Burst length = 4 Starting Ad. Addressing(decimal) A1 0 0 1 1 Addressing(decimal) Interleave 0, 1, 2, 3, 4, 5, 6, 7, 1, 0, 3, 2, 5, 4, 7, 6, 2, 3, 0, 1, 6, 7, 4, 5, 3, 2, 1, 0, 7, 6, 5, 4, 4, 5, 6, 7, 0, 1, 2, 3, 5, 4, 7, 6, 1, 0, 3, 2, 6, 7, 4, 5, 2, 3, 0, 1, 7, 6, 5, 4, 3, 2, 1, 0, A0 0 1 0 1 Sequential 0, 1, 2, 3, 1, 2, 3, 0, 2, 3, 0, 1, 3, 0, 1, 2, Interleave 0, 1, 2, 3, 1, 0, 3, 2, 2, 3, 0, 1, 3, 2, 1, 0,
Starting Ad. Addressing(decimal)
Burst length = 8 Starting Ad. 0 1 0 1 0 1 0 1
L
A0 Sequential 0, 1, 2, 3, 4, 5, 6, 7, 1, 2, 3, 4, 5, 6, 7, 0, 2, 3, 4, 5, 6, 7, 0, 1, 3, 4, 5, 6, 7, 0, 1, 2, 4, 5, 6, 7, 0, 1, 2, 3, 5, 6, 7, 0, 1, 2, 3, 4, 7, 0, 1, 2, 3, 4, 5, 6,
Pr
6, 7, 0, 1, 2, 3, 4, 5, Preliminary Data Sheet E0146H10
od t uc
19
HM52Y25165B/ HM52Y25405B-B6
Operation of the SDRAM
The following chapter shows operation example of the products below.
Organization Input/output mask DQMU/DQML DQM DQM CAS latency 2/3
EO
20
4-Mword x 16-bit x 4 bank 8-Mword x 8-bit x 4 bank 16-Mword x 4-bit x 4 bank
Note: The SDRAM should be used according to the product capability (See "Features", "Pin Description" and "AC Characteristics"). Read/Write Operations
Bank active: Before executing a read or write operation, the corresponding bank and the row address must be activated by the bank active (ACTV) command. An interval of tRCD is required between the bank active command input and the following read/write command input. Read operation: A read operation starts when a read command is input. Output buffer becomes Low-Z in the (CAS Latency - 1) cycle after read command set. The SDRAM can perform a burst read operation. The burst length can be set to 1, 2, 4, 8. The start address for a burst read is specified by the column address and the bank select address (BA0/BA1) at the read command set cycle. In a read operation, data output starts after the number of clocks specified by the CAS Latency. The CAS Latency can be set to 2 or 3. When the burst length is 1, 2, 4, 8, the Dout buffer automatically becomes High-Z at the next clock after the successive burst-length data has been output. The CAS latency and burst length must be specified at the mode register.
L
Pr
Preliminary Data Sheet E0146H10
od
t uc
HM52Y25165B/ HM52Y25405B-B6
CAS Latency
EO
CLK Command Address
Row
t RCD
READ
ACTV
Column
Dout
CL = 2 CL = 3
out 0
out 1 out 0
out 2 out 1
out 3 out 2 out 3 CL = CAS latency Burst Length = 4
Burst Length
L Pr
out 0
CLK
t RCD
Command Address
ACTV READ
Row
Column
BL = 1
od
out 0 out 1
Dout
BL = 2 BL = 4 BL = 8
out 0 out 1 out 2 out 3
out 0 out 1 out 2 out 3 out 4 out 5 out 6 out 7
BL : Burst Length CAS Latency = 2
t uc
Preliminary Data Sheet E0146H10 21
HM52Y25165B/ HM52Y25405B-B6
Write operation: Burst write or single write mode is selected by the OPCODE (BA1, BA0, A12, A11, A10, A9, A8) of the mode register.
EO
CLK Command Address
ACTV Row
1. Burst write: A burst write operation is enabled by setting OPCODE (A9, A8) to (0, 0). A burst write starts in the same clock as a write command set. (The latency of data input is 0 clock.) The burst length can be set to 1, 2, 4 and 8, like burst read operations. The write start address is specified by the column address and the bank select address (BA0/BA1) at the write command set cycle.
t RCD
WRIT
BL = 1
Din
BL = 2 BL = 4
BL = 8
2. Single write: A single write operation is enabled by setting OPCODE (A9, A8) to (1, 0). In a single write operation, data is only written to the column address and the bank select address (BA0/BA1) specified by the write command set cycle without regard to the burst length setting. (The latency of data input is 0 clock).
L
Column
in 0
in 0 in 0 in 0
in 1
in 1 in 1
in 2 in 2
in 3 in 3 in 4 in 5 in 6 in 7
Pr
t RCD
ACTV WRIT Row Column
CAS Latency = 2, 3
od
in 0
CLK
Command
t uc
Address Din
Preliminary Data Sheet E0146H10 22
HM52Y25165B/ HM52Y25405B-B6
Auto Precharge Read with auto-precharge: In this operation, since precharge is automatically performed after completing a read operation, a precharge command need not be executed after each read operation. The command executed for the same bank after the execution of this command must be the bank active (ACTV) command. In addition, an interval defined by l APR is required before execution of the next command.
CAS latency 3 2 Precharge start cycle 2 cycle before the final data is output 1 cycle before the final data is output
EO
CLK CL=2 Command ACTV DQ (input) CL=3 Command ACTV DQ (input)
Burst Read (Burst Length = 4)
Note: Internal auto-precharge starts at the timing indicated by " ". And an interval of tRAS (lRAS) is required between previous active (ACTV) command and internal precharge "
L
READ A ACTV
Pr
lRAS out0 READ A lRAS
out1
out2
out3
lAPR ACTV
out0
out1
out2
out3
lAPR
Preliminary Data Sheet E0146H10 23
od
".
t uc
HM52Y25165B/ HM52Y25405B-B6
Write with auto-precharge: In this operation, since precharge is automatically performed after completing a burst write or single write operation, a precharge command need not be executed after each write operation. The command executed for the same bank after the execution of this command must be the bank active (ACTV) command. In addition, an interval of lAPW is required between the final valid data input and input of next command. Burst Write (Burst Length = 4)
EO
CLK Command DQ (input)
Note: Internal auto-precharge starts at the timing indicated by " ". and an interval of tRAS (lRAS) is required between previous active (ACTV) command and internal precharge " ".
Single Write
Command
DQ (input)
Note: Internal auto-precharge starts at the timing indicated by " ". and an interval of tRAS (lRAS) is required between previous active (ACTV) command and internal precharge " ".
L
ACTV
WRIT A
ACTV
IRAS in0 in1 in2 in3 lAPW
Pr
WRIT A
od
ACTV
CLK
ACTV
IRAS
in
t uc
lAPW
Preliminary Data Sheet E0146H10 24
HM52Y25165B/ HM52Y25405B-B6
Command Intervals Read command to Read command interval: 1. Same bank, same ROW address: When another read command is executed at the same ROW address of the same bank as the preceding read command execution, the second read can be performed after an interval of no less than 1 clock. Even when the first command is a burst read that is not yet finished, the data read by the second command will be valid. READ to READ Command Interval (same ROW address in same bank)
EO
CLK Command
Address
BS
ACTV Row
Dout
Bank0 Active
2. Same bank, different ROW address: When the ROW address changes on same bank, consecutive read commands cannot be executed; it is necessary to separate the two read commands with a precharge command and a bank-active command. 3. Different bank: When the bank changes, the second read can be performed after an interval of no less than 1 clock, provided that the other bank is in the bank-active state. Even when the first command is a burst read that is not yet finished, the data read by the second command will be valid. READ to READ Command Interval (different bank)
CLK Command
Address
ACTV
Row 0
BS
Dout
Bank0 Active Bank3 Bank0 Bank3 Active Read Read
L
READ
READ
Column A Column B
out A0 out B0 out B1 out B2 out B3
Column =A Column =B Column =A Column =B Dout Read Read Dout
Pr
ACTV
Row 1
CAS Latency = 3 Burst Length = 4 Bank 0
od
out A0 out B0 out B1 out B2 out B3 Bank0 Bank3 Dout Dout
t uc
CAS Latency = 3 Burst Length = 4
READ READ
Column A Column B
Preliminary Data Sheet E0146H10 25
HM52Y25165B/ HM52Y25405B-B6
Write command to Write command interval: 1. Same bank, same ROW address: When another write command is executed at the same ROW address of the same bank as the preceding write command, the second write can be performed after an interval of no less than 1 clock. In the case of burst writes, the second write command has priority. WRITE to WRITE Command Interval (same ROW address in same bank)
EO
CLK Command
Address
ACTV
Row
WRIT
WRIT
BS
Din
2. Same bank, different ROW address: When the ROW address changes, consecutive write commands cannot be executed; it is necessary to separate the two write commands with a precharge command and a bank-active command. 3. Different bank: When the bank changes, the second write can be performed after an interval of no less than 1 clock, provided that the other bank is in the bank-active state. In the case of burst write, the second write command has priority. WRITE to WRITE Command Interval (different bank)
CLK Command
Address
BS
ACTV ACTV WRIT WRIT
Din
Bank0 Active
L
in A0 Bank0 Active
Row 0
Row 1
Column A Column B
in B0
in B1
in B2
in B3
Column =A Column =B Write Write
Burst Write Mode Burst Length = 4 Bank 0
Pr
Column A Column B
od
in B2 in B3
t uc
Burst Write Mode Burst Length = 4
in A0
in B0
in B1
Bank3 Bank0 Bank3 Active Write Write
Preliminary Data Sheet E0146H10 26
HM52Y25165B/ HM52Y25405B-B6
Read command to Write command interval: 1. Same bank, same ROW address: When the write command is executed at the same ROW address of the same bank as the preceding read command, the write command can be performed after an interval of no less than 1 clock. However, DQM, DQMU/DQML must be set High so that the output buffer becomes High-Z before data input. READ to WRITE Command Interval (1)
EO
CLK Command
DQM, CL=2 DQMU /DQML
READ WRIT
Dout
READ to WRITE Command Interval (2)
2. Same bank, different ROW address: When the ROW address changes, consecutive write commands cannot be executed; it is necessary to separate the two commands with a precharge command and a bankactive command.
3. Different bank: When the bank changes, the write command can be performed after an interval of no less than 1 cycle, provided that the other bank is in the bank-active state. However, DQM, DQMU/DQML must be set High so that the output buffer becomes High-Z before data input.
L
CL=3
Din
in B0 High-Z
in B1
in B2
in B3
Burst Length = 4 Burst write
Pr
READ WRIT
CLK Command
od
2 clock
DQM, DQMU/DQML
CL=2
High-Z
Dout
CL=3
High-Z
Din
t uc
27
Preliminary Data Sheet E0146H10
HM52Y25165B/ HM52Y25405B-B6
Write command to Read command interval: 1. Same bank, same ROW address: When the read command is executed at the same ROW address of the same bank as the preceding write command, the read command can be performed after an interval of no less than 1 clock. However, in the case of a burst write, data will continue to be written until one clock before the read command is executed. WRITE to READ Command Interval (1)
EO
CLK Command DQM, DQMU/DQML Din Dout
CLK Command DQM, DQMU/DQML Din Dout
WRIT
READ
WRITE to READ Command Interval (2)
2. Same bank, different ROW address: When the ROW address changes, consecutive read commands cannot be executed; it is necessary to separate the two commands with a precharge command and a bankactive command. 3. Different bank: When the bank changes, the read command can be performed after an interval of no less than 1 clock, provided that the other bank is in the bank-active state. However, in the case of a burst write, data will continue to be written until one clock before the read command is executed (as in the case of the same bank and the same address).
L
in A0
WRIT in A0 Column = A Write
out B0 Column = A Write Column = B Read
out B1
out B2
out B3 Burst Write Mode CAS Latency = 2 Burst Length = 4 Bank 0
Pr
READ in A1 Column = B Read
CAS Latency Column = B Dout
Preliminary Data Sheet E0146H10 28
od
out B0 out B1 CAS Latency Column = B Dout
out B2
out B3 Burst Write Mode CAS Latency = 2 Burst Length = 4 Bank 0
t uc
HM52Y25165B/ HM52Y25405B-B6
Read with auto precharge to Read command interval 1. Different bank: When some banks are in the active state, the second read command (another bank) is executed. Even when the first read with auto-precharge is a burst read that is not yet finished, the data read by the second command is valid. The internal auto-precharge of one bank starts at the next clock of the second command. Read with Auto Precharge to Read Command Interval (Different bank)
EO
CLK Command BS Dout CLK Command BS Din
READ A
READ
Note: Internal auto-precharge starts at the timing indicated by "
2. Same bank: The consecutive read command (the same bank) is illegal. Write with auto precharge to Write command interval
1. Different bank: When some banks are in the active state, the second write command (another bank) is executed. In the case of burst writes, the second write command has priority. The internal auto-precharge of one bank starts at the next clock of the second command . Write with Auto Precharge to Write Command Interval (Different bank)
Note: Internal auto-precharge starts at the timing indicated by "
2. Same bank: The consecutive write command (the same bank) is illegal.
L
bank0 Read A WRIT A in A0 bank0 Write A in A1
out A0 bank3 Read
out A1
out B0
out B1 CAS Latency = 3 Burst Length = 4
Pr
WRIT in B0 bank3 Write in B1
".
Preliminary Data Sheet E0146H10 29
od
in B2 in B3 ".
t uc
Burst Length = 4
HM52Y25165B/ HM52Y25405B-B6
Read with auto precharge to Write command interval 1. Different bank: When some banks are in the active state, the second write command (another bank) is executed. However, DQM, DQMU/DQML must be set High so that the output buffer becomes High-Z before data input. The internal auto-precharge of one bank starts at the next clock of the second command. Read with Auto Precharge to Write Command Interval (Different bank)
EO
DQM, DQMU/DQML 30
CLK READ A WRIT
Command BS
2. Same bank: The consecutive write command from read with auto precharge (the same bank) is illegal. It is necessary to separate the two commands with a bank active command.
L
CL = 2 CL = 3 Din Dout bank0 Read A
in B0
in B1
in B2
in B3
High-Z
Note: Internal auto-precharge starts at the timing indicated by "
Pr
bank3 Write Preliminary Data Sheet E0146H10
Burst Length = 4
".
od
t uc
HM52Y25165B/ HM52Y25405B-B6
Write with auto precharge to Read command interval 1. Different bank: When some banks are in the active state, the second read command (another bank) is executed. However, in case of a burst write, data will continue to be written until one clock before the read command is executed. The internal auto-precharge of one bank starts at the next clock of the second command. Write with Auto Precharge to Read Command Interval (Different bank)
EO
CLK Command BS DQM, DQMU/DQML Din Dout
WRIT A
READ
Note: Internal auto-precharge starts at the timing indicated by "
2. Same bank: The consecutive read command from write with auto precharge (the same bank) is illegal. It is necessary to separate the two commands with a bank active command.
L
in A0 out B0 out B1 out B2 out B3 CAS Latency = 3 Burst Length = 4 ". bank0 Write A
Pr
bank3 Read Preliminary Data Sheet E0146H10
od
t uc
31
HM52Y25165B/ HM52Y25405B-B6
Read command to Precharge command interval (same bank): When the precharge command is executed for the same bank as the read command that preceded it, the minimum interval between the two commands is one clock. However, since the output buffer then becomes High-Z after the clocks defined by lHZP , there is a case of interruption to burst read data output will be interrupted, if the precharge command is input during burst read. To read all data by burst read, the clocks defined by lEP must be assured as an interval from the final data output to precharge command execution. READ to PRECHARGE Command Interval (same bank): To output all data CAS Latency = 2, Burst Length = 4
EO
CLK Command Dout CLK Command Dout
CAS Latency = 3, Burst Length = 4
L
READ out A0 out A1 CL=2 READ out A0 CL=3
PRE/PALL
out A2
out A3
Pr
PRE/PALL
l EP = -1 cycle
Preliminary Data Sheet E0146H10 32
od
out A1 out A2 out A3 l EP = -2 cycle
t uc
HM52Y25165B/ HM52Y25405B-B6
READ to PRECHARGE Command Interval (same bank): To stop output data CAS Latency = 2, Burst Length = 1, 2, 4, 8
EO
CLK Command Dout
READ
PRE/PALL
High-Z out A0
l HZP =2
CAS Latency = 3, Burst Length = 1, 2, 4, 8
L
READ
PRE/PALL
CLK
Command
Pr
High-Z out A0 l HZP =3
Dout
Preliminary Data Sheet E0146H10 33
od t uc
HM52Y25165B/ HM52Y25405B-B6
Write command to Precharge command interval (same bank): When the precharge command is executed for the same bank as the write command that preceded it, the minimum interval between the two commands is 1 clock. However, if the burst write operation is unfinished, the input data must be masked by means of DQM, DQMU/DQML for assurance of the clock defined by t DPL.
EO
CLK Command DQM, DQMU/DQML Din
WRITE to PRECHARGE Command Interval (same bank) Burst Length = 4 (To stop write operation)
WRIT
PRE/PALL
L
tDPL
Pr
PRE/PALL
CLK Command DQM, DQMU/DQML Din
WRIT
in A0
in A1
tDPL
od
PRE/PALL
Burst Length = 4 (To write all data)
CLK Command DQM, DQMU/DQML WRIT
t uc
Din
in A0
in A1
in A2
in A3
tDPL
Preliminary Data Sheet E0146H10 34
HM52Y25165B/ HM52Y25405B-B6
Bank active command interval: 1. Same bank: The interval between the two bank-active commands must be no less than tRC. 2. In the case of different bank-active commands: The interval between the two bank-active commands must be no less than tRRD. Bank Active to Bank Active for Same Bank
EO
CLK Command ACTV Address ROW BS Bank 0 Active
ACTV
Bank Active to Bank Active for Different Bank
Command
Address
L
t RC
ROW
Bank 0 Active
Pr
ACTV ACTV ROW:1 t RRD Bank 3 Active Preliminary Data Sheet E0146H10
CLK
od t uc
35
ROW:0
BS
Bank 0 Active
HM52Y25165B/ HM52Y25405B-B6
Mode register set to Bank-active command interval: The interval between setting the mode register and executing a bank-active command must be no less than lRSA .
EO
36
CLK
Command
MRS
ACTV
Address
CODE
BS & ROW
L
I RSA Bank Active
Mode Register Set
Pr
Preliminary Data Sheet E0146H10
od t uc
HM52Y25165B/ HM52Y25405B-B6
DQM Control The DQM mask the DQ data. The DQMU and DQML mask the upper and lower bytes of the DQ data, respectively. The timing of DQMU/DQML is different during reading and writing. Reading: When data is read, the output buffer can be controlled by DQM, DQMU/DQML. By setting DQM, DQMU/DQML to Low, the output buffer becomes Low-Z, enabling data output. By setting DQM, DQMU/DQML to High, the output buffer becomes High-Z, and the corresponding data is not output. However, internal reading operations continue. The latency of DQM, DQMU/DQML during reading is 2 clocks. Writing: Input data can be masked by DQM, DQMU/DQML. By setting DQM, DQMU/DQML to Low, data can be written. In addition, when DQM, DQMU/DQML is set to High, the corresponding data is not written, and the previous data is held. The latency of DQM, DQMU/DQML during writing is 0 clock.
DQM, DQMU/DQML
DQ (input)
; ;;
in 0 in 1 in 3 l DID = 0 Latency Preliminary Data Sheet E0146H10
EO
Reading
CLK DQM, DQMU/DQML DQ (output)
L
CLK
Pr
out 0 out 1 lDOD = 2 Latency
High-Z out 3
od t uc
37
Writing
HM52Y25165B/ HM52Y25405B-B6
Refresh Auto-refresh: All the banks must be precharged before executing an auto-refresh command. Since the autorefresh command updates the internal counter every time it is executed and determines the banks and the ROW addresses to be refreshed, external address specification is not required. The refresh cycle is 8192 cycles/64 ms. (8192 cycles are required to refresh all the ROW addresses.) The output buffer becomes HighZ after auto-refresh start. In addition, since a precharge has been completed by an internal operation after the auto-refresh, an additional precharge operation by the precharge command is not required. Self-refresh: After executing a self-refresh command, the self-refresh operation continues while CKE is held Low. During self-refresh operation, all ROW addresses are refreshed by the internal refresh timer. A selfrefresh is terminated by a self-refresh exit command. Before and after self-refresh mode, execute auto-refresh to all refresh addresses in or within 64 ms period on the condition (1) and (2) below. (1) Enter self-refresh mode within 7.8 s after either burst refresh or distributed refresh at equal interval to all refresh addresses are completed. (2) Start burst refresh or distributed refresh at equal interval to all refresh addresses within 7.8 s after exiting from self-refresh mode.
EO
Others
38
Power-down mode: The SDRAM enters power-down mode when CKE goes Low in the IDLE state. In power down mode, power consumption is suppressed by deactivating the input initial circuit. Power down mode continues while CKE is held Low. In addition, by setting CKE to High, the SDRAM exits from the power down mode, and command input is enabled from the next clock. In this mode, internal refresh is not performed. Clock suspend mode: By driving CKE to Low during a bank-active or read/write operation, the SDRAM enters clock suspend mode. During clock suspend mode, external input signals are ignored and the internal state is maintained. When CKE is driven High, the SDRAM terminates clock suspend mode, and command input is enabled from the next clock. For details, refer to the "CKE Truth Table". Power-up sequence: The SDRAM should be goes on the following sequence with power up. The CLK, CKE, CS, DQM, DQMU/DQML and DQ pins keep low till power stabilizes. The CLK pin is stabilized within 100 s after power stabilizes before the following initialization sequence. The CKE and DQM, DQMU/DQML is driven to high between power stabilizes and the initialization sequence. This SDRAM has VCC clamp diodes for CLK, CKE, CS DQM, DQMU/DQML and DQ pins. If these pins go high before power up, the large current flows from these pins to VCC through the diodes.
Initialization sequence: When 200 s or more has past after the above power-up sequence, all banks must be precharged using the precharge command (PALL). After t RP delay, set 8 or more auto refresh commands (REF). Set the mode register set command (MRS) to initialize the mode register. We recommend that by keeping DQM, DQMU/DQML and CKE to High, the output buffer becomes High-Z during Initialization sequence, to avoid DQ bus contention on memory system formed with a number of device.
L
Pr
Preliminary Data Sheet E0146H10
od
t uc
HM52Y25165B/ HM52Y25405B-B6
Power up sequence 100 s 0V Low Low Low
Power stabilize
Initialization sequence 200 s
EO
VCC, VCCQ CKE, DQM, DQMU/DQML CLK CS, DQ Parameter Power dissipation Operating temperature Storage temperature Note: Parameter Supply voltage Input high voltage Input low voltage Notes: 1. 2. 3. 4. 5.
Absolute Maximum Ratings
Voltage on any pin relative to V SS Supply voltage relative to VSS Short circuit output current
1. Respect to VSS .
DC Operating Conditions (Ta = 0 to +70C)
Symbol VCC, VCCQ VSS , VSS Q VIH VIL
All voltage referred to VSS . The supply voltage with all VCC and VCCQ pins must be on the same level. The supply voltage with all VSS and VSS Q pins must be on the same level. VIH (max) = VCC + 2.0 V for pulse width 3 ns at VCC. VIL (min) = VSS - 2.0 V for pulse width 3 ns at VSS .
L
Symbol VT Value -0.5 to VCC + 0.5 ( 3.6 (max)) -0.5 to +3.6 50 Unit V V mA W C C Note 1 1
Pr
VCC Iout PT 1.0 Topr Tstg Min 2.3 0 1.7 -0.5 Preliminary Data Sheet E0146H10
0 to +70 -55 to +125
od
Max 2.7 V 0 V VCCQ + 0.5 0.7 V V
Unit
Notes 1, 2 3
t uc
1, 4 1, 5 39
HM52Y25165B/ HM52Y25405B-B6
VIL/VIH Clamp
This SDRAM has VIL and V IH clamp for CLK, CKE, CS, DQM and DQ pins. Minimum VIL Clamp Current
I (mA) -32 -25 -19 -13 -8 -4 -2 -0.6 0 0 0 0
I (mA)
EO
VIL (V) -2 -1.8 -1.6 -1.4 -1.2 -1 -0.9 -0.8 -0.6 -0.4 -0.2 0 -10 -15 -20 -25 -30 -35 40
L
0 -2 -5 -1.5
Pr
Preliminary Data Sheet E0146H10
od
-1 -0.5 VIL (V)
0
t uc
HM52Y25165B/ HM52Y25405B-B6
Minimum VIH Clamp Current
VIH (V) I (mA) 10 8 5.5 3.5 1.5 0.3 0 0 0 0 0
I (mA)
EO
VCC + 2 VCC + 1.8 VCC + 1.6 VCC + 1.4 VCC + 1.2 VCC + 1 VCC + 0.8 VCC + 0.6 VCC + 0.4 VCC + 0.2 VCC + 0
L
10 8 6 4 2 0 VCC + 0 VCC + 0.5
Pr
Preliminary Data Sheet E0146H10 41
od
VCC + 1 VCC + 1.5 VIH (V)
VCC + 2
t uc
HM52Y25165B/ HM52Y25405B-B6
IOL/IOH Characteristics
IOL (mA)
EO
Vout (V) 0 0.4 0.65 0.85 1 1.4 1.5 1.65 1.8 1.95 2.3 2.5 2.7 150 100 50 0 0 42
Output Low Current (IOL)
I OL Min (mA) 0 17 25 30 32 35 35 35 I OL Max (mA) 0 58 84 101 110 124 124 124 124 124 124 124 124
L
0.5
35
Pr
35 35 35 35 1 1.5 Vout (V) 2 Preliminary Data Sheet E0146H10
od
2.5 3
Min
t uc
Max
HM52Y25165B/ HM52Y25405B-B6
Output High Current (I OH ) (Ta = 0 to +70C, VCC, VCCQ = 2.3V to 2.7, VSS, VSSQ = 0 V)
I OH Min (mA) -- -- -- -- 0 -14 -23 -28 -33 -36 -45 -51 I OH Max (mA) 0 0 0 -30 -57 -92 -112 -124 -135 -142 -160 -166
IOH (mA)
EO
Vout (V) 3.45 3.3 2.7 2.5 2.3 2 1.8 1.65 1.5 1.4 1 0 0 0 0.5 -50 -100 -150 -200
L
1
Pr
1.5 2 Vout (V) Preliminary Data Sheet E0146H10
2.5
3
3.5
od
Min Max
t uc
43
HM52Y25165B/ HM52Y25405B-B6
DC Characteristics (Ta = 0 to +70C, VCC, VCC Q = 2.5 V 0.2 V, VS S, V SSQ = 0 V) (HM52Y25165B)
EO
Parameter Operating current (CAS latency = 2) (CAS latency = 3) Burst operating current (CAS latency = 2) (CAS latency = 3) Refresh current Self refresh current Input leakage current Output leakage current Output high voltage Output low voltage 44
HM52Y25165B -B6 Symbol I CC1 I CC1 I CC2P I CC2PS I CC2N I CC2NS I CC3P Min -- -- -- -- -- -- -- -- -- -- Max 80 100 3 2 20 9 4 3 Unit mA mA mA mA mA mA mA mA mA mA CKE = VIL, t CK = 12 ns CKE = VIL, t CK = CKE, CS = VIH, t CK = 12 ns CKE = VIH, t CK = CKE = VIL, t CK = 12 ns CKE = VIL, t CK = CKE, CS = VIH, t CK = 12 ns CKE = VIH, t CK = 6 7 4 9 1, 2, 6 2, 7 1, 2, 4 2, 9 Test conditions Burst length = 1 t RC = min Notes 1, 2, 3
Standby current in power down Standby current in power down (input signal stable)
Standby current in non power down Standby current in non power down (input signal stable)
Active standby current in power down Active standby current in power down (input signal stable) Active standby current in non power down Active standby current in non power down (input signal stable)
L
Pr
I CC3PS I CC3N 30 15 I CC3NS I CC4 I CC4 I CC5 I CC6 I LI I LO VOH VOL -- -- -- -- 85 110 220 3 1 1.5 -- 0.4 -1 -1.5 2.0 -- Preliminary Data Sheet E0146H10
od
mA mA mA mA A A V V
t CK = min, BL = 4
1, 2, 5
t RC = min
3 8
VIH VCC - 0.2 V VIL 0.2 V 0 Vin VCC
t uc
0 Vout VCC DQ = disable I OH = -1 mA I OL = 1 mA
HM52Y25165B/ HM52Y25405B-B6
DC Characteristics (Ta = 0 to +70C, VCC, VCC Q = 2.5 V 0.2 V, VS S, V SSQ = 0 V) (HM52Y25405B)
EO
Parameter Operating current (CAS latency = 2) (CAS latency = 3) Burst operating current (CAS latency = 2) (CAS latency = 3) Refresh current Self refresh current Input leakage current Output leakage current Output high voltage Output low voltage
HM52Y25405B -B6 Symbol I CC1 I CC1 I CC2P I CC2PS I CC2N I CC2NS I CC3P Min -- -- -- -- -- -- -- -- -- -- Max 75 95 3 2 20 9 4 3 Unit mA mA mA mA mA mA mA mA mA mA CKE = VIL, t CK = 12 ns CKE = VIL, t CK = CKE, CS = VIH, t CK = 12 ns CKE = VIH, t CK = CKE = VIL, t CK = 12 ns CKE = VIL, t CK = CKE, CS = VIH, t CK = 12 ns CKE = VIH, t CK = 6 7 4 9 1, 2, 6 2, 7 1, 2, 4 2, 9 Test conditions Burst length = 1 t RC = min Notes 1, 2, 3
Standby current in power down Standby current in power down (input signal stable)
Standby current in non power down Standby current in non power down (input signal stable)
Active standby current in power down Active standby current in power down (input signal stable) Active standby current in non power down Active standby current in non power down (input signal stable)
L
Pr
I CC3PS I CC3N 30 15 I CC3NS I CC4 I CC4 I CC5 I CC6 I LI I LO VOH VOL -- -- -- -- 70 95 220 3 1 1.5 -- 0.4 -1 -1.5 2.0 -- Preliminary Data Sheet E0146H10
od
mA mA mA mA A A V V
t CK = min, BL = 4
1, 2, 5
t RC = min
3 8
VIH VCC - 0.2 V VIL 0.2 V 0 Vin VCC
t uc
0 Vout VCC DQ = disable I OH = -1 mA I OL = 1 mA 45
HM52Y25165B/ HM52Y25405B-B6
Notes: 1. I CC depends on output load condition when the device is selected. ICC (max) is specified at the output open condition. 2. One bank operation. 3. Input signals are changed once per one clock. 4. Input signals are changed once per two clocks. 5. Input signals are changed once per four clocks. 6. After power down mode, CLK operating current. 7. After power down mode, no CLK operating current. 8. After self refresh mode set, self refresh current. 9. Input signals are V IH or VIL fixed.
EO
Parameter Input capacitance (CLK) Notes: 1. 2. 3. 4. 46
Capacitance (Ta = 25C, VCC, VCCQ = 2.5 V 0.2 V)
Input capacitance (Input) Output capacitance (DQ)
Capacitance measured with Boonton Meter or effective capacitance measuring method. Measurement condition: f = 1 MHz, 1.4 V bias, 200 mV swing. DQM, DQMU/DQML = VIH to disable Dout. This parameter is sampled and not 100% tested.
L
CI1 CI2 CO
Symbol
Min 2.5 2.5 4
Max 3.5 3.8 6.5
Unit pF pF pF
Notes 1, 2, 4 1, 2, 4 1, 2, 3, 4
Pr
Preliminary Data Sheet E0146H10
od t uc
HM52Y25165B/ HM52Y25405B-B6
AC Characteristics (Ta = 0 to +70C, VCC, VCCQ = 2.5 V 0.2 V, VSS, VSSQ = 0 V)
HM52Y25165B/ HM52Y25405B -B6 HITACHI Symbol t CK t CK t CKH t CKL t AC t AC t OH t LZ PC/100 Symbol Tclk Tclk Tch Tcl Tac Tac Toh Min 15 10 3 3 -- -- 3 2 -- 2 2 1 70 50 20 20 20 20 1 Max -- -- -- -- 8 6 -- -- 6 -- -- -- -- Unit ns ns ns ns ns ns ns ns ns ns ns ns ns 1, 2 1, 2, 3 1, 4 1, 5, 6 1 1, 6 1 1 1 1 1 1 1 1 1, 2 Notes 1
EO
Parameter System clock cycle time (CAS latency = 2) (CAS latency = 3) CLK high pulse width CLK low pulse width Access time from CLK (CAS latency = 2) (CAS latency = 3) Data-out hold time CLK to Data-out low impedance CLK to Data-out high impedance (CAS latency = 2, 3) Input setup time CKE setup time for power down exit Input hold time Ref/Active to Ref/Active command period Active to Precharge command period Active command to column command (same bank) Precharge to active command period Write recovery or data-in to precharge lead time Active (a) to Active (b) command period Transition time (rise and fall) Refresh period Notes: 1. 2. 3. 4. 5. 6.
AC measurement assumes t T = 1 ns. Reference level for timing of input signals is 1.2 V. Access time is measured at 1.2 V. Load condition is CL = 50 pF. t LZ (min) defines the time at which the outputs achieves the low impedance state. t HZ (max) defines the time at which the outputs achieves the high impedance state. t CES define CKE setup time to CLK rising edge except power down exit command. t AS /tAH: Address, tCS/tCH: CS, RAS, CAS, WE, DQM, DQMU/DQML. t DS/tDH: Data-in, tCES/tCEH: CKE.
L
Pr
t HZ t AS , t CS, t DS, Tsi t CES t CESP Tpde t AH, t CH, t DH, Thi t CEH t RC Trc t RAS Tras Trcd Trp t RCD t RP t DPL Tdpl Trrd t RRD tT t REF Preliminary Data Sheet E0146H10
od
-- -- -- -- 5 -- 64
120000 ns ns ns ns ns
t uc
ns ms 47
HM52Y25165B/ HM52Y25405B-B6
Test Conditions * Input and output timing reference levels: 1.2 V * Input waveform and output load: See following figures
2.2 V I/O CL
EO
input
VSS 48
1.7 V 0.7 V
t
T
t
L
T
Pr
Preliminary Data Sheet E0146H10
od t uc
HM52Y25165B/ HM52Y25405B-B6
Relationship Between Frequency and Minimum Latency
HM52Y25165B/ HM52Y25405B -B6 100 HITACHI Symbol lRCD lRC lRAS lRP lDPL lRRD Tdpl PC/100 Symbol 10 2 7 5 2 2 2 1 4 7 Notes 1 = [lRAS+ lRP] 1 1 1 1 1 2 = [lDPL + lRP] = [lRC] 3
EO
Parameter Frequency (MHz) tCK (ns) Self refresh exit time (CAS latency = 3) (CAS latency = 3) DQM to data in DQM to data out CKE to CLK disable
Active command to column command (same bank) Active command to active command (same bank) Active command to precharge command (same bank) Precharge command to active command (same bank) Write recovery or data-in to precharge command (same bank) Active command to active command (different bank)
Last data in to active command (Auto precharge, same bank)
Self refresh exit to command input
Precharge command to high impedance (CAS latency = 2)
Last data out to active command (Auto precharge, same bank) Last data out to precharge (early precharge) (CAS latency = 2)
Column command to column command Write command to data in latency
Register set to active command
L
Pr
lSREX Tsrx lAPW lSEC Tdal lHZP lHZP Troh Troh lAPR lEP lEP lCCD lWCD lDID lDOD lCLE lRSA Tccd Tdwd Tdqm Tdqz Tcke Tmrd Preliminary Data Sheet E0146H10
od
2 3 1 -1 -2 1 0 0 2 1 1
t uc
49
HM52Y25165B/ HM52Y25405B-B6
HM52Y25165B/ HM52Y25405B Parameter -B6 100 HITACHI Symbol lCDD lPEC PC/100 Symbol 10 0 1 Notes
EO
Frequency (MHz) tCK (ns) CS to command disable 50
Power down exit to command input
Notes: 1. lRCD to l RRD are recommended value. 2. Be valid [DESL] or [NOP] at next command of self refresh exit. 3. Except [DESL] and [NOP]
L Pr
Preliminary Data Sheet E0146H10
od t uc
HM52Y25165B/ HM52Y25405B-B6
Timing Waveforms
;; ;; ;;;
EO
Read Cycle
CLK
VIH t CK t CKH t CKL t RC
;; ;; ;;;; ; ;; ;;; ;;; ;;
t RCD t CS t CH t CS t CH t CS t CH t CS t CH
CKE
t RAS
t RP
CS
t CS t CH
t CS t CH
t CS t CH
t CS t CH
L
t CS t CH t CS t CH t AS t AH t AS t AH t AS t AH t CS Bank 0 Active
RAS
t CS t CH
t CS t CH
t CS t CH
CAS
t CS t CH
t CS t CH
t CS t CH
WE
Pr
t AS t AH t AS t AH t AS t AH t CH t AC t AC t AC Bank 0 Read t LZ t OH t OH
t AS t AH
t AS t AH t AS t AH
BS
t AS t AH
A10
t AS t AH
Address
od
t AC t HZ t OH t OH Bank 0 Precharge
DQM, DQMU/DQML
DQ (input)
DQ (output)
CAS latency = 2 Burst length = 4 Bank 0 access = VIH or VIL
t uc
51
Preliminary Data Sheet E0146H10
;; ;; ;; ;;;;
HM52Y25165B/ HM52Y25405B-B6
Write Cycle
;;; ; ;
CS
t CS t CH t CS t CH t CS t CH t CS t CH
EO
CLK
VIH
t CK
t CKH t CKL
t RC
CKE
t RCD
t RAS
t RP
t CS t CH
t CS t CH
t CS t CH
t CS t CH
RAS
t CS t CH
t CS t CH
t CS t CH
t CS t CH
L
t CS t CH t AS t AH t AS t AH t AS t AH t CS Bank 0 Active
CAS
t CS t CH
t CS t CH
t CS t CH
WE
t AS t AH
t AS t AH
t AS t AH t AS t AH
BS
Pr
t AS t AH t AS t AH t CH t DS t DH tDS t DH t DS t DH t DS t DH t DPL Bank 0 Write
t AS t AH
A10
t AS t AH
Address
DQM, DQMU/DQML
od
Bank 0 Precharge
DQ (input)
DQ (output)
CAS latency = 2 Burst length = 4 Bank 0 access = VIH or VIL
t uc
Preliminary Data Sheet E0146H10
52
;;;; ;;; ; ;;;;;;; ;;; ;; ;; ; ;;;;;; ; ;; ;;;; ;
Mode Register Set Cycle
0
;;;; ;;;; ;; ; ;
HM52Y25165B/ HM52Y25405B-B6
DQM, DQMU/DQML DQ (output) DQ (input)
b High-Z l RP l RSA l RCD
Output mask Precharge If needed Mode Bank 3 register Active Set Bank 3 Read
Read Cycle/Write Cycle
0 1
2
3
4
5
6
7
8
9
10
11
12
13
CLK CS
CKE
VIH
RAS CAS WE BS
Address DQM, DQMU/DQML DQ (output) DQ (input)
R:a
C:a
R:b
C:b
C:b'
C:b"
a
a+1 a+2 a+3
b
b+1 b+2 b+3 b'
Bank 3 Read
High-Z
Bank 0 Active
Bank 0 Read
Bank 3 Active
Bank 3 Bank 0 Read Precharge
Bank 3 Read
CKE CS
VIH
RAS CAS WE BS
Address DQM, DQMU/DQML DQ (output) DQ (input)
R:a
C:a
R:b
C:b
C:b'
C:b"
High-Z
a
a+1 a+2 a+3
Bank 3 Active
b
b+1 b+2 b+3 b'
Bank 0 Precharge
b'+1 b"
Bank 0 Active
Bank 0 Write
Bank 3 Write
Bank 3 Write
Bank 3 Write
Preliminary Data Sheet E0146H10
;
b+3 b' b'+1 b'+2 b'+3
EO
CLK CKE CS
VIH
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
RAS CAS
WE BS
Address
valid
code R: b
C: b
C: b'
L
l RCD = 3 CAS latency = 3 Burst length = 4 = VIH or VIL
Pr
14
15
16
17
18
19
20
Read cycle RAS-CAS delay = 3 CAS latency = 3 Burst length = 4 = VIH or VIL
od
b'+1 b" b"+1 b"+2 b"+3
b"+1 b"+2 b"+3
Bank 3 Precharge
t uc
Write cycle RAS-CAS delay = 3 CAS latency = 3 Burst length = 4 = VIH or VIL
Bank 3 Precharge
53
;;; ; ;; ; ;I ;;
HM52Y25165B/ HM52Y25405B-B6
Read/Single Write Cycle
0
;;; ;; ; ; ; ;
CLK CS CKE RAS CAS BS
VIH
EO
WE Address DQM, DQMU/DQML DQ (input) R:a DQ (output)
Bank 0 Active
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
C:a
R:b
C:a' C:a a
CKE
CS
RAS CAS BS
WE
Address DQM, DQMU/DQML DQ (input)
DQ (output)
L
Bank 0 Read
a
a+1 a+2 a+3
a
a+1 a+2 a+3
Bank 0 Precharge
Bank 3 Active
Bank 0 Bank 0 Write Read
Bank 3 Precharge
VIH
Pr
C:a R:b a a a+1 a+3
Bank 0 Read Bank 3 Active
R:a
C:a
C:b C:c b c
od
Bank 0 Write Bank 0 Bank 0 Write Write
Bank 0 Active
Bank 0 Precharge
Read/Single write RAS-CAS delay = 3 CAS latency = 3 Burst length = 4 = V H or VIL
t uc
Preliminary Data Sheet E0146H10 54
;; ; ; ;;; ;
HM52Y25165B/ HM52Y25405B-B6
Read/Burst Write Cycle
0
; ;; ; ;
EO
CLK CS CKE RAS CAS BS WE Address DQM, DQMU/DQML DQ (input) R:a DQ (output)
Bank 0 Active
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
C:a
R:b
C:a' a
L
Bank 0 Read
a+1 a+2 a+3
a
a+1 a+2 a+3
Clock suspend
Bank 3 Active
Bank 0 Write
Bank 0 Precharge
Bank 3 Precharge
CKE CS
VIH
RAS CAS BS
Pr
C:a R:b a a+1 a+3
Bank 0 Read Bank 3 Active
WE
Address DQM, DQMU/DQML DQ (input)
R:a
C:a a
a+1 a+2 a+3
DQ (output)
od
Bank 0 Write
Bank 0 Active
Bank 0 Precharge
Read/Burst write RAS-CAS delay = 3 CAS latency = 3 Burst length = 4 = VIH or VIL
t uc
55
Preliminary Data Sheet E0146H10
;;; ; ;;;; ;;; ;;; ;; ;
HM52Y25165B/ HM52Y25405B-B6
Auto Refresh Cycle
0
;;;; ; ;;; ; ;;; ;; ;; ;;;;;;;; ; ;;;; ; ;; ;; ;;;; ;;; ; ; ; ;;; ;; ;; ;
EO
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20
CLK
CKE CS
VIH
RAS
CAS
WE BS
Address DQM, DQMU/DQML
A10=1
R:a
C:a
L
t RP
Precharge If needed Auto Refresh
A10=1
DQ (input)
DQ (output)
High-Z
a
a+1
t RC
tRC
Auto Refresh
Active Bank 0
Read Bank 0
Refresh cycle and Read cycle RAS-CAS delay = 2 CAS latency = 2 Burst length = 4 = VIH or VIL
Pr
l SREX CKE Low
Self Refresh Cycle
CLK
CKE CS
od
High-Z
RAS CAS
WE BS
Address
DQM, DQMU/DQML
t uc
tRC
Auto Next clock refresh enable
DQ (input)
DQ (output)
tRP
tRC
Precharge command If needed
Self refresh entry command
Self refresh exit ignore command or No operation
Next clock enable
Self refresh entry command
Self refresh cycle RAS-CAS delay = 3 CAS latency = 3 Burst length = 4 = VIH or VIL
Preliminary Data Sheet E0146H10
56
;;;; ;;; ;;
HM52Y25165B/ HM52Y25405B-B6
Clock Suspend Mode
t CES
t CEH
t CES
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
CLK CS
CKE RAS CAS BS
WE
Address DQM, DQMU/DQML DQ (output) DQ (input)
R:a
C:a
R:b
C:b
a
a+1 a+2
a+3
b
b+1 b+2 b+3
High-Z
Bank0 Active clock Active suspend start
Active clock Bank0 suspend end Read
Bank3 Active
Read suspend start
Read suspend end
Bank3 Read
Bank0 Precharge
Earliest Bank3 Precharge
CKE CS
RAS CAS BS
WE
Address DQM, DQMU/DQML DQ (output) DQ (input)
R:a
C:a R:b
C:b
High-Z
a
a+1 a+2
a+3 b
b+1 b+2 b+3
Bank0 Active
Active clock suspend start
Active clock Bank0 Bank3 supend end Write Active
Write suspend start
Write suspend end
Bank3 Bank0 Write Precharge
Earliest Bank3 Precharge
;
18 19 20
;;;;; ; ;;;; ; ; ;;; ;; ; ;;; ;;;;
EO
Read cycle RAS-CAS delay = 2 CAS latency = 2 Burst length = 4 = VIH or VIL
L
Write cycle RAS-CAS delay = 2 CAS latency = 2 Burst length = 4 = VIH or VIL
Pr
Preliminary Data Sheet E0146H10
od
t uc
57
;; ;; ;; ; ; ;
HM52Y25165B/ HM52Y25405B-B6
Power Down Mode
;; ;; ;;; ; ;;; ;; ;; ; ;; ;
0 1 2 3 4 5 6 7 8 9 10 48 49 50 51 52 53 54 55
;;; ; ;;; ;;; ;; ;; ;;; ; ; ;; ;; ; ;;
CKE CS
CKE Low
EO
CLK RAS CAS WE BS Address DQM, DQMU/DQML DQ (input) DQ (output)
Initialization Sequence
L
A10=1
R: a
Precharge command If needed
Pr
tRP
Power down entry
t RC
Auto Refresh Auto Refresh
High-Z
Power down mode exit Active Bank 0
Power down cycle RAS-CAS delay = 3 CAS latency = 3 Burst length = 4 = VIH or VIL
od
High-Z
CLK
CKE CS
VIH
t uc
code Valid
RAS CAS
WE
Address
valid
DQM, DQMU/DQML DQ
VIH
t RP
tRC
t RSA
All banks Precharge
Mode register Set
Bank active If needed
Preliminary Data Sheet E0146H10
58
HM52Y25165B/ HM52Y25405B-B6
Package Dimensions
1
0.80
27
*0.30 +0.10 -0.05 0.28 0.05
0.13 M
10.16
0.13 0.05
*0.145 0.05 0.125 0.04
1.20 Max
0.10
0.50 0.10
*Dimension including the plating thickness Base material dimension
Hitachi Code JEDEC EIAJ Mass (reference value)
TTP-54D -- -- 0.53 g
Preliminary Data Sheet E0146H10 59
0.68
EO
54
HM52Y25165BTT HM52Y25405BTT Series (TTP-54D)
As of January, 2001
22.22 22.72 Max 28
Unit: mm
L
0.91 Max
Pr
11.76 0.20 0 - 5
0.80
od
t uc
HM52Y25165B/ HM52Y25405B-B6
Cautions
EO
60
1. Elpida Memory, Inc. neither warrants nor grants licenses of any rights of Elpida Memory, Inc.'s or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Elpida Memory, Inc. bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Elpida Memory, Inc. makes every attempt to ensure that its products are of high quality and reliability. However, contact Elpida Memory, Inc. before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Elpida Memory, Inc. particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Elpida Memory, Inc. bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-safes, so that the equipment incorporating Elpida Memory, Inc. product does not cause bodily injury, fire or other consequential damage due to operation of the Elpida Memory, Inc. product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Elpida Memory, Inc.. 7. Contact Elpida Memory, Inc. for any questions regarding this document or Elpida Memory, Inc. semiconductor products.
L
Pr
Preliminary Data Sheet E0146H10
od
t uc

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