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 INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
BU4523AF
DESCRIPTION *Collector-Emitter Sustaining Voltage: VCEO(SUS)= 800V (Min) *High Switching Speed APPLICATIONS *Designed for use in horizontal deflection circuits of color TV receivers and PC monitors. ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL VCES VCEO VEBO IC ICM IB
B
PARAMETER Collector- Emitter Voltage(VBE= 0) Collector-Emitter Voltage Emitter-Base Voltage
VALUE 1500 800 7.5 11
UNIT V V
Collector Current- Continuous Collector Current-Peak
Base Current- Continuous Base Current-Peak
w
ww
scs .i
V A 29 7 10 45 150 -55~150 A A A W
.cn mi e
IBM PC TJ Tstg
Collector Power Dissipation @ TC=25 Junction Temperature Storage Temperature Range
THERMAL CHARACTERISTICS
SYMBOL PARAMETER Thermal Resistance,Junction to Case MAX 2.8 UNIT /W
Rth j-c
isc Websitewww.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN
BU4523AF
TYP.
MAX
UNIT
VCEO(SUS)
Collector-Emitter Sustaining Voltage
IC= 100mA; IB= 0, L= 25mH
800
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
7.5
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 8A; IB= 2A
B
3.0
V
VBE(sat)
Base-Emitter Saturation Voltage
IC= 8A; IB= 2A
B
1.1 1.0 2.0 0.1
V
ICES
Collector Cutoff Current
VCE= 1500V; VBE= 0 VCE= 1500V; VBE= 0; TC=125 VEB= 6V; IC= 0
mA
IEBO
Emitter Cutoff Current
hFE-1
DC Current Gain
hFE-2
DC Current Gain
Switching times (16kHz line deflection circuit) Storage Time Fall Time
tstg tf
w w
scs .i w
IC= 1A; VCE= 5V
IC= 8A; VCE= 5V
.cn mi e
4.2
mA
14
7.3
5.5 IC= 8A, IB1= 1.6A; IB2= -4A 0.4
s s
isc Websitewww.iscsemi.cn
2


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