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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3255 DESCRIPTION *With TO-220 package *Complement to type 2SA1291 *Low collector saturation voltage *High speed switching time APPLICATIONS *High current switching applications *Power amplifications *Invertrers ,converters PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Ta=25) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 80 60 5 10 12 40 150 -55~150 UNIT V V V A A W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat ICBO IEBO hFE fT PARAMETER Collector -emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=1mA ,IB= IC=1mA ,IE=0 IE=1mA ,IC=0 IC=5A; IB=0.25A VCB=40V; IE=0 VEB=4V; IC=0 IC=1A ; VCE=2V IC=1A ; VCE=5V 70 MIN 60 80 5 2SC3255 TYP. MAX UNIT V V V 0.4 100 100 280 100 V A A MHz Switching times ton ts tf Turn-on time Storage time Fall time IC=5.0A IB1=- IB2=0.25A RL=6.67;VCC20V 0.1 0.5 0.1 s s s hFE Classifications Q 70-140 R 100-200 S 140-280 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3255 Fig.2 Outline dimensions(unindicated tolerance:0.10 mm) 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3255 4 |
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