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| PH1819-4N Wireless Bipolar Power Transistor 4W, 1.78-1.90 GHz Features * * * * * * * * NPN silicon microwave power transistor Designed for linear amplifier applications Class AB: -34 dBc typ. 3rd IMD at 4 W PEP Class A: +44 dBm typ. 3rd order intercept point Common emitter configuration Internal input impedance matching Diffused emitter ballasting Gold metallization system M/A-COM Products Released - Rev. 07.07 Outline Drawing ABSOLUTE MAXIMUM RATING AT 25C Parameter Symbol Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Thermal Resistance VCBO VCES VEBO IC PD TJ TSTG JC 60 60 3.0 0.7 19.5 200 -55 to + 150 Units V V V A W C C C/W 7.5 ELECTRICAL SPECIFICATIONS AT 25C Parameter Symbol Collector-Emitter Breakdown Voltage Collector-Emitter Leakage Current Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage DC Forward Current Gain Power Gain Collector Efficiency Input Return Loss Load Mismatch Tolerance 3rd Order IMD BVCES ICES BVCEO BVEBO hFE GP C Min 60 20 3.0 15 10 25 10 - Max 2.0 120 10:1 -30 Units V mA V V dB % dB dBc IC = 5mA VCE = 24V IC = 2.5mA IB = 5mA VCE = 5V, IC = 0.1A Test Conditions VCC = 26V, ICQ = 20 mA, Pout = 4 W, F =1850 GHz, F=100kHz VCC = 26V, ICQ = 20 mA, Pout = 4 W, F =1850 GHz, F=100kHz VCC = 26V, ICQ = 20 mA, Pout = 4 W, F =1850 GHz, F=100kHz VCC = 26V, ICQ = 20 mA, Pout = 4 W, F =1850 GHz, F=100kHz VCC = 26V, ICQ = 20 mA, Pout = 4 W, F =1850 GHz, F=100kHz RL VSWR IMD3 TYPICAL OPTIMUM DEVICE IMPEDANCES F (GHz) 1780 1850 1900 ZIN () 3.5+j9.3 3.1+j9.2 3.3+j8.9 ZLOAD () 3.5+j5.6 4.5+j5.2 4.8+j5.5 INPUT NETWORK ZLOAD OUTPUT NETWORK ZIN 1 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions * North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. PH1819-4N Wireless Bipolar Power Transistor 4W, 1.78-1.90 GHz TEST FIXTURE DIMENSIONS M/A-COM Products Released - Rev. 07.07 TEST FIXTURE ASSEMBLY 2 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions * North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. PH1819-4N Wireless Bipolar Power Transistor 4W, 1.78-1.90 GHz Typical Broadband Performance Curves GAIN-EFFICIENCY VS FREQUENCY Pout=4.0 W VCC=26 V ICQ=20 mA OUTPUT POWER VS COLLECTOR VOLTAGE ICC=20 mA F1=1850.0 MHz F2=1850.1 MHz M/A-COM Products Released - Rev. 07.07 14 13 GP(dB) 12 100 75 POUT (W) 50 Eff (%) 8 6 4 2 0 Gain PIN=0.4 mA PIN=0.2mA PIN=0.01mA 11 10 9 1780 Efficiency 25 0 1900 1850 FREQUENCY (MHz) 12 14 16 18 20 22 24 26 COLLECTOR VOLTAGE (V) Gain VS POUT F1= 1850.0 MHz F2= 1850.1 MHz 16 ICO =300mA, 22.0V -15 IMD VS POUT VCC = 26 V F1 = 1850.0 MHz F2= 1850.1 MHz Class AB 1.8 1.5 14 IMD (dBc) ICO=50mA, 26.0V -30 GP (dB) 3rd 5th 1.2 IC (A) 0.9 12 10 8 23 27 ICO=20mA, 26.0V -45 7th IC 0.6 0.3 0 39 31 POUT (dBm) 35 39 -60 23 27 31 POUT (PEP) in dBm 35 VCC = 26 V ICO= 20 mA F1 = 1850.0 MHz F2= 1850.1 MHz IMD VS POUT Class AB VCC = 22 V ICO= 300 mA F1 = 1850.0 MHz F2= 1850.1 MHz IMD VS POUT Class A -15 1.8 1.5 -15 0.9 -30 GP (dB) 3rd 1.2 GP (dB) 0.9 5th 7th IC -30 IC (A) 3rd 0.6 IC (A) 0.3 5th 7th -45 0.6 0.3 0 35 39 -45 IC -60 23 27 POUT 31 (PEP) in dBm -60 23 27 31 POUT (PEP) in dBm 35 0 39 3 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions * North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. |
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