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| SMD Type NPN Silicon Transistor CZT5551 SOT-223 6.50 +0.2 -0.2 Transistors Unit: mm +0.2 3.50-0.2 0.1max +0.05 0.90-0.05 Features +0.1 3.00-0.1 +0.2 0.90-0.2 +0.3 7.00-0.3 4 1 Base 1 2 2.9 4.6 3 +0.1 0.70-0.1 2 Collector 3 Emitter 4 Collector Absolute Maximum Ratings Ta = 25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance Symbol VCBO VCEO VEBO IC PD TJ,Tstg EJA Rating 180 160 6 600 2 -65 to 150 62.5 /W Unit V V V mA W Electrical Characteristics Ta = 25 Symbol ICBO ICBO IEBO BVCBO BVCEO BVEBO VCE(SAT) VCE(SAT) VBE(SAT) VBE(SAT) VCB=120V VCB=120V, TA=100 VEB=4.0V IC=100iA IC=1.0mA IE=10iA IC=10mA, IB=1.0mA IC=50mA, IB=5.0mA IC=10mA, IB=1.0mA IC=50mA, IB=5.0mA VCE=5.0V, IC=1.0mA hFE VCE=5.0V, IC=10mA VCE=5.0V, IC=50mA fT Cob Cib hfe NF VCE=10V, IC=10mA, f=100MHz VCB=10V, IE=0, f=1.0MHz VEB=0.5V, IC=0, f=1.0MHz VCE=10V, IC=1.0mA, f=1.0kHz VCE=5.0V, IC=200iA, RS=10 U,f=10Hz to 15.7kHz 50 80 80 30 100 300 6.0 20 200 8.0 dB MHz pF pF 250 180 160 6.0 0.15 0.20 1.00 1.00 Testconditons Min Max 50 50 50 Unit nA mA nA V V V V V V V +0.15 1.65-0.15 www.kexin.com.cn 1 |
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