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| SVD5N60AT/SVD5N60AF 5A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD5N60AT/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-RinTM structure DMOS technology. The improved planar stripe cell and the improved guarding ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers. FEATURES 5A,600V,RDS(on) typ =2.0@VGS=10V Low gate charge Low Crss Fast switching Improved dv/dt capability ORDERING SPECIFICATIONS Part No. SVD5N60AT SVD5N60AF Package TO-220-3L TO-220F-3L Marking SVD5N60AT SVD5N60AF Shipping 50Unit/Tube 50Unit/Tube ABSOLUTE MAXIMUM RATINGS (Tc=25C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Power Dissipation(TC=25C) -Derate above 25C Single Pulsed Avalanche Energy (Note 1) Repetitive Avalanche Energy (Note 2) Operation Junction Temperature Storage Temperature Symbol VDS VGS ID PD EAS EAR TJ Tstg -55 -55 100 0.8 330 7.3 +150 +150 SVD5N60AT 600 30 5.0 33 0.26 SVD5N60AF Unit V V A W W/C mJ mJ C C HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http://www.silan.com.cn REV:1.0 2009.07.09 Page 1 of 7 SVD5N60AT/SVD5N60AF THERMAL CHARACTERISTICS Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol R JC R JA SVD5N60AT 1.25 62.5 SVD5N60AF 3.79 62.5 Unit C/W C/W ELECTRICAL CHARACTERISTICS (Tc=25C unless otherwise noted) Parameter Drain -Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current Gate Threshold Voltage Static Drain- Source On State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Symbol BVDSS IDSS IGSS VGS(th) RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd (Note 3,4) VDS=480V,ID=4.4A, VGS=10V (Note 3,4) VDD=300V,ID=4.4A, RG=25 Test conditions VGS=0V, ID=250A VDS=600V, VGS=0V VGS=30V, VDS=0V VGS= VDS, ID=250A VGS=10V, ID=2A VDS=25V,VGS=0V, f=1.0MHZ Min. 600 --2.0 -----------Typ. ----2.0 672 66 4.7 27 19 160 22 19.8 4 7.2 Max. -10 100 4.0 2.4 -----ns -----nC pF Unit V A nA V SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Parameter Continuous Source Current Pulsed Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Notes: 1. 2. 3. 4. L=30mH,IAS=4.4A,VDD=85V,RG=25,starting TJ=25C; Repetitive Rating: Pulse width limited by maximum junction temperature; Pulse Test: Pulse width 300 s,Duty cycle 2%; Essentially independent of operating temperature. Symbol IS ISM VSD Trr Qrr Test conditions Integral Reverse P-N Junction Diode in the MOSFET IS=5.0A,VGS=0V IS=5.0A,VGS=0V, dIF/dt=100A/s (Note 3) Min. -----Typ. ---300 2.2 Max. 5.0 16 1.4 --A V ns C Unit HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http://www.silan.com.cn REV:1.0 2009.07.09 Page 2 of 7 SVD5N60AT/SVD5N60AF NOMENCLATURE TYPICAL CHARACTERISTICS Figure 1. On-Region Characteristics 100 10.0 Va r i ab l e VGS=4 . 0V VGS=4 . 5V VGS=5 . 0V VGS=5 . 5V VGS=6 . 0V VGS=6 . 5V VGS=7 . 0V Figure 2. Transfer Characteristics T=-55 T=25 10 T=150 1.0 VGS=7 . 5V VGS=8 . 0V VGS=10V VGS=15V 1 No t es : 1 . 250 s Pu l se Tes t 2 . TC = 25 Notes : 1. VDS = 50V 2. 250 s Pulse Test 0.1 0 1 2 3 4 5 6 7 8 9 10 0.1 0.1 1.0 10.0 VDS Drain-Source Voltage [V] VGS Gate-Source Voltage [V] Figure 3. On-Resitance Variation vs. Drain Current and Gate Voltage 2.6 2.4 2.2 2 1.8 1.6 1.4 1.2 1 -2 0 2 4 6 8 10 Note : TJ = 25 0.1 0.2 1 10 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature T=25 T=150 VGS= 10.0V VGS= 20.0V Notes : 1. VGS = 0V 2. 250 s Pulse Test 0.4 0.6 0.8 1 1.2 1.4 ID Drain Current [A] VSD Source-Drain Voltage [V] HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http://www.silan.com.cn REV:1.0 2009.07.09 Page 3 of 7 SVD5N60AT/SVD5N60AF TYPICAL CHARACTERISTICS (continued) HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http://www.silan.com.cn REV:1.0 2009.07.09 Page 4 of 7 SVD5N60AT/SVD5N60AF TYPICAL TEST CIRCUIT Gate Charge Test Circuit & Waveform Same Type as DUT 50 12V 200nF 300nF VGS VDS 10V Qg Qgs Qgd VGS DUT Charge 3mA Resistive Switching Test Circuit & Waveform VDS VGS RG RL VDD VDS 90% 10V DUT VGS 10% td(on) tr ton td(off) tf toff Unclamped Inductive Switching Test Circuit & Waveform L EAS = VDS ID RG 10V tp DUT BVDSS 1 2 2 LIAS BVDSS - VDD BVDSS IAS VDD ID(t) VDD tp VDS(t) Time HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http://www.silan.com.cn REV:1.0 2009.07.09 Page 5 of 7 SVD5N60AT/SVD5N60AF PACKAGE OUTLINE TO-220-3L(One) UNIT: mm TO-220-3L Two UNIT: mm 15.1~15.9 HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http://www.silan.com.cn 13.10.5 3.95MAX 6.10~6.80 REV:1.0 2009.07.09 Page 6 of 7 SVD5N60AT/SVD5N60AF PACKAGE OUTLINE (continued) TO-220F-3L(One) UNIT: mm 12.40.4 TO-220F-3L(Two) 12.6~13.8 L 6.700.20 A UNIT: mm HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http://www.silan.com.cn REV:1.0 2009.07.09 Page 7 of 7 |
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