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Data Sheet HIGH VOLTAGE POWER SCHOTTKY RECTIFIER General Description
High voltage dual schottky rectifier suited for switch mode power supplies and other power converters. This device is intended for use in medium voltage operation, and particularly, in high frequency circuits where low switching losses and low noise are required. The MBR30100C is available in standard TO-220-3, TO-220-3(2) and TO-220F-3 packages.
MBR30100C
Main Product Characteristics
IF(AV) VRRM TJ VF(max) 2*15A 100V 150C 0.75V
Mechanical Characteristics Features
* * * * *
High Surge Capacity 150C Operating Junction Temperature 30A Total (15 A Per Diode Leg) Guard-Ring foe Stress Protection Pb- Free Packages are available
* * *
* * *
Case: Epoxy, Molded Epoxy Meets UL 94 V-0@ 0.125 in Weight (Approximately): 1.9 Grams (TO-220-3, TO-220-3(2) TO-220F-3) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead Temperature for Soldering Purposes: 260C Max. for 10 Seconds
and
Applications
* * * Power Supply - Output Rectification Power Management Instrumentation
TO-220F-3
TO-220-3
TO-220-3 (2)
Figure 1. Package Type of MBR30100C Apr. 2009 Rev. 1.1 1 BCD Semiconductor Manufacturing Limited
Data Sheet HIGH VOLTAGE POWER SCHOTTKY RECTIFIER Pin Configuration
T Package (TO-220-3) (TO-220-3(2))
MBR30100C
3 2 1
A2 K A1
TF Package (TO-220F-3)
Figure 2. Pin Configuration of MBR30100C (Top View)
Figure 3. Internal Structure of MBR30100C
Apr. 2009 Rev. 1.1 2
BCD Semiconductor Manufacturing Limited
Data Sheet HIGH VOLTAGE POWER SCHOTTKY RECTIFIER Ordering Information
MBR30100C -
MBR30100C
Circuit Type Package T: TO-220-3/TO-220-3(2) TF: TO-220F-3
E1: Lead Free G1: Green Blank: Tube
Package
TO-220-3/ TO-220-3(2) TO-220F-3
Part Number Lead Free
MBR30100CTE1 MBR30100CTF -E1
Marking ID Lead Free
MBR30100CTE1 MBR30100CTF -E1
Green
MBR30100CTG1 MBR30100CTF -G1
Green
MBR30100CTG1 MBR30100CTF G1
Packing Type
Tube Tube
BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant. Products with "G1" suffix are available in green packages.
Absolute Maximum Ratings ( Per Diode Leg) (Note 1)
Parameter
Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (Rated VR) TC = 126C Peak Repetitive Forward Current (Rated VR, Square Wave, 20 kHz) TC = 126C Non repetitive Peak Surge Current (Surge applied at rated load conditions half wave, single phase, 60Hz) Operating Junction Temperature RangeNote 2 Storage Temperature Range Voltage Rate of Change (Rated VR) ESD Ratings: Machine Model = C Human Body Model =3B
Symbol
VRRM VRWM VR IF(AV) IFRM IFSM TJ TSTG dv/dt
Value
100 15 30 200 150 -55 to 150 10000 > 400 > 8000
Unit
V A A A
C
C V/s V
Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods may affect device reliability. Note 2: The heat generated must be less than the thermal conductivity from Junction-to-Ambient: dPD/dTJ < 1/JA.
Apr. 2009 Rev. 1.1 3 BCD Semiconductor Manufacturing Limited
Data Sheet HIGH VOLTAGE POWER SCHOTTKY RECTIFIER Recommended Operating Conditions
Parameter Symbol
JC Maximum Thermal Resistance JA Junction to Ambient
MBR30100C
Condition
Junction to Case
Value
TO-220-3/ TO-220-3(2) TO-220F-3 TO-220-3/ TO-220-3(2) TO-220F-3 2.5 4.5 60 60
Unit
C/W
Electrical Characteristics
Parameter
Maximum Instantaneous Forward Voltage Drop (Note 3)
Symbol
Conditions
IF=15A, TC=25C IF=15A, TC=125C IF=30 A, TC=25C IF=30A, TC=125C
Value
0.85 0.75 0.95 0.85 6.0
Units
VF
V
Maximum Instantaneous Reverse Current (Note 3)
IR
Rated DC TC=125C Rated DC TC=25C
Voltage, Voltage,
mA 0.1
Note 3: Pulse Test: Pulse Width = 300s, Duty Cycle 2.0%.
Apr. 2009 Rev. 1.1 4
BCD Semiconductor Manufacturing Limited
Data Sheet HIGH VOLTAGE POWER SCHOTTKY RECTIFIER Typical Performance Characteristics MBR30100C
100
10000
TJ=150C
Instantaneous Forward Current (A)
1000
10
Reverse Current (A)
TJ=150C
1
100
TJ=125C
TJ=125C
10
1
0.1
TJ=25C
0.01 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
0.1
TJ=25C
0 20 40 60 80 100
0.01
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Figure 4. Typical Forward Voltage Per Diode
Figure 5.
Typical Reverse Current Per Diode
30 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 100 105 110 115 120 125 130 135 140 145 150 155
Average Forward Current (A)
Case Temperature (C)
Figure 6. Average Forward Current vs. Case Temperature (Square, Per Diode)
Apr. 2009 Rev. 1.1 5
BCD Semiconductor Manufacturing Limited
Data Sheet HIGH VOLTAGE POWER SCHOTTKY RECTIFIER Mechanical Dimensions TO-220-3
9.660(0.380) 10.660(0.420) 3.560(0.140) 4.060(0.160)
2.580(0.102) 3.380(0.133)
MBR30100C
Unit: mm(inch)
0.550(0.022) 1.350(0.053)
0.200(0.008)
7
1.500(0.059)
3.560(0.140) 4.820(0.190) 2.080(0.082) 2.880(0.113)
3
7
1.160(0.046) 1.760(0.069)
0.381(0.015)
60 0.813(0.032)
8.763(0.345)
60
0.381(0.015) 2.540(0.100) 2.540(0.100)
0.356(0.014) 0.406(0.016)
Apr. 2009 Rev. 1.1 6
BCD Semiconductor Manufacturing Limited
Data Sheet HIGH VOLTAGE POWER SCHOTTKY RECTIFIER Mechanical Dimensions TO-220-3(2) Unit: mm(inch) MBR30100C
9.800(0.386) 10.200(0.402) 1.700(0.067)
3.560(0.140)
3.640(0.143)
0.600(0.024)
1.300(0.051)
1.300(0.051)
3
4.500(0.177) 2.400(0.094)
3
3
1.270(0.050)
0.700(0.028) 0.900(0.035)
2.540(0.100)
2.540(0.100)
0.400(0.016) 0.600(0.024)
Apr. 2009 Rev. 1.1 7
BCD Semiconductor Manufacturing Limited
Data Sheet HIGH VOLTAGE POWER SCHOTTKY RECTIFIER Mechanical Dimensions (Continued) TO-220F-3
9.700(0.382) 10.300(0.406) 3.000(0.119) 3.550(0.140) 6.900(0.272) 7.100(0.280)
MBR30100C
Unit: mm(inch)
3.000(0.119) 3.400(0.134)
2.350(0.093) 2.900(0.114)
3.370(0.133) 3.900(0.154) 14.700(0.579) 16.000(0.630)
4.300(0.169) 4.900(0.075)
2.790(0.110) 4.500(0.177) 12.500(0.492) 13.500(0.531) 0.550(0.022) 0.900(0.035) 2.540(0.100)
1.000(0.039) 1.400(0.055) 1.100(0.043) 1.500(0.059)
2.540(0.100)
0.450(0.018) 0.600(0.024)
Apr. 2009 Rev. 1.1 8
BCD Semiconductor Manufacturing Limited
BCD Semiconductor Manufacturing Limited
http://www.bcdsemi.com
IMPORTANT NOTICE IMPORTANT NOTICE BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifiBCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifications herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any cations herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or other rights nor the rights of others. other rights nor the rights of others.
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