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CHENMKO ENTERPRISE CO.,LTD
SMALL FLAT NPN Epitaxial Transistor
VOLTAGE 30 Volts
APPLICATION
* Power driver and Dc to DC convertor .
2SD882PT
CURRENT 3 Ampere
FEATURE
* Small flat package. (SC-62/SOT-89) * Low saturation voltage VCE(sat)=0.5V(max.)(IC=2A) * High speed switching time: tstg= 1.0uSec (typ.) * PC= 1.5 W (mounted on ceramic substrate). * High saturation current capability.
4.6MAX. 1.7MAX.
SC-62/SOT-89
1.6MAX. 0.4+0.05
2.5+0.1 +0.08 0.45-0.05 +0.08 0.40-0.05 1.50+0.1 +0.08 0.40-0.05 1.50+0.1
* NPN Switching Transistor
MARKING
* hFE Classification Q: Q82 P: P82 E: 882
1 1 Base
2
3
CIRCUIT
2 Collector ( Heat Sink ) 3 Emitter
0.8MIN.
4.6MAX.
CONSTRUCTION
1 B
2 C
3 E
Dimensions in millimeters
SC-62/SOT-89
MAXIMUM RATINGES ( At TA = 25oC unless otherwise noted ) RATINGS Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current DC Peak Collector Current Peak Base Current Total Power Dissipation Storage Temperature Junction Temperature Operating Ambient Temperature TA 25OC; Note 1 CONDITION Open Emitter Open Base Open Collector SYMBOL VCBO VCEO VEBO IC ICM IBM PTOT TSTG TJ TAMB MIN. -55 -55 MAX. 40 30 5 3 3 0.5 1500 +150 +150 +150 UNITS Volts Volts Volts Amps Amps Amps mW
o
C C C
o
o
Note
1. Transistor mounted on ceramic substrate 50mmX50mmx0.8t. 2. Measured at Pulse Width 300 us, Duty Cycle 2%. 2003-8
RATING CHARACTERISTIC CURVES ( 2SD882PT )
CHARACTERISTICS ( At TA = 25oC unless otherwise noted ) PARAMETERS Collector Cut-off Current Emitter Cut-off Current CONDITION IE=0; VCB=30V IC=0; VEB=3V VCE=2V; Note 1 IC=0.02A IC=1.0A; Note 2 IC=2A; IB=0.2A IC=2A; IB=-0.2A IE=ie=0; VCB=10V; f=1MHz IC=0.02A; VCE=20V; f=100MHz SYMBOL ICBO IEBO MIN. TYPE MAX. 1.0 1.0 UNITS uA uA
DC Current Gain
hFE
30 100 -
160 0.3 1.0 55 100
500 0.5 2.0 Volts Volts pF MHz
Collector-Emitter Saturation Voltage Base-Emitter Saturatio Voltage Collector Capacitance Transition Frequency
VCEsat VBEsat CC fT
SWITCHING TIMES ( Between 10% and 90% levels ) PARAMETERS Turn-on Time Storage Time Fall Time
IB1 IB2
INPUT
CONDITION
OUTPUT
SYMBOL ton ts tf
MIN. -
TYPE 0.1 1.0 0.1
MAX. -
UNITS uSec uSec uSec
IB2
30 ohmS 30V
20uSec
IB1
IB1=-IB2=0.05A Duty cycle<1%
Note : 1. Pulse test: tp 300uSec; 0.02. 2. hFE(2) Classification Q: 100 to 200, P: 160 to 320, E: 250 to 500.
RATING CHARACTERISTIC CURVES ( 2SD882PT )
Typical Electrical Characteristics
Figure 1. CC - Reverse VCB
3000 3000
Figure 2. Cutoff Frequency - IC
COLLECTOR CAPACITANCE CC (pF)
VCE=5V
1000
1000
100
CUTOFF FREQUENCY (MHz)
100
10
10
1 0.1
1 0.3 1.0 3.0 10 30 100 1 10 100 1000 COLLECTOR-BASE REVERSE BIAS VOLTAGE VCB (V) COLLECTOR CURRENT IC (mA)
Figure 3. hFE - IC
COLLECTOR POWER DISSIPATION PC (W)
1000 500
COMMON EMITTER VCE=2V
Figure 4. PC - TA
1.5 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0
(1)
(1) Mounted on ceramic substrate ( 250mm 2x0.8t ) (2) No heat sink
DC CURRENT GAIN hFE
300
100
(2)
50 30
10 10 30 100 300 1000 3000 COLLECTOR CURRENT IC (mA)
0
20
40
60
80
100
120
140
160
AMBIENT TEMPERATURE TA ( OC)
Figure 5. VCE(sat) - IC
COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V)
1 0.5 0.3 10
Figure 6. VBE(sat) - IC
BASE-EMITTER SATURATION VOLTAGE VBE(sat) (V)
COMMON EMITTER
COMMON EMITTER IC/IB=10
5 3
IC/IB=10
0.1
1
0.05 0.03
0.5 0.3
0.01 10 30 100 300 1000 3000 COLLECTOR CURRENT IC (mA)
0.1 10 30 100 300 1000 3000 COLLECTOR CURRENT IC (mA)
RATING CHARACTERISTIC CURVES ( 2SD882PT )
Typical Electrical Characteristics
Figure 9. Safe Operation Area
30000 10000 5000 3000 1000 500 300 100 50 30 10 0.1 Single nonrepetitive pulse TA=25OC Curve must be derated linearly with increase in temperature Tested without a substrate 0.3 1.0 3.0 10 30 100
COLLECTOR CURRENT IC (mA)
1 mS
100 mS 1S
COLLECTOR-EMITTER VOLTAGE VCE (V)

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