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 SST2604
5.5A, 30V,RDS(ON) 45m[ Elektronische Bauelemente
N-Channel Enhancement Mode Power Mos.FET
RoHS Compliant Product
SOT-26
Description
0.37Ref. 0.20 0.60 Ref. 2.60 3.00
The SST2604 utiltzed advance processing techniques to achieve the lowest possible on-resistance, extermely efficient and cost-effectiveness device.
The SST2604 is universally used for all commercial-industrial applications.
0.25
1.40 1.80 0.30 0.55
0.95 Ref. 2.70 3.10 0~0.1
0 o 10
o
1.20Ref.
Features
* Lower Gate Charge * Fast Switching Characteristic * Small Footprint & Low Profile Package
D
Dimensions in millimeters
D 6
D 5
S 4
Date Code
2604
G
1 D 2 D 3 G
S
Absolute Maximum Ratings
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current,VGS@4.5V Continuous Drain Current,VGS@4.5V Pulsed Drain Current
1,2 3 3
Symbol
VDS VGS ID@TC=25 C ID@TC=70C IDM PD@TC=25 C
o o o
Ratings
30
20 5.5 4.4 20 2 0.016
Unit
V V A A A W
W/ C
o o
Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range
Tj, Tstg
-55~+150
C
Thermal Data
Parameter
Thermal Resistance Junction-case
3
Symbol Max.
Rthj-c
Ratings
62.5
Unit
o
C /W
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 1 of 4
SST2604
Elektronische Bauelemente 5.5A, 30V,RDS(ON) 45m[
N-Channel Enhancement Mode Power Mos.FET
Electrical Characteristics( Tj=25 C Unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Gate Threshold Voltage Gate-Source Leakage Current Drain-Source Leakage Current (Tj=25 C ) Drain-Source Leakage Current(Tj=55 C) Static Drain-Source On-Resistance 2
o o
o
Symbol
BVDSS BVDS/ Tj VGS(th) IGSS IDSS
Min.
30
_
Typ.
_
Max.
_
Unit
V V/ C V nA uA uA
o
Test Condition
VGS=0V, ID=250uA Reference to 25 C, ID=1mA VDS=VGS, ID=250uA VGS=20V VDS=30V,VGS=0 VDS=24V,VGS=0 VGS=10V, ID=4.8A VGS=4.5V, ID=2.4A ID=4.8A VDS=24V VGS= 4.5V
o
0.02
_ _ _ _ _ _
_
1.0
_ _ _ _
3.0
100
1 25 45 65
10
_ _
RDS(ON) Qg Qgs Qgd Td(ON) Tr Td(Off) Tf Ciss Coss Crss Gfs
_ _ _ _ _ _ _ _ _ _ _
m [
Total Gate Charge2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Forward Transconductance
6 2 3 6 8 15 4 440 105 35 7
nC
_
_ _ _
VDD=15V ID=1A nS VGS=10V RG=3.3[ RD=15[
705
_ _
pF
VGS=0V VDS=25V f=1.0MHz
_
_
S
VDS =10V, ID=4.8A
Source-Drain Diode
Parameter
Forward On Voltage 2 Reverse Recovery Time
2
Symbol
VSD Trr
Min.
_ _
Typ.
_
Max.
1.2
_ _
Unit
V nS nC
Test Condition
IS=4.8A, VGS=0V. IS=4.8A , VGS=0V. dl/dt=100A/us
15
7
Reverse Recovery Change
Qrr
_
Notes: 1.Pulse width limited by safe operating area. 2.Pulse widthO 300us, dutycycleO2%. O 3.Surface mounted on 1 in2 copper pad of FR4 board; 156 C/W when mounted on Min. copper pad.
http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 2 of 4
SST2604
5.5A, 30V,RDS(ON) 45m[ Elektronische Bauelemente
N-Channel Enhancement Mode Power Mos.FET
Characteristics Curve
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance v.s. Junction Temperature
Fig 5. Forward Characteristics of http://www.SeCoSGmbH.com/ Reverse Diode
01-Jun-2002 Rev. A
Fig 6. Gate Threshold Voltage v.s. Junction Temperature
Any changing of specification will not be informed individual
Page3 of 4
SST2604
5.5A, 30V,RDS(ON) 45m[ Elektronische Bauelemente
N-Channel Enhancement Mode Power Mos.FET
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 4 of 4


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