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| SMG3314 Elektronische Bauelemente -1.9A, -30V,RDS(ON) 240m[ P-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product A Description The SMG3314 provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. S 2 L SC-59 Dim Min 2.70 1.40 1.00 0.35 1.70 0.00 0.10 0.20 0.85 2.40 Max 3.10 1.60 1.30 0.50 2.10 0.10 0.26 0.60 1.15 2.80 3 Top View B 1 A B C D G D G C J K Features * Ultrahigh-Speed Switching * 4V Drive * Low On-Resistance Gate Source H J K H Drain L S D All Dimension in mm Marking : 3314 G S Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current1,2 Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Tj, Tstg 3 3 Symbol VDS VGS ID@TA=25 C ID@TA=70 C IDM PD@TA=25 C o o o Ratings -30 20 -1.9 -1.5 -10 1.38 0.01 -55~+150 Unit V V A A A W W/ C o o C Thermal Data Parameter Thermal Resistance Junction-ambient 3 Symbol Max. Ratings 90 Unit o Rthj-a C /W http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 1 of 4 SMG3314 Elektronische Bauelemente -1.9A, -30V,RDS(ON) 240m[ P-Channel Enhancement Mode Power Mos.FET o Electrical Characteristics( Tj=25 C Unless otherwise specified) Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Gate Threshold Voltage Gate-Source Leakage Current Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=70 oC) o Symbol BVDSS BVDS/ Tj VGS(th) IGSS IDSS Min. -30 _ Typ. _ Max. _ _ _ 100 Unit V V/ C V nA uA uA o Test Condition VGS=0V, ID=-250uA Reference to 25 C, ID=-1mA VDS=VGS, ID=-250uA VGS=20V VDS=-30V,VGS=0 VDS=-30V,VGS=0 VGS=-10V, ID=- 1.7A o -0. 1 _ _ _ _ _ _ _ _ -1.0 _ _ _ _ -1 -10 240 270 460 500 _ _ _ Static Drain-Source On-Resistance 2 _ RDS(ON) _ _ m[ VGS=-10V, ID=- 0.8A VGS=-4.5V, ID=-1.3A VGS=-4.0V, ID=-0.4A ID=-1.7A VDS=-15V VGS=-10V Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Forward Transconductance Qg Qgs Qgd Td(ON) Tr Td(Off) Tf Ciss Coss Crss Gfs _ _ _ _ _ _ _ _ _ _ 6.2 1.4 0.3 7.6 8.2 17.5 9 230 130.4 40 2 nC _ _ _ _ _ _ _ VDS=-15V ID=- 1 A nS VGS=-10V RG=6 [ RD=15 [ pF VGS=0V VDS=-15V f=1.0MHz _ _ S VDS=-10V , ID=-1.7A Source-Drain Diode Parameter Forward On Voltage 2 Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) 1 Symbol VSD IS ISM Min. _ Typ. _ Max. -1.2 Unit V Test Condition IS=-1.25A, VGS=0V. VD=VG=0V,VS=-1.2V _ _ _ _ -1 -6.4 A A Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse widthO 300us, dutycycleO2%. 3.Surface mounted on 1 inch2 copper pad of FR4 board; 270C/W when mounted on min. copper pad. http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 2 of 4 SMG3314 Elektronische Bauelemente -1.9A, -30V,RDS(ON) 240m[ P-Channel Enhancement Mode Power Mos.FET Characteristics Curve 1.35 http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 3 of 4 SMG3314 Elektronische Bauelemente -1.9A, -30V,RDS(ON) 240m[ P-Channel Enhancement Mode Power Mos.FET http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 4 of 4 |
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